IP Library › Granted Patent US 11,069,313
Granted Patent B2
US 11,069,313 · App. 16/512,733 · Granted Jul 20, 2021

Driver circuit

Inventors: Sheng-Feng Huang (Miao-Li County, TW); Akihiro Iwatsu (Miao-Li County, TW); Cheng-Min Wu (Miao-Li County, TW); Kuanfeng Lee (Miao-Li County, TW)
Assignee: INNOLUX CORPORATION
G09G3/3648G02F1/1368G02F1/136286G09G2310/08
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Quick Facts
Patent No.
US 11,069,313
App. No.
16/512,733
Granted
Jul 20, 2021
Kind
B2
Abstract

A driver circuit which includes an output circuit and a control circuit coupled to the output circuit. The driver circuit includes a pull-up transistor with a silicon semiconductor layer. The control circuit includes a first transistor with an oxide semiconductor layer.

Claims (30)

1. A driver circuit, comprising:

an output circuit including a pull-up transistor; and

a control circuit coupled to the output circuit, the control circuit including a first transistor;

wherein the pull-up transistor is a polysilicon transistor, and the first transistor is an oxide semiconductor transistor;

wherein the control circuit further includes a third transistor having a first end directly connected to a high voltage, a second end directly connected to a second control node, and a third end directly connected to a second clock signal;

wherein the control circuit further includes a fourth transistor having a first end connected to the second control node, a second end connected to a low voltage, and a third end connected to a first control node directly connected to the first transistor;

wherein the control circuit further includes a second transistor having a bottom gate structure, and an auxiliary transistor having a top gate structure; and

wherein the second transistor and the auxiliary transistor commonly share a gate.

2. The driver circuit of claim 1 , wherein the pull-up transistor has a first end connected to a first clock signal, a second end connected to a gate line and one end of a first capacitor, and a third end coupled to the first control node and the other end of the first capacitor, and

wherein the pull-up transistor is a polysilicon transistor.

3. The driver circuit of claim 1 , wherein the first transistor has a first end connected to a high voltage, a second end connected to the first control node, and a third end connected to a previous gate line; and

wherein the first transistor is an oxide semiconductor transistor.

4. The driver circuit of claim 1 , wherein the output circuit further includes the auxiliary transistor having a first end connected to a second end of the pull-up transistor, a second end connected to the low voltage, and a third end coupled to the second control node; and wherein the auxiliary transistor is a polysilicon transistor.

5. The driver circuit of claim 1 , wherein the control circuit further includes the second transistor having a first end connected to the first control node, a second end connected to the low voltage, and a third end connected to the second control node; and wherein the second transistor is an oxide semiconductor transistor.

6. The driver circuit of claim 1 ,

wherein the fourth transistor is an oxide semiconductor transistor.

7. The driver circuit of claim 1 wherein the second transistor and the auxiliary transistor form a stack-up structure.

8. The driver circuit of claim 1 , wherein the second transistor is an oxide semiconductor transistor having a width-to-length ratio WILI, and the auxiliary transistor is a polysilicon semiconductor transistor having a width-to-length ratio WL/LL.

9. The driver circuit of claim 8 , the width-to-length ratio WI/LI of the oxide semiconductor transistor is adjustable without disturbing a circuit layout of the polysilicon transistor.

10. The driver circuit of claim 1 , further comprising a fifth transistor coupled to the first control node, a high voltage, and the first transistor.

11. The driver circuit of claim 10 , wherein the fifth transistor is a polysilicon transistor.

12. The driver circuit of claim 1 , wherein the first transistor is diode-connected.

13. A display device, comprising:

a driver circuit, comprising:

an output circuit including a pull-up transistor; and

a control circuit coupled to the output circuit, the control circuit including a first transistor;

wherein the pull-up transistor is a polysilicon transistor, and the first transistor is an oxide semiconductor transistor;

wherein the control circuit further includes a third transistor having a first end directly connected to a high voltage, a second end directly connected to a second control node, and a third end directly connected to a second clock signal;

wherein the third transistor is an oxide semiconductor transistor;

wherein the control circuit further includes a second transistor having a bottom gate structure, and an auxiliary transistor having a top gate structure, and the second transistor and the auxiliary transistor commonly share a gate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 16, 2019
From: HUANG, SHENG-FENG; IWATSU, AKIHIRO; WU, CHENG-MIN; LEE, KUANFENG
To: INNOLUX CORPORATION
Reel/Frame 049764/0618 →
Priority Claims (1)
TW 105119030 · Jun 17, 2016 · national
Continuity (3)
Continuation 15365990 · Dec 1, 2016
Provisional Application 62262430 · Dec 3, 2015
Related Publication 20190340987A1 · Nov 7, 2019