Integrated structures, capacitors and methods of forming capacitors
Some embodiments include an integrated structure having a semiconductor base and an insulative frame over the semiconductor base. The insulative frame has vertically-spaced sheets of first insulative material, and pillars of second insulative material between the vertically-spaced sheets. The first and second insulative materials are different from one another. Conductive plates are between the vertically-spaced sheets and are directly against the insulative pillars. Some embodiments include capacitors, and some embodiments include methods of forming capacitors.
1. An integrated structure, comprising:
a semiconductor base;
an insulative frame over the semiconductor base; the insulative frame comprising vertically-spaced sheets of first insulative material, and pillars of second insulative material between the vertically-spaced sheets; the first and second insulative materials being different from one another; and
conductive plates between the vertically-spaced sheets, the conductive plates being directly against the insulative pillars.
2. The integrated structure of claim 1 wherein one of the first and second insulative materials comprises silicon dioxide and the other comprises silicon nitride.
3. The integrated structure of claim 1 wherein the conductive plates comprise metal.
4. The integrated structure of claim 1 wherein the conductive plates comprise one or more of tungsten, titanium, tungsten nitride and titanium nitride.
5. The integrated structure of claim 1 wherein the conductive plates are each subdivided amongst electrically isolated regions by the insulative pillars.
6. The integrated structure of claim 1 wherein the conductive plates are each a continuous sheet wrapping around the insulative pillars.
7. The integrated structure of claim 1 wherein the vertically-spaced sheets form first levels, and the conductive plates are along second levels which alternate with the first levels; and wherein the insulative pillars form walls which subdivide the conductive plates of individual second levels into panels.
8. The integrated structure of claim 7 wherein at least some of the panels of an individual second level are electrically coupled with one another.
9. The integrated structure of claim 7 wherein all of the panels of an individual second level are electrically coupled with one another.
10. The integrated structure of claim 7 wherein at least some of the panels of an individual second level are not electrically coupled with one another.
11. The integrated structure of claim 7 wherein none of the panels of an individual second level are electrically coupled with one another.