IP Library › Granted Patent US 11,211,548
Granted Patent B2
US 11,211,548 · App. 16/516,333 · Granted Dec 28, 2021

Spin current magnetization reversal element, element assembly, and method for producing spin current magnetization reversal element

Inventors: Tomoyuki Sasaki (Tokyo, JP); Tatsuo Shibata (Tokyo, JP); Tohru Oikawa (Tokyo, JP)
Assignee: TDK CORPORATION
H01L43/02H01L43/08H01L43/10H01L43/12
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Quick Facts
Patent No.
US 11,211,548
App. No.
16/516,333
Granted
Dec 28, 2021
Kind
B2
Abstract

This spin current magnetization reversal element includes a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction that intersects the stacking direction of the magnetoresistance effect element, and contacts the surface of the magnetoresistance elect element on the side facing the second ferromagnetic metal layer, wherein at least one surface of the second ferromagnetic metal layer in the stacking direction has an inclined surface that is inclined in the first direction, and the direction of magnetization of the second ferromagnetic metal layer is inclined due to the inclined surface.

Claims (29)

1. A spin current magnetization reversal element comprising:

a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and

spin-orbit torque wiring which extends in a first direction that intersects a stacking direction of the magnetoresistance effect element, and contacts a surface of the magnetoresistance effect element on a side facing the second ferromagnetic metal layer, wherein

at least one surface of the second ferromagnetic metal layer in the stacking direction is an inclined surface that is inclined with respect to the first direction in an inclination direction,

the inclined surface is also inclined in a second direction that intersects the stacking direction and the first direction, and

the magnetization of the second ferromagnetic metal layer is oriented perpendicularly to the inclined surface.

2. The spin current magnetization reversal element according to claim 1 ,

wherein a surface of the second ferromagnetic metal layer having the inclined surface has a first inclined surface and a second inclined surface that have different positive and negative inclination angles relative to a reference plane, and

a surface area of the first inclined surface is greater than a surface area of the second inclined surface.

3. An element assembly comprising a plurality of spin current magnetization reversal elements according to claim 1 .

4. The element assembly according to claim 3 ,

wherein the inclined surfaces of the plurality of spin current magnetization reversal elements are inclined in the same direction.

5. A spin current magnetization reversal element comprising:

a ferromagnetic metal layer, and

spin-orbit torque wiring which extends in a first direction that intersects a stacking direction of the ferromagnetic metal layer, and contacts one surface of the ferromagnetic metal layer, wherein

at least one surface of the ferromagnetic metal layer in the stacking direction has an inclined surface that is inclined in the first direction, and

the magnetization of the ferromagnetic metal layer is oriented perpendicularly to the inclined surface.

6. A method for producing a spin current magnetization reversal element, the method having a stacking step of stacking a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction, wherein

either before or during the stacking step, an inclined surface that is inclined in the first direction is formed on at least one surface of the second ferromagnetic metal layer, and

the magnetization of the second ferromagnetic metal layer is oriented perpendicularly to the inclined surface.

7. The method for producing a spin current magnetization reversal element according to claim 6 ,

wherein the inclined surface is formed by polishing along the first direction.

8. The method for producing a spin current magnetization reversal element according to claim 6 ,

wherein the inclined surface is formed by anisotropic etching along the first direction.

9. The method for producing a spin current magnetization reversal element according to claim 6 ,

wherein the inclined surface is formed by anisotropic deposition along the first direction.

10. A method for producing a spin current magnetization reversal element, the method having a stacking step of stacking a ferromagnetic metal layer and spin-orbit torque wiring which extends in a first direction, wherein

either before or during the stacking step, an inclined surface that is inclined in the first direction is formed on at least one surface of the ferromagnetic metal layer, and

the magnetization of the ferromagnetic metal layer is oriented perpendicularly to the inclined surface.

Priority Claims (2)
JP 2016-149413 · Jul 29, 2016 · national
JP 2017-098340 · May 17, 2017 · national
Continuity (2)
Division 15642003 · Jul 5, 2017
Related Publication 20190348598A1 · Nov 14, 2019