Method for manufacturing semiconductor device
According a method for manufacturing a semiconductor device of the present invention, a surface protection film having an elastic modulus of 2 GPa or more is formed on a first main surface of a semiconductor wafer where an element structure is formed, the semiconductor wafer is placed on a stage with the first main surface facing the stage, and a second main surface of the semiconductor wafer opposite to the first main surface is ground.
1. A method for manufacturing a semiconductor device, the method comprising:
forming a surface protection film having an elastic modulus of 2 GPa or more on a first main surface of a semiconductor wafer on which an element structure formed, to make an end of the surface protection film wavy such that a distance from an end of the semiconductor wafer to the end of the surface protection film varies with position in a circumferential direction on the semiconductor wafer; and
placing the semiconductor wafer on a stage with the first main surface facing the stage and grinding a second main surface of the semiconductor wafer opposite to the first main surface.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein
the surface protection film is made of polyimide.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein
the forming of the surface protection film is forming the surface protection film to position the end of the surface protection film inside an end of the first main surface of the semiconductor wafer.
4. The method for manufacturing a semiconductor device according to claim 3 , wherein
the forming of the surface protection film is forming the surface protection film to make a minimum value of a distance between the end of the surface protection film and the end of the first main surface of the semiconductor wafer equal to or greater than 0.1 mm.
5. The method for manufacturing a semiconductor device according to claim 3 , wherein
the forming of the surface protection film is forming the surface protection film to make a maximum value of the distance between the end of the surface protection film and the end of the first main surface of the semiconductor wafer equal to or less than 1.3 mm.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein
a thickness of the surface protection film is equal to or greater than a thickness of a pattern made by the element structure formed on the first main surface of the semiconductor wafer.