Method for manufacturing electronic device
An electronic device and a method for manufacturing the same are disclosed. The method for manufacturing the electronic device includes the following steps: providing a substrate; forming a metal layer on the substrate, wherein the metal layer has a first surface; forming a first insulating layer on the first surface of the metal layer; forming a second insulating layer on the first insulating layer; etching the first insulating layer and the second insulating layer to form a contact hole, wherein the contact hole exposes a portion of the first surface; cleaning the portion of the first surface exposed by the contact hole with a solution; and forming a transparent conductive layer on the second insulating layer, wherein the transparent conductive layer electrically connects with the metal layer.
1. A method for manufacturing an electronic device, comprising the following steps:
providing a substrate;
forming a metal layer on the substrate, wherein the metal layer has a first surface;
forming a first insulating layer on the first surface of the metal layer;
forming a second insulating layer on the first insulating layer;
etching the first insulating layer and the second insulating layer to form a contact hole, wherein the contact hole exposes a portion of the first surface;
cleaning the portion of the first surface exposed by the contact hole with a solution, wherein a recess is formed at a boundary between the metal layer and the first insulating layer; and
forming a transparent conductive layer on the second insulating layer, wherein the transparent conductive layer electrically connects with the metal layer;
wherein the recess connects with the contact hole.
2. The method of claim 1 , wherein the step of cleaning the portion of the first surface exposed by the contact hole with the solution includes: removing a residue or an oxide on the portion of the first surface exposed by the contact hole.
3. The method of claim 1 , wherein the second insulating layer includes an organic layer.
4. The method of claim 1 , wherein the metal layer comprises Cu or Cu alloy.
5. The method of claim 1 , wherein the first insulating layer comprises silicon nitride.
6. The method of claim 1 , wherein a refractive index of the second insulating layer is substantially the same as a refractive index of the first insulating layer.
7. The method of claim 1 , wherein a ratio of a length of the recess to a thickness of the transparent conductive layer is in a range from 0.01 to 0.2.
8. The method of claim wherein a length of the recess is in a range from 0.01 nm to 100 nm.
9. The method of claim 1 , wherein a thickness of the transparent conductive layer is in a range from 400 nm to 2000 nm.
10. The method of claim 1 , wherein a depth of the recess is in a range from 20 nm to 100 nm.
11. The method of claim 1 , wherein the step of etching the first insulating layer and the second insulating layer to form the contact hole is performed by a dry etching process.