Temperature and V

1. A power MOSFET drain-source on resistance (Rdson) compensation device comprising:

analog circuitry configured to receive an input signal proportional to a voltage drop across a power MOSFET, one or more base reference, a voltage-dependent reference, and a temperature-dependent reference, wherein the analog circuitry of the compensation circuit is configured to produce an output current corresponding to the input signal with compensation for gate-source voltage (VGS) and temperature variation of a drain-source on resistance of the power MOSFET wherein the temperature-dependent reference corresponds to a first base reference voltage plus a temperature coefficient for the power MOSFET Rdson multiplied by a change in a temperature and the voltage-dependent reference corresponds to a second base reference voltage minus a VGS voltage coefficient for the power MOSFET Rdson multiplied by a change in a gate-source voltage of the power MOSFET.

2. The power MOSFET Rdson compensation device of claim 1 wherein the input signal is a current proportional to the voltage drop across the power MOSFET.

3. The power MOSFET Rdson compensation device of claim 2 wherein the input signal is produced by a first trans-conductance amplifier having a first input coupled to a source of the power MOSFET and a second input coupled to a drain of the power MOSFET.

4. The power MOSFET Rdson compensation device of claim 1 , wherein the input signal with VGS voltage coefficient and temperature coefficient compensation is a current proportional to the voltage drop across the power MOSFET divided by VGS voltage coefficient terms and temperature coefficient compensation terms.

5. A power MOSFET drain-source on resistance (Rdson) compensation device comprising:

analog circuitry configured to receive an input signal proportional to a voltage drop across a power MOSFET, one or more base reference, a voltage-dependent reference, and a temperature-dependent reference, wherein the analog circuitry of the compensation circuit is configured to produce an output current corresponding to the input signal with compensation for gate-source voltage (VGS) and temperature variation of a drain-source on resistance of the power MOSFET wherein the analog circuitry includes first, second, third and fourth MOSFETs, wherein each of the first, second, third and fourth MOSFETs operate in a deep triode region.

6. The power MOSFET Rdson compensation device of claim 5 wherein the analog circuitry includes first, second and third amplifiers, wherein an output of the first amplifier is conductively coupled to a gate of the first MOSFET and a gate of the third MOSFET, wherein an output of the second amplifier is conductively coupled to a gate of the second MOSFET and a gate of the fourth MOSFET, and wherein a first input of the third amplifier is conductively coupled to a drain of the third MOSFET and a second input of the third amplifier is conductively coupled to a drain of the fourth MOSFET.

7. The power MOSFET Rdson compensation device of claim 5 , wherein a drain of first MOSFET is coupled to a temperature dependent reference current and a drain of the second MOSFET is coupled to a reference current that is proportional to one of the one or more reference voltages and the temperature-dependent reference current is proportional to the temperature-dependent reference voltage.

8. The power MOSFET Rdson compensation device of claim 7 , wherein the reference current is from an output node of a second trans-conductive amplifier and the temperature-dependent reference current is from an output node of a third trans-conductance amplifier, wherein an input node of the third trans-conductance amplifier is conductively coupled to the temperature-dependent reference voltage.

9. The power MOSFET Rdson compensation device of claim 6 wherein a first input node of the first amplifier is conductively coupled one of the one or more reference voltages and a second input node of the first amplifier is conductively coupled to a drain of the first MOSFET and wherein the first input node of the second amplifier is conductively coupled to the voltage-dependent reference voltage and a second input node of the second amplifier is conductively coupled to a drain of the second MOSFET.

10. The power MOSFET Rdson compensation device of claim 6 wherein the drain of the fourth MOSFET is conductively coupled to a source of the fifth MOSFET operating in a saturation region and the output current is flows from a drain of the fifth MOSFET.