Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor
A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80≤In/(In+Y+Ga)≤0.96 (1), 0.02≤Y/(In+Y+Ga)≤0.10 (2), and 0.02≤Ga/(In+Y+Ga)≤0.10 (3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005≤Al/(In+Y+Ga+Al)≤0.07 (4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.
1. A sintered oxide comprising main constitutional elements comprising In element, Y element, Ga element, Al element, and O element, wherein the sintered oxide comprises a Bixbyite crystalline phase represented by In 2 O 3 and a Y 3 Ga 5 O 12 crystalline phase and a Y 3 Ga 4 AlO 12 crystalline phase.
2. A sintered oxide comprising main constitutional elements comprising In element, Y element, Ga element, Al element, positive tetravalent metal element, and O element, wherein the sintered oxide comprises a Bixbyite crystalline phase represented by In 2 O 3 and a Y 3 Ga 4 AlO 12 crystalline phase.
3. The sintered oxide according to claim 1 , wherein a relative density of the sintered oxide is 95% or more.
4. The sintered oxide according to claim 1 , wherein a bulk resistivity of the sintered oxide is 30 mΩ cm or less.
5. A sputtering target comprising: the sintered oxide according to claim 1 ; and a backing plate.
6. The sintered oxide according to claim 2 , wherein a relative density of the sintered oxide is 95% or more.
7. The sintered oxide according to claim 2 , wherein a bulk resistivity of the sintered oxide is 30 mΩ cm or less.
8. A sputtering target comprising: the sintered oxide according to claim 2 ; and a backing plate.
9. A manufacturing method of an oxide semiconductor thin-film, the method comprising forming the oxide semiconductor thin film via sputtering with a sputtering target comprising the sintered oxide according to claim 1 and a backing plate.
10. The manufacturing method according to claim 9 , wherein the oxide semiconductor thin-film containing: In element, Y element, Ga element and Al element at respective atomic ratios as defined in formulae (1-7) to (1-9) and (1-10) below,
0.80≤In/(In+Y+Ga)≤0.96 (1-7),
0.02≤Y/(In+Y+Ga)≤0.10 (1-8), and
0.02≤Ga/(In+Y+Ga)≤0.15 (1-9);
0.005≤Al/(In+Y+Ga+Al)≤0.07 (1-10),
where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, the Y element, the Ga element, and the Al element in the oxide semiconductor thin-film, respectively.
11. A manufacturing method of an oxide semiconductor thin-film, the method comprising forming the oxide semiconductor thin-film via sputtering with a sputtering target comprising the sintered oxide according to claim 2 and a backing plate.
12. The manufacturing method according to claim 11 , wherein the oxide semiconductor thin-film containing: In element, Y element, Ga element and Al element at respective atomic ratios as defined in formulae (1-7) to (1-9) and (1-10) below,
0.80≤In/(In+Y+Ga)≤0.96 (1-7),
0.02≤Y/(In+Y+Ga)≤0.10 (1-8), and
0.02≤Ga/(In+Y+Ga)≤0.15 (1-9);
0.005≤Al/(In+Y+Ga+Al)≤0.07 (1-10), and
an oxide of a positive tetravalent or more polyvalent metal element X at an atomic ratio defined by a formula (1-12) below,
0.00005≤X/(In+Y+Ga+Al+X)≤0.005 (1-12),
where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, the Y element, the Ga element, and the Al element in the oxide semiconductor thin-film, respectively, X represents the number of atoms of the X element in the oxide semiconductor thin-film.