Particle beam inspection apparatus
An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved load lock unit is disclosed. An improved load lock system may comprise a plurality of supporting structures configured to support a wafer and a conditioning plate including a heat transfer element configured to adjust a temperature of the wafer. The load lock system may further comprise a gas vent configured to provide a gas between the conditioning plate and the wafer and a controller configured to assist with the control of the heat transfer element.
1. A load lock system, comprising:
a plurality of supporting structures configured to support a wafer;
a first conditioning plate including a first heat transfer element configured to adjust a temperature of the wafer;
a first gas vent configured to provide a gas between the first conditioning plate and the wafer; and
a controller including a processor and a memory, the controller configured to assist with control of the first heat transfer element to condition the wafer before the wafer is transferred from the load lock system to a main chamber for inspection.
2. The load lock system of claim 1 , wherein the first conditioning plate is positioned above the wafer.
3. The load lock system of claim 1 , wherein the first conditioning plate is positioned below the wafer.
4. The load lock system of claim 1 , wherein the plurality of supporting structures are coupled to the first conditioning plate.
5. The load lock system of claim 1 , wherein the first gas vent is included in the first conditioning plate.
6. The load lock system of claim 1 , wherein the controller is further configured to assist with the control of the first heat transfer element based on a temperature of a wafer stage.
7. The load lock system of claim 1 , further comprising a second conditioning plate including a second heat transfer element configured to adjust the temperature of the wafer.
8. The load lock system of claim 7 , wherein the plurality of supporting structures configured to support a wafer are positioned between the first conditioning plate and the second conditioning plate.
9. The load lock system of claim 7 , further comprising a second gas vent configured to provide a portion of the gas between the second conditioning plate and the wafer.
10. The load lock system of claim 7 , wherein the controller is further configured to assist with controlling the second heat transfer element based on a temperature of the wafer stage.
11. The load lock system of claim 1 , further comprising a load lock chamber configured to enclose the first conditioning plate, the plurality of supporting structures, and the wafer.
12. The load lock system of claim 11 , further comprising a second vacuum pump connected to the load lock chamber.
13. The load lock system of claim 12 , wherein the controller is further configured to:
enable the first vacuum pump to reduce pressure inside of the load lock chamber to a first pressure level, and
enable the second vacuum pump to reduce pressure inside of the load lock chamber to a second pressure level, wherein the second pressure level is lower than the first pressure level.
14. The load lock system of claim 13 , wherein the second vacuum pump shares an exhaust path with a third vacuum pump connected to a main chamber.
15. A non-transitory computer readable medium including a set of instructions that is executable by one or more processors of a controller to cause the controller to perform a method conducting a thermal conditioning of a wafer, the method comprising:
instructing a first vacuum pump to pump down a load lock chamber of a load lock system after a wafer is loaded into the load lock chamber;
instructing a gas supply to provide a gas to the load lock chamber; and
instructing a first heat transfer element in a first conditioning plate to adjust a temperature of the first conditioning plate for transferring heat through the gas to the wafer to condition the wafer before the wafer is transferred from the load lock chamber to a main chamber for inspection, the gas being provided between the first conditioning plate and the wafer.