IP Library Granted Patent US 11,101,139
Granted Patent B2
US 11,101,139 · App. 16/502,482 · Granted Aug 24, 2021

Etched nickel plated substrate and related methods

Inventor: Sadamichi Takakusaki (Ota, JP)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L21/32134H01L21/02194H01L21/02628
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Quick Facts
Patent No.
US 11,101,139
App. No.
16/502,482
Granted
Aug 24, 2021
Kind
B2
Abstract

An etched nickel plated substrate and related methods is disclosed. Specific implementations may include providing a dielectric layer, coupling a layer of copper with a first side of the dielectric layer, plating a first side of the layer of copper with a layer of nickel; forming a patterned layer on the layer of nickel, and spray etching the layer of nickel using an etchant. The method may include holding the etchant on the dielectric layer for a predetermined period of time, and while holding the etchant, etching substantially only the layer of nickel until the layer of nickel may be substantially coextensive with a perimeter of each of a plurality of traces in the layer of copper.

Claims (29)

1. A method of etching nickel on a substrate, comprising:

providing a dielectric layer;

coupling a layer of copper with a first side of the dielectric layer;

plating a first side of the layer of copper with a layer of nickel;

forming a patterned layer on the layer of nickel;

spray etching the layer of nickel using an etchant;

holding the etchant on the dielectric layer for a predetermined period of time; and

while holding the etchant, etching substantially only the layer of nickel until the layer of nickel is substantially coextensive with a perimeter of each of a plurality of traces in the layer of copper.

2. The method of claim 1 , wherein the etchant comprises ferric chloride.

3. The method of claim 1 , wherein the predetermined period of time is within a range of 60 seconds to 90 seconds.

4. The method of claim 1 , wherein the layer of nickel comprises electroless nickel.

5. The method of claim 1 , wherein the patterned layer is formed by screen printing, stenciling, or photolithographic processing.

6. The method of claim 1 , wherein holding the etchant further comprises holding the etchant at a temperature within a range of 43 degrees Celsius to 47 degrees Celsius.

7. The method of claim 1 , wherein spray etching the layer of nickel further comprises spraying the etchant at a pressure within a range of 220 kilopascals to 280 kilopascals.

8. The method of claim 1 , wherein the layer of nickel has a thickness within a range of 1 micrometer to 7 micrometers, and the layer of copper has a thickness within a range of 70 micrometers to 1,000 micrometers.

9. The method of claim 1 , further comprising removing the patterned layer.

10. A method of etching nickel on a substrate, comprising:

providing a dielectric layer;

coupling a layer of copper with a first side of the dielectric layer;

plating a first side of the layer of copper with a layer of nickel;

forming a patterned layer on the layer of nickel;

spray etching the layer of nickel using an etchant;

holding the etchant on the dielectric layer for a predetermined period of time, the predetermined period of time within a range of 60 seconds to 90 seconds; and

while holding the etchant, etching substantially only the layer of nickel until the layer of nickel is substantially coextensive with a perimeter of each of a plurality of traces in the layer of copper.

11. The method of claim 10 , wherein the etchant comprises ferric chloride.

12. The method of claim 10 , wherein the patterned layer is formed by screen printing, stenciling, or photolithographic processing.

13. The method of claim 10 , wherein holding the etchant further comprises holding the etchant at a temperature within a range of 43 degrees Celsius to 47 degrees Celsius.

14. The method of claim 10 , wherein spray etching the layer of nickel further comprises spraying the etchant at a pressure within a range of 220 kilopascals to 280 kilopascals.

15. The method of claim 10 , wherein the layer of nickel has a thickness within a range of 1 micrometer to 7 micrometers, and the layer of copper has a thickness within a range of 70 micrometers to 1,000 micrometers.

Assignments (4)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 051145, FRAME 0062 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064079/0474 →
CORRECTIVE ASSIGNMENT TO CORRECT THE EXCLUSION OF FAIRCHILD SEMICONDUCTOR CORPORATION OF CONVEYING PARTY PREVIOUSLY RECORDED ON REEL 051145 FRAME 0062. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Dec 3, 2019
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 051170/0781 →
SECURITY INTEREST Recorded Nov 26, 2019
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 051145/0062 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 3, 2019
From: TAKAKUSAKI, SADAMICHI
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 049663/0007 →