Heat transfer for power modules

1. An apparatus, comprising:

a direct bonded metal (DBM) substrate including an insulator layer;

a semiconductor die coupled with a first side of the insulator layer;

a direct-bonded metal layer disposed on a second side of the insulator layer, the second side being opposite the first side;

a plurality of metal fins directly coupled with the direct-bonded metal layer; and

a metal ring coupled with the direct-bonded metal layer, the metal ring surrounding the plurality of metal fins.

2. The apparatus of claim 1 , wherein:

the plurality of metal fins have, orthogonal to the second side of the insulator layer, a height; and

the metal ring has, orthogonal to the second side of the insulator layer, a thickness,

the height being greater than the thickness.

3. The apparatus of claim 1 , wherein:

the first side of the insulator layer and the second side of the insulator layer have a first width and a first length; and

the metal ring has a second width aligned with the first width and second length aligned with the first length,

the second width being greater than the first width, and the second length being greater than the first length.

4. The apparatus of claim 3 , wherein the metal ring includes an opening, a perimeter of the opening being disposed around the plurality of metal fins,

the opening having a third width aligned with the first width and the second width, and a third length aligned with the first length and the second length,

the third width being less than the first width and less than the second width, and

the third length being less than the first length and less than the second length.

5. The apparatus of claim 1 , wherein the plurality of metal fins and the metal ring are directly coupled with the direct-bonded metal layer via active metal brazing.

6. The apparatus of claim 1 , further comprising:

a cover coupled with the metal ring, the cover including a channel, the plurality of metal fins being disposed within the channel; and

a sealing mechanism disposed between the cover and the metal ring.

7. The apparatus of claim 6 , wherein the cover includes an inlet opening and an outlet opening in fluid communication with the inlet opening via the channel.

8. The apparatus of claim 6 , wherein the sealing mechanism includes an O-ring disposed within a groove included in the cover.

9. The apparatus of claim 6 , wherein the sealing mechanism includes an O-ring disposed within a groove included in the metal ring.

10. The apparatus of claim 6 , wherein the cover is a first cover, the apparatus, further comprising:

a molding compound encapsulating the DBM substrate and the semiconductor die; and

a second cover coupled with the molding compound.

11. The apparatus of claim 10 , wherein the first cover is coupled to the second cover via a coupling mechanism disposed lateral to the DBM substrate.

12. The apparatus of claim 1 , wherein:

the direct-bonded metal layer is a direct-bonded copper layer;

the plurality of metal fins is a plurality of copper fins; and

the metal ring is a copper ring.

13. The apparatus of claim 1 , wherein the semiconductor die is a first semiconductor die, the apparatus, further comprising one or more other semiconductor die coupled to the first side of the insulator layer.

14. The apparatus of claim 13 , wherein the direct-bonded metal layer is a first direct-bonded metal layer, the apparatus further comprising a second direct-bonded metal layer disposed on the first side of the insulator layer, the second direct-bonded metal layer being disposed between the insulator layer and the first semiconductor die, and between the insulator layer and the one or more other semiconductor die.

15. The apparatus of claim 14 , wherein:

the first direct-bonded metal layer is a first direct-bonded copper layer; and

the second direct-bonded metal layer is a second direct-bonded copper layer.

16. An apparatus, comprising:

a semiconductor die;

a direct-bonded-metal substrate, the semiconductor die being coupled with a first side of an insulator layer of the direct-bonded-metal substrate;

a direct-bonded metal layer disposed on a second side of the insulator layer, the second side being opposite the first side;

a plurality of metal fins that are active metal brazed directly to the direct-bonded metal layer; and

a metal ring that is active metal brazed with the direct-bonded metal layer, the metal ring surrounding the plurality of metal fins.

17. The apparatus of claim 16 , wherein the semiconductor die is a first semiconductor die and the direct-bonded metal layer is a first direct-bonded metal layer, the apparatus, further comprising:

one or more other semiconductor die coupled to the first side of the insulator layer; and

a second direct bonded metal layer disposed on the first side of the insulator layer, the second direct-bonded metal layer being disposed between the insulator layer and the first semiconductor die, and between the insulator layer and the one or more other semiconductor die.

18. A method for forming a module, the method comprising:

coupling a semiconductor die with a first side of an insulator layer of a direct-bonded metal (DBM) substrate;

directly coupling a plurality of metal fins with a metal layer of the DBM substrate, the metal layer being disposed on a second side of the insulator layer; and

coupling a metal ring with the metal layer, the metal ring surrounding the plurality of metal fins.

19. The method of claim 18 , wherein:

directly coupling the plurality of metal fins with the metal layer includes active metal brazing the plurality of metal fins with the metal layer; and

coupling the metal ring with the metal layer includes active metal brazing the metal ring directly with the metal layer.

20. The method of claim 18 , further comprising:

coupling a cover with the metal ring, the cover including a channel, the plurality of metal fins being disposed within the channel, the coupling the cover with the metal ring creating a water-tight seal between the metal ring and the cover.