Pick-up device and pick-up method
A pick-up device 10 for picking up a semiconductor chip 100 attached to a front surface of a sheet material 110 is provided with: a stage 12 that includes a material a part or the entirety of which is capable of transmitting a destaticizing electromagnetic wave having an ionization effect and that attracts and holds a rear surface of the sheet material 110 ; a jacking-up pin 26 for jacking up the semiconductor chip 100 from the rear side of the stage 12 ; and a destaticizing mechanism 20 that destaticizes charge generated between the semiconductor chip 100 and the sheet material 110 by irradiating the rear surface of the semiconductor chip 100 with the destaticizing electromagnetic wave that is made to pass through the sheet material 110 from the rear side of the stage 12.
1. A pick-up device for picking up a semiconductor chip attached to a front surface of a sheet material, the pick-up device comprising:
a stage comprising a material a part or all of which is capable of transmitting a destaticizing electromagnetic wave having an ionization effect, and the stage attracting and holding a rear surface of the sheet material;
a jacking-up pin jacking up the semiconductor chip from a rear side of the stage;
a destaticizing mechanism destaticizing charge generated between the semiconductor chip and the sheet material by making the destaticizing electromagnetic wave pass through the sheet material from the rear side of the stage and irradiate a rear surface of the semiconductor chip; and
a suction cylinder covering a periphery of the jacking-up pin and formed with an irradiation hole on a peripheral surface for the destaticizing electromagnetic wave to pass through,
wherein the destaticizing mechanism comprises a light source that irradiates the semiconductor chip with the destaticizing electromagnetic wave via the irradiation hole.
2. The pick-up device according to claim 1 , wherein the destaticizing mechanism emits the destaticizing electromagnetic wave that has photon energy in a range of 3 eV to 15 keV.
3. The pick-up device according to claim 1 , wherein the destaticizing mechanism emits the destaticizing electromagnetic wave that has photon energy in an ultraviolet ray region, and
the stage comprises quartz, calcium fluoride, or magnesium fluoride.
4. The pick-up device according to claim 1 , wherein the destaticizing mechanism emits the destaticizing electromagnetic wave that has photon energy in an X-ray region, and
a part or all of the stage comprises beryllium and diamond.
5. The pick-up device according to claim 1 , wherein the destaticizing mechanism emits the destaticizing electromagnetic wave that has photon energy in an X-ray region, and
a part or all of the stage is made of a metal material or a non-metal material that controls transmissibility to the destaticizing electromagnetic wave by thickness.
6. A pick-up method for picking up a semiconductor chip attached to a front surface of a sheet material, the pick-up method comprising:
a step of attracting and holding the sheet material at a stage, wherein the stage comprises a material that is capable of transmitting a destaticizing electromagnetic wave having an ionization effect;
a step of jacking up the semiconductor chip from a rear side of the stage with a jacking-up pin and peeling off at least a part of the semiconductor chip from the sheet material; and
a step of destaticizing charge generated between the semiconductor chip and the sheet material by making the destaticizing electromagnetic wave pass through the sheet material from the rear side of the stage and irradiate a rear surface of the semiconductor chip in parallel with or immediately after the step of jacking up wherein the destaticizing electromagnetic wave is irradiated to the semiconductor chip via an irradiation hole formed on a peripheral surface of a suction cylinder covering a periphery of the jacking-up pin.