Semiconductor device and method of manufacturing the same
A semiconductor device includes a first semiconductor chip on which a first circuit is formed and a second semiconductor chip on which two circuits are formed. In the first semiconductor chip, a first inductor on the transmitting side electrically connected with the first circuit and a second inductor on the receiving side electrically connected with the second circuit via the bonding wire are formed. In plan view, the first inductor and the second inductor are disposed so as not to overlap each other, and are arranged along each other.
1. A semiconductor device comprising:
a semiconductor substrate;
a multi-layer wiring structure formed to cover the semiconductor substrate, the multi-layer wiring structure including:
a plurality of wirings; and
a plurality of interlayer insulating films electrically isolating the plurality of wiring, respectively;
a first circuit driven by a first voltage;
a second circuit driven by a second voltage greater than the first voltage;
a first inductor electrically connected with the first circuit, the first inductor being formed in a first interlayer insulating film of the plurality of interlayer insulating films; and
a second inductor electrically connected with the second circuit, the second inductor being formed in a second interlayer insulating film of the plurality of interlayer insulating films, the second interlayer insulating film being different from the first interlayer insulating film,
wherein, in plan view, the first inductor and the second inductor are disposed such that the first inductor and the second inductor do not overlap each other and are arranged along each other.
2. The semiconductor device according to claim 1 , wherein the semiconductor substrate is located below the first inductor and the second inductor, and
wherein the semiconductor device comprising:
a first insulator formed in the semiconductor substrate, wherein the first inductor overlapping the first insulator in plan view; and
a second insulator formed in the semiconductor substrate, wherein the second inductor overlapping the second insulator in plan view.
3. The semiconductor device according to claim 2 , comprising an element isolation insulating film formed in the semiconductor substrate, the element isolation insulating film defining a first element region in which the first circuit is formed,
wherein the first insulator and the second insulator are formed from a surface of the semiconductor substrate to a position deeper than a bottom of the element isolation insulating film.
4. The semiconductor device according to claim 1 ,
wherein the semiconductor substrate is disposed below the first inductor and the second inductor, and
wherein at least one of the first inductor and the second inductor directly contacts a surface of one of the interlayer insulating film among the plurality of interlayer insulating films.
5. The semiconductor device according to claim 4 , wherein both the first inductor and the second inductor are formed such that the first inductor and the second inductor contact the surface of the one of the interlayer insulating film.
6. The semiconductor device according to claim 5 ,
wherein, in plan view, the surface of the one of the interlayer insulating films includes a first portion disposed between the first inductor and the second inductor,
wherein, in plan view, the surface of the one of the interlayer insulating film includes a second portion where each of the first inductor and the second inductor is disposed, and
wherein a surface of the second portion is disposed closer to a surface of the semiconductor substrate than a surface of the first portion.
7. The semiconductor device according to claim 4 , wherein a surface of a third portion located in a region outer side than the second inductor in the interlayer insulating film is disposed closed to a surface of the semiconductor substrate than a surface of a fourth portion where each of the second inductor in the one of the interlayer insulating film.
8. The semiconductor device according to claim 4 , wherein, in the multi-layer wiring structure, the second inductor is formed so as to be in contact with a surface of the one of the interlayer insulating film, and the first inductor is formed so as to be in contact with a surface of another interlayer insulating film located on the semiconductor substrate side of the one of the interlayer insulating film among the plurality of interlayer insulating films.
9. The semiconductor device according to claim 4 , wherein the first inductor and the second inductor have annular shape in plan view.
10. The semiconductor device according to claim 1 ,
wherein a semiconductor substrate is disposed below the first inductor and the second inductor, and
wherein the first inductor and the second inductor extend along an outer periphery of the semiconductor substrate in plan view.