Si-CONTAINING FILM FORMING PRECURSORS AND METHODS OF USING THE SAME
Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH 3 ) 2 N—SiH 2 —X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C 4 -C 10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.
1 . A silicon- and nitrogen-containing film formation process, the process comprising the steps of:
depositing a silicon- and nitrogen-containing film on a substrate by introducing a vapor of a mono-substituted TSA precursor and a nitrogen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH 3 ) 2 N—SiH 2 —X, wherein X is a halogen atom or an amino group [—NR 2 ] and each R is independently selected from the group consisting of H; a C 1 -C 6 hydrocarbyl group; or a silyl group [SiR′ 3 ] with each R′ being independently selected from H or a C 1 -C 6 hydrocarbyl group.
2 . The silicon- and nitrogen-containing film formation process of claim 1 , wherein X is Cl, Br, or I.
3 . The silicon- and nitrogen-containing film formation process of claim 2 , wherein X is Cl.
4 . The silicon- and nitrogen-containing film formation process of claim 1 , wherein X is NiPr 2 .
5 . The silicon- and nitrogen-containing film formation process of claim 1 , wherein X is NEt 2 .
6 . The silicon- and nitrogen-containing film formation process of claim 1 , wherein X is N(SiH 3 ) 2 .
7 . The silicon- and nitrogen-containing film formation process of claim 1 , wherein the nitrogen-containing reactant is selected from the group consisting of ammonia, N 2 , N atoms, N radicals, N ions, saturated or unsaturated hydrazine, amines, diamines, ethanolamine, and combinations thereof.
8 . The silicon- and nitrogen-containing film formation process of claim 7 , wherein the nitrogen-containing reactant is NH 3 .
9 . The silicon- and nitrogen-containing film formation process of claim 8 , wherein the mono-substituted TSA precursor and the nitrogen-containing reactant are introduced into the reactor simultaneously.
10 . The silicon- and nitrogen-containing film formation process of claim 7 , wherein the nitrogen-containing reactant is plasma N 2 .
11 . The silicon- and nitrogen-containing film formation process of claim 10 , wherein the mono-substituted TSA precursor and the nitrogen-containing reactant are introduced into the reactor sequentially.
12 . An ALD silicon nitride film formation process, the process comprising the steps of:
depositing on a substrate a silicon nitride film having an etch rate from 0.1% w/w HF normalized to thermally grown silicon dioxide in a range from approximately 0.7 to approximately 3.5 by sequentially introducing a vapor of a mono-substituted TSA precursor and a nitrogen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH 3 ) 2 N—SiH 2 —X, wherein X is a halogen atom or an amino group [—NR 2 ] and each R is independently selected from the group consisting of H or a C 1 -C 6 hydrocarbyl group.
13 . The ALD silicon nitride film formation process of claim 12 , wherein the nitrogen-containing reactant is selected from the group consisting of ammonia, N 2 , N atoms, N radicals, N ions, saturated or unsaturated hydrazine, amines, diamines, ethanolamine, and combinations thereof.
14 . The ALD silicon nitride film formation process of claim 13 , wherein the nitrogen-containing reactant is plasma N 2 .
15 . The ALD silicon oxide film formation process of claim 12 , wherein X is Cl, Br, or I.
16 . The ALD silicon oxide film formation process of claim 13 , wherein X is Cl, Br, or I.
17 . The ALD silicon oxide film formation process of claim 14 , wherein X is Cl, Br, or I.
18 . The ALD silicon oxide film formation process of claim 12 , wherein X is Cl.
19 . The ALD silicon oxide film formation process of claim 13 , wherein X is Cl.
20 . The ALD silicon oxide film formation process of claim 14 , wherein X is Cl.