Backside metal patterning die singulation systems and related methods

1. A method of singulating a plurality of die comprised in a substrate, the method comprising:

forming a plurality of die on a first side of a substrate;

forming a seed layer on a second side of the substrate opposite the first side of the substrate;

using a shadow mask, applying a mask layer over the seed layer;

forming a backside metal layer over the seed layer;

removing the mask layer; and

singulating the plurality of die comprised in the substrate through removing substrate material in the die street and through removing seed layer material in the die street.

2. The method of claim 1 , wherein the mask layer comprises a polymer material.

3. The method of claim 1 , wherein the mask layer comprises a photoresist material.

4. The method of claim 1 , wherein the seed layer comprises titanium.

5. The method of claim 1 , wherein the backside metal layer comprises copper.

6. The method of claim 1 , wherein removing substrate material in the die street further comprises plasma etching.

7. The method of claim 1 , wherein removing substrate material in the die street and removing seed layer material in the die street further comprises using one of a laser beam or a saw blade.

8. The method of claim 1 , further comprising thinning the second side of the substrate to a thickness less than 30 micrometers.

9. The method of claim 1 , further comprising aligning the substrate from a backside of the substrate.

10. A method of singulating a plurality of die comprised in a substrate, the method comprising:

forming a plurality of die on a first side of a substrate;

forming a seed layer on a second side of the substrate opposite the first side of the substrate;

using a shadow mask, applying a mask layer over the seed layer;

removing the shadow mask;

forming a backside metal layer over the seed layer;

removing the mask layer;

singulating the plurality of die comprised in the substrate through removing substrate material in the die street and through removing seed layer material in the die street using one of a laser beam or a saw blade.

11. The method of claim 10 , wherein the mask layer comprises a resin material.

12. The method of claim 10 , wherein the mask layer comprises a photoresist material.

13. The method of claim 10 , further comprising remote plasma healing a sidewall of the die street.

14. The method of claim 10 , further comprising thinning the second side of the substrate to a thickness less than 30 micrometers.

15. The method of claim 10 , further comprising aligning the substrate from a backside of the substrate.

16. A method of singulating a plurality of die comprised in a substrate, the method comprising:

forming a plurality of die on a first side of a substrate;

forming a seed layer on a second side of the substrate opposite the first side of the substrate;

using a shadow mask corresponding to die streets of the substrate, forming a mask layer over the die streets of the substrate;

forming a backside metal layer over the seed layer between the mask layer;

removing the mask layer from the die streets;

singulating the plurality of die comprised in the substrate through removing substrate material in the die street and through removing seed layer material in the die street using one of a laser beam or a saw blade.

17. The method of claim 16 , wherein the mask layer comprises a photoresist material.

18. The method of claim 16 , further comprising remote plasma healing a sidewall of the plurality of die.

19. The method of claim 16 , wherein the backside metal layer is 10 micrometers thick.

20. The method of claim 16 , wherein the mask layer comprises a resin.