Electronic device including a high electron mobility transistor including a gate electrode and a dielectric film

1. An electronic device comprising a high electron mobility transistor comprising:

a gate electrode having a top surface;

a drain electrode;

an access region including a first portion closer to the gate electrode and a second portion closer to the drain electrode;

a first dielectric film including a first material and overlying the first portion and not the second portion of the access region, wherein the first dielectric film includes a portion that overlies the top surface of the gate electrode, and the first dielectric film is spaced apart from the drain electrode; and

a second dielectric film including a second material and overlying the second portion of the access region, wherein the second material is different from the first material.

2. The electronic device of claim 1 , wherein:

the first dielectric film includes Si 3 N 4 , SiO k N l , where k<l, AlN, AlO r N s , where r<s, or another nitrogen-containing dielectric material that provides a negatively charged dielectric film, and

the second dielectric film includes Al 2 O 3 , AlO t N u , where t>u, SiO 2 , HfO 2 , SiO m N n , where m>n, or another oxygen-containing dielectric material that provides a positively charged dielectric film.

3. The electronic device of claim 1 , wherein the gate electrode has a first sidewall that meets the top surface of the gate electrode at a first corner, and the first dielectric film contacts the top surface and sidewall of the gate electrode at the first corner.

4. The electronic device of claim 3 , further comprising a gate interconnect, wherein gate electrode has a second sidewall opposite the first sidewall, the second sidewall meets the top surface at a second corner, and the gate interconnect contacts a portion of the top surface of the gate electrode and is spaced apart from the first and second corners.

5. The electronic device of claim 4 , wherein:

the first dielectric film defines openings to the gate electrode, a portion of the first dielectric film is disposed between the openings, and

a gate interconnect extending into the openings of the dielectric film and contacting the gate electrode.

6. The electronic device of claim 4 , wherein a gate field electrode is part of or electrically connected to the gate interconnect, wherein the first dielectric film is disposed between the gate field electrode and the first portion of the access region.

7. The electronic device of claim 6 , wherein the first dielectric film extends a first distance over the access region, the gate field electrode extends a second distance over the access region, and the second distance is in a range from 0.5 times to 2.0 times the first distance.

8. The electronic device of claim 7 , further comprising a source electrode and a source field electrode that is part of or electrically connected to the source electrode, wherein:

the drain electrode is closer to the first corner of the gate electrode than to the second corner of the gate electrode,

the first dielectric film includes silicon nitride, and the second dielectric film includes aluminum oxide,

the first dielectric film contacts the top surface and the second sidewall of the gate electrode at the second corner,

the second dielectric film overlies the first portion of the access region, and

the drain electrode is closer to the source field electrode than to the gate field electrode.

9. The electronic device of claim 8 , wherein the second dielectric film includes a first portion extending from the gate interconnect to the drain electrode and a second portion extending from the gate interconnect to the source electrode.

10. The electronic device of claim 4 , further comprising a source electrode and a source field electrode that is part of or electrically connected to the source electrode, wherein at least a portion of the source field electrode overlies the gate field electrode.

11. The electronic device of claim 1 , further comprising a barrier layer underlying the gate electrode, wherein the barrier layer is relatively thinner closer to the gate electrode and relatively thicker closer to the drain electrode.

12. The electronic device of claim 1 , wherein the gate electrode has a body region and an extension region extending from the body region, wherein the body and extension regions have a same composition and lie along a bottom surface of the gate electrode, and the drain electrode is closer to the extension region than to the body region.

13. The electronic device of claim 1 , further comprising a source electrode, wherein the first dielectric film extends at least a portion of a distance from the gate electrode toward the source electrode.

14. The electronic device of claim 1 , further comprising:

a channel layer including Al x Ga (1-x) N, wherein 0≤x≤0.1; and

a barrier layer including Al y In z Ga (1-y-z) N, wherein 0≤y≤1.0, 0≤z≤0.3, 0<(y+z)≤1,

the barrier layer has a lower Ga content as compared to the channel layer, and the

barrier layer is disposed between the channel layer and the gate electrode.

15. The electronic device of claim 1 , wherein the gate electrode includes a III-N semiconductor material.

16. The electronic device of claim 1 , further comprising a gate dielectric layer underlying the gate electrode, wherein the gate electrode includes a metal or metal alloy in contact with the gate dielectric layer.

17. An electronic device comprising a high electron mobility transistor comprising:

a gate electrode having a top surface and a sidewall;

a drain electrode;

an access region including a first portion closer to the gate electrode and a second portion closer to the drain electrode, wherein each of the first portion and the second portion is between the gate electrode and the drain electrode; and

a dielectric film contacting the top surface and sidewall of the gate electrode and overlying the access region, wherein:

the dielectric film is a negatively charged film and relatively thicker over the first portion of the access region and relatively thinner over the second portion of the access region.

18. The electronic device of claim 17 , further including a gate field electrode that is part of or electrically connected to the gate electrode, wherein the gate field electrode extends over the relatively thinner portion of the dielectric film and not over the relatively thicker portion of the dielectric film.

19. The electronic device of claim 1 , further comprising a gate interconnect, wherein:

the first dielectric film defines openings to the gate electrode, wherein a portion of the first dielectric film is disposed between the openings; and

the gate interconnect extends into the openings of the first dielectric film and contacts the gate electrode and the portion of the first dielectric film.

20. An electronic device comprising a high electron mobility transistor comprising:

a gate electrode;

a drain electrode;

an access region including a first portion closer to the gate electrode and a second portion closer to the drain electrode;

a first dielectric film including a first material and overlying the first portion and not the second portion of the access region;

a second dielectric film including a second material and overlying the second portion of the access region, wherein the second material is different from the first material;

an interlevel dielectric layer overlying the first dielectric film and the second dielectric film; and

a gate interconnect extending through an opening in the interlevel dielectric layer and contacting the gate electrode.