Electrode structure of light emitting device
A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.
1. A light-emitting device, comprising:
a first semiconductor layer;
an active layer on the first semiconductor layer;
a second semiconductor layer on the active layer; and
an electrode structure on the second semiconductor layer,
wherein the electrode structure comprises a conductive layer on the second semiconductor layer, a bonding layer on the conductive layer, and a first barrier layer between the bonding layer and the conductive layer,
wherein the first barrier layer comprises a material selected from a group consisting of Cr, Pt, Ti, TiW, W, and Zn, and
wherein the conductive layer comprises a first conductive layer and a second conductive layer, and a third barrier layer is between the first conductive layer and the second conductive layer.
2. A light-emitting device according to claim 1 , wherein the electrode structure further comprises an adhesion layer between the second semiconductor layer and the conductive layer.
3. A light-emitting device according to claim 2 , wherein the adhesion layer comprises Cr or Rh.
4. A light-emitting device according to claim 3 , wherein the adhesion layer comprises a thickness between 5 Å and 50 Å.
5. A light-emitting device according to claim 1 , further comprising a mirror layer between the second semiconductor layer and the conductive layer, wherein the mirror layer comprises Al or Ag.
6. A light-emitting device according to claim 5 , wherein the mirror layer comprises a thickness between 500 Å and 5000 Å.
7. A light-emitting device according to claim 5 , further comprising a second barrier layer between the mirror layer and the conductive layer.
8. A light-emitting device according to claim 7 , wherein the second barrier layer comprises a fifth metal layer and a sixth metal layer, and the fifth metal layer or the sixth metal layer comprises a material selected from a group consisting of Cr, Pt, Ti, TiW, W, and Zn.
9. A light-emitting device according to claim 8 , further comprising a third conductive layer on the second conductive layer and a fourth barrier layer between the second conductive layer and the third conductive layer.
10. A light-emitting device according to claim 9 , wherein the third barrier layer and the fourth barrier layer comprise a same material.
11. A light-emitting device according to claim 9 , wherein each of the third barrier layer and the fourth barrier layer is a single metal layer.
12. A light-emitting device according to claim 11 , wherein the single metal layer comprises a thickness between 500 Å and 1500 Å.
13. A light-emitting device according to claim 1 , wherein the bonding layer comprises a first metal comprising Au, and the conductive layer comprises a second metal comprising Al, Ag or Cu.
14. A light-emitting device according to claim 1 , wherein the first barrier layer comprises a third metal layer and a fourth metal layer.
15. A light-emitting device according to claim 14 , wherein the third metal layer is one to three times thicker than the fourth metal layer.
16. A light-emitting device according to claim 14 , wherein, the third metal layer or the fourth metal layer comprises a material selected from a group consisting of Cr, Pt, Ti, TiW, W, and Zn.
17. A light-emitting device according to claim 1 , wherein the electrode structure comprises a center region and an edge region, a thickness of the first barrier layer at the edge region of the electrode structure is smaller than that at the center region, and the first barrier layer comprises a top surface and a sidewall both covered by the bonding layer.
18. A light-emitting device according to claim 17 , wherein the bonding layer at the edge region of the electrode structure comprises a thickness smaller than that at the center region of the electrode structure.
19. A light-emitting device according to claim 18 , wherein the conductive layer at the edge region of the electrode structure comprises a thickness smaller than that at the center region of the electrode structure.
20. A light-emitting device, comprising:
a first semiconductor layer;
an active layer on the first semiconductor layer;
a second semiconductor layer on the active layer; and
an electrode structure on the second semiconductor layer,
wherein the electrode structure comprises a conductive layer on the second semiconductor layer, a bonding layer on the conductive layer, and a first barrier layer between the bonding layer and the conductive layer,
wherein the first barrier layer comprises a material selected from a group consisting of Cr, Pt, Ti, TiW, W, and Zn, and
wherein the total thickness of the conductive layer and the bonding layer is about 0.50.8 times the total thickness of the electrode structure;
wherein the bonding layer comprises a first metal, and the plurality of conductive layers comprise a second metal, and the second metal has higher standard oxidation potential than the first metal.