Pedestal for supporting a seed for SiC single crystal growth which includes a gas-permeable region of reduced thickness

1. A pedestal supporting a seed for crystal growth in a sublimation method,

wherein the pedestal is made of a carbon material,

the pedestal has a plate shape and has a first main surface and a second main surface,

the first main surface is flat to support the seed and the second main surface has a plurality of concavities,

a thickness of a portion of the pedestal with the concavities is 1 mm or more and less than 5 mm in a lowest area thereof,

a thickness of a portion of the pedestal without the concavities is 10 mm or more, and

in plan view from a thickness direction, one of the plurality of concavities is disposed at a center of the pedestal, a diameter of the one of the plurality of concavities being more than diameters of other ones of the plurality of concavities.

2. The pedestal according to claim 1 , wherein, in the plan view from the thickness direction, when a distance from a center of the pedestal to an outer circumference thereof is set to r, the plurality of concavities are included in the range of the distance r/2 from the center of the pedestal.

3. A SiC single crystal manufacturing apparatus, comprising: the pedestal according to claim 1 .

4. The pedestal according to claim 1 ,

wherein the concavities are disposed to overlap a center of the first main surface and to be symmetrical with respect to the center of the first main surface in the circumferential direction.

5. The pedestal according to claim 1 ,

wherein a portion of the plurality of concavities overlaps a central portion of the first main surface and portions of the plurality of concavities, other than the portion thereof which overlaps the central portion of the first main surface, overlap an outer circumferential part of the first main surface, the outer circumferential part of the first main surface being disposed on an outside circumference of the central portion thereof.

6. The pedestal according to claim 1 ,

wherein a portion of the plurality of the concavities overlaps a center portion of the first main surface and portions of the plurality of the concavities, other than the portion thereof which overlaps the central portion of the first main surface, overlap an outer circumferential part of the first main surface, the outer circumferential part of the first main surface being disposed on an outside circumference of the central portion thereof, and

wherein, the portion of the plurality of concavities which overlaps the center portion of the first main surface is wider than the portions of the plurality of the concavities which overlap the outer circumferential part of the first main surface.

7. The pedestal according to claim 1 ,

wherein a portion of the plurality of concavities overlaps a center portion of the first main surface and portions of the plurality of concavities, other than the portion thereof which overlaps the central portion of the one first main surface, overlap an outer circumferential part of the first main surface, the outer circumferential part of the first main surface being disposed on an outside circumference of the central portion thereof,

wherein, the portion of the plurality of concavities which overlaps the center portion of the first main surface is wider than the portions of the plurality of concavities which overlap the outer circumferential part of the first main surface, and

wherein, the portion of the plurality of concavities overlapping the center portion of the first main surface is disposed to overlap the center of the first main surface and the portions of the plurality of concavities overlapping the outer circumferential part of the first main surface is disposed to be symmetrical with respect to the center of the first main surface in the circumferential direction.

8. The pedestal according to claim 4 ,

wherein the plurality of concavities are disposed in a hexagonal shape.