Self-referencing sensing schemes with coupling capacitance
Methods, systems, and devices for self-referencing sensing schemes with coupling capacitance are described. A sense component of a memory device may include a capacitive coupling between two nodes of the sense component. The capacitive coupling may, in some examples, be provided by a capacitive element of the sense component or an intrinsic capacitance between features of the sense component. An example of a method employing such a sense component for detecting a logic state stored by a memory cell may include generating a first sense signal at one of the nodes while the node is coupled with the memory cell, and generating a second sense signal at the other of the nodes while the other node is coupled with the memory cell. The sense signals may be based at least in part on the capacitive coupling between the two nodes.
1. An apparatus, comprising:
a sense component in electronic communication with a memory cell via a first access line;
a capacitance between a first node of the sense component and a second node of the sense component; and
a controller in electronic communication with the sense component and the memory cell, wherein the controller is operable to cause the apparatus to:
generate a first sense signal at the first node of the sense component while the memory cell is coupled with the first node of the sense component;
generate a second sense signal at the second node of the sense component while the memory cell is coupled with the second node of the sense component, wherein the second sense signal is based at least in part on the generated first sense signal and the capacitance between the first node of the sense component and the second node of the sense component; and
determine a logic state stored by the memory cell based at least in part on generating the first sense signal and generating the second sense signal.
2. The apparatus of claim 1 , wherein the memory cell comprises a capacitive memory element.
3. The apparatus of claim 1 , wherein determining the logic state stored by the memory cell comprises:
comparing a voltage of the first node of the sense component with a voltage of the second node of the sense component.
4. The apparatus of claim 1 , wherein generating the second sense signal at the second node of the sense component causes a change in voltage at the first node of the sense component.
5. The apparatus of claim 1 , wherein generating the first sense signal comprises:
building a first charge along an access line that is coupled between the memory cell and the sense component, wherein the first charge is based at least in part on a charge stored at the memory cell, the charge stored at the memory cell corresponding to the logic state stored by the memory cell.
6. The apparatus of claim 1 , wherein generating the second sense signal comprises:
building a second charge along an access line that is coupled between the memory cell and the sense component, wherein the second charge is based at least in part on a charge stored at the memory cell, the charge stored at the memory cell corresponding to a reference state stored by the memory cell.
7. A method, comprising:
generating a first voltage at a first node of a sense amplifier based at least in part on a first accessing of a memory cell;
generating a second voltage at a second node of the sense amplifier based at least in part on a second accessing of the memory cell, wherein the second voltage is based at least in part on generating the first voltage and a capacitive coupling between the first node of the sense amplifier and the second node of the sense amplifier; and
determining a logic state stored by the memory cell based at least in part on the second voltage and a third voltage at the first node that is based at least in part on generating the second voltage.
8. The method of claim 7 , wherein determining the logic state stored by the memory cell comprises:
comparing the second voltage to the third voltage.
9. The method of claim 7 , wherein generating the first voltage comprises:
selectively coupling the memory cell with an access line, wherein the first voltage is based at least in part on a first charge sharing between the memory cell and the access line.
10. The method of claim 9 , wherein generating the first voltage comprises:
selectively coupling the first node of the sense amplifier with the access line via a first switching component.
11. The method of claim 10 , further comprising:
selectively decoupling the first node of the sense amplifier from the access line via the first switching component after generating the first voltage and before generating the second voltage.
12. The method of claim 9 , wherein generating the second voltage comprises:
selectively decoupling the memory cell from the access line after generating the first voltage and before generating the second voltage.
13. The method of claim 9 , wherein generating the second voltage comprises:
selectively coupling the second node of the sense amplifier with the access line via a second switching component.
14. The method of claim 9 , wherein the second node of the sense amplifier is selectively decoupled from the access line via a second switching component during the generating of the first voltage.
15. An apparatus, comprising:
a memory cell configured to be selectively coupled with an access line;
a sense amplifier comprising a first node, a second node, and a capacitive coupling between the first node and the second node;
a first switching component operable to selectively couple the first node with the access line; and
a second switching component operable to selectively couple the second node with the access line,
wherein the apparatus is operable to determine a logic state of the memory cell based at least in part on the capacitive coupling between the first node and the second node.
16. The apparatus of claim 15 , wherein, to determine the logic state of the memory cell, the apparatus is operable to generate a first voltage at the first node based at least in part on selectively coupling the memory cell with the access line and activating the first switching component.
17. The apparatus of claim 16 , wherein the apparatus is operable to deactivate the second switching component during the generation of the first voltage.
18. The apparatus of claim 16 , wherein, to determine the logic state of the memory cell, the apparatus is operable to generate a second voltage at the second node based at least in part on selectively coupling the memory cell with the access line and activating the second switching component, the second voltage based at least in part on the first voltage and the capacitive coupling between the first node and the second node.
19. The apparatus of claim 18 , wherein the apparatus is operable to deactivate the first switching component during the generation of the second voltage.
20. The apparatus of claim 15 , further comprising:
a third switching component operable to selectively adjust the capacitive coupling between the first node and the second node.