System and method for bare wafer inspection

1. A defect review tool comprising:

a controller in communication with an electron-beam inspection tool, the controller having circuitry to:

acquire, via an optical imaging tool, coordinates of defects on a bare wafer;

set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects on the bare wafer;

determine a position on the hare wafer of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scan of the bare wafer;

adjust the coordinates of the defects based on the determined positions of the subset of the defects; and

set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

2. The defect review tool of claim 1 , wherein the first size is larger than the second size.

3. The defect review tool of claim 1 , wherein the bare wafer is an un-patterned wafer.

4. The defect review tool of claim 1 , wherein the controller having circuitry to adjust the coordinates of the defects based on the determined positions of the subset of the defects includes the controller having circuitry to:

determine a transformation relationship for the coordinates of the detects based on the determined positions of the subset of the defects;

map the coordinates acquired via the optical imaging tool to a new set of coordinates, based on the transformation relationship; and

set the new set of coordinates as the adjusted coordinates.

5. The defect review tool of claim 1 , wherein the controller having circuitry to adjust the coordinates of the defects based on the determined positions of the subset of the defects includes the controller having circuitry to:

select a number of defects;

control the electron-beam inspection tool to locate the selected detects;

determine positions of the selected defects based on the inspection data;

determine a transformation relationship for the coordinates of the detects based on the determined positions of the selected defects; and

adjust the coordinates of the defects based on the transformation relationship.

6. The defect review tool of claim 5 , wherein the controller has circuitry to select at least two defects as the subset of the defects.

7. The defect review tool of claim 5 , wherein the controller having circuitry to set the FoV of the electron-beam inspection tool to the second size includes the controller having circuitry to:

control the electron-beam inspection tool to locate a first defect, the first defect being different from the selected defects;

determine a position of the first defect based on the inspection data;

determine a difference between the determined position of the first defect and an adjusted coordinate of the first defect; and

when the difference is equal to or below a predetermined threshold, change the FoV of the electron-beam inspection tool to the second size to locate additional defects based on the adjusted coordinates.

8. The defect review tool of claim 7 , wherein the controller has circuitry to:

when the difference exceeds the predetermined threshold, update the transformation relationship based on the determined position of the first defect; and

further adjust the coordinates of the defects based on the updated transformation relationship.

9. The defect review tool of claim 1 , wherein the optical imaging tool is a laser-scattering defect inspection tool having circuitry to illuminate the bare wafer with a laser beam and to detect light scattered from the bare wafer.

10. The defect review tool of claim 9 , wherein the controller has circuitry to:

receive light-scattering data from the optical imaging tool; and

determine the coordinates of the defects based on the light-scattering data.

11. The defect review tool of claim 1 , wherein the electron-inspection tool comprises:

an electron source configured to generate a primary electron beam;

at least one condenser lens for condensing the primary electron beam;

a compound objective lens for focusing the primary electron beam to the hare wafer on a stage system, the compound objective lens comprising:

a first magnetic lens;

a second magnetic lens, wherein a shared pole piece is configured for both the first magnetic lens and the second magnetic lens; and

an electrostatic lens; and

a detection system for detecting charged particles or X-ray emanated from the bare wafer.

12. The defect review tool of claim 11 , wherein the first magnetic lens comprises an upper pole piece and a first excitation coil.

13. The defect review tool of claim 12 , wherein the second magnetic lens comprises a lower pole piece and a second excitation coil.

14. A system comprising:

an optical imaging tool including circuitry to illuminate a sample with a laser beam and detect light scattered from the sample;

an electron-beam inspection tool including circuitry to scan the sample with a primary electron beam to generate inspection data; and

a controller in communication with the optical imaging tool and the electron-beam inspection tool, the controller including circuitry to:

receive light-scattering data generated by the optical imaging tool;

determine coordinates of defects on the sample based on the light-scattering data;

set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects;

determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scan of the sample;

adjust the coordinates of the defects based on the determined positions of the subset of the defects; and

set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

15. A controller coupled with an electron-beam inspection tool configured to scan a sample with a primary electron beam to generate inspection data, the controller comprising:

a memory storing instructions; and

a processor configured to execute the instructions to cause the controller to:

acquire, via an optical imaging tool, coordinates of defects on the sample;

set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects;

determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scan of the sample;

adjust the coordinates of the defects based on the determined positions of the subset of the defects; and

set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.