Radio-frequency module and communication device
A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.
1. A radio-frequency module comprising:
a power amplifier composed of a plurality of cascade-connected amplification elements; and
a mounting substrate having a first main surface and a second main surface that face each other, the power amplifier being mounted on the first main surface;
wherein the plurality of amplification elements includes
a first amplification element arranged in a final stage of the plurality of amplification elements and having a first ground terminal, and
a second amplification element arranged in a stage preceding the first amplification element and having a second ground terminal,
an inside of the mounting substrate includes a plurality of ground electrode layers substantially parallel to the first main surface and having first to nth ground electrode layers in order of proximity to the first main surface, wherein n is an integer greater than or equal to 2 and
the first ground terminal and the second ground terminal are not electrically connected to each other via an electrode on the first main surface of the mounting substrate and are not electrically connected to each other via the first ground electrode layer.
2. The radio-frequency module according to claim 1 , wherein the first ground terminal and the second ground terminal are not connected to each other via the plurality of ground electrode layers of the mounting substrate.
3. The radio-frequency module according to claim 1 , wherein the mounting substrate includes a via conductor having a long shape in a plan view of the mounting substrate, and
the first ground terminal and the via conductor are connected to each other at the first main surface.
4. The radio-frequency module according to claim 1 , further comprising:
a connection electrode connected to a surface of the power amplifier;
wherein the mounting substrate includes a via conductor having a long shape in a plan view of the mounting substrate, and
the connection electrode and the via conductor are connected to each other at the first main surface.
5. The radio-frequency module according to claim 4 , wherein the connection electrode is a first bump electrode having a long shape in the plan view,
longitudinal directions of the first bump electrode and the via conductor are identical to each other in the plan view, and the first bump electrode and the via conductor are connected to each other in an overlapping region in which the first bump electrode and the via conductor at least partially overlap in the plan view, and
the overlapping region is a region being long in the longitudinal directions.
6. The radio-frequency module according to claim 5 , wherein the first amplification element is a bipolar transistor having a base terminal, a collector terminal, and an emitter terminal, and wherein a driving current flows from the collector terminal to the emitter terminal in the bipolar transistor, and
the emitter terminal is the first ground terminal.
7. The radio-frequency module according to claim 6 , further comprising:
a second bump electrode connected to the surface of the power amplifier;
wherein the second bump electrode is connected to the base terminal and/or the collector terminal, and
an area of the first bump electrode is larger than an area of the second bump electrode in the plan view.
8. The radio-frequency module according to claim 5 , wherein the first amplification element is a field effect transistor having a gate terminal, a drain terminal, and a source terminal, and wherein a driving current flows from the drain terminal to the source terminal in the field effect transistor, and
the source terminal is the first ground terminal.
9. The radio-frequency module according to claim 8 , further comprising:
a second bump electrode connected to the surface of the power amplifier;
wherein the second bump electrode is connected to the gate terminal and/or the drain terminal, and
an area of the first bump electrode is larger than an area of the second bump electrode in the plan view.
10. The radio-frequency module according to claim 5 , wherein the first bump electrode is a columnar electrode having copper as a main component.
11. The radio-frequency module according to claim 5 , wherein the mounting substrate further includes a non-conductive part consisting of a body of the mounting substrate and contacting with an outer periphery of the via conductor, and
the first bump electrode includes a region not overlapping the via conductor and overlapping the non-conductive part in the plan view.
12. A communication device comprising:
an RF signal processing circuit processing a radio-frequency signal transmitted or received by an antenna element; and
the radio-frequency module according to claim 1 , the radio-frequency module transmitting the radio-frequency signal between the antenna element and the RF signal processing circuit.
13. The radio-frequency module according to claim 2 , wherein the mounting substrate includes a via conductor having a long shape in a plan view of the mounting substrate, and
the first ground terminal and the via conductor are connected to each other at the first main surface.
14. The radio-frequency module according to claim 2 , further comprising:
a connection electrode connected to a surface of the power amplifier;
wherein the mounting substrate includes a via conductor having a long shape in a plan view of the mounting substrate, and
the connection electrode and the via conductor are connected to each other at the first main surface.
15. The radio-frequency module according to claim 6 , wherein the first bump electrode is a columnar electrode having copper as a main component.
16. The radio-frequency module according to claim 7 , wherein the first bump electrode is a columnar electrode having copper as a main component.
17. The radio-frequency module according to claim 8 , wherein the first bump electrode is a columnar electrode having copper as a main component.
18. The radio-frequency module according to claim 9 , wherein the first bump electrode is a columnar electrode having copper as a main component.
19. The radio-frequency module according to claim 10 , wherein the first bump electrode is a columnar electrode having copper as a main component.
20. The radio-frequency module according to claim 6 , wherein the mounting substrate further includes a non-conductive part consisting of a body of the mounting substrate and contacting with an outer periphery of the via conductor, and
the first bump electrode includes a region not overlapping the via conductor and overlapping the non-conductive part in the plan view.