High-efficiency QLED structures

1. A light-emitting layer structure comprising:

a first optical cavity comprising:

a first reflective electrode;

a first partially transparent electrode; and

a first emissive layer (EML) disposed between the first reflective electrode and the first partially transparent electrode, wherein the first EML is configured to emit light having a first wavelength;

wherein the first reflective electrode is configured to introduce a first phase shift, depending on the first wavelength, on reflection of light emitted by the first EML; and

a second optical cavity comprising:

a second reflective electrode;

a second partially transparent electrode; and

a second EML disposed between the second reflective electrode and the second partially transparent electrode, wherein the second EML is configured to emit light having a second wavelength;

wherein the second reflective electrode is configured to introduce a second phase shift, depending on the second wavelength, on reflection of light emitted by the second EML, and the first phase shift is different from the second phase shift and

wherein a first surface of the first reflective electrode has a first pattern to introduce the first phase shift corresponding to the first wavelength and a second surface of the second reflective electrode has a second pattern to introduce the second phase shift corresponding to the second wavelength, and the first pattern and the second pattern are configured as a plurality of apertures.

2. The light-emitting layer structure of claim 1 , wherein the first phase shift is configured to cause light having the first wavelength to propagate in the first optical cavity at a first mode and the second phase shift is configured to cause light having the second wavelength to propagate in the second optical cavity at a second mode.

3. The light-emitting layer structure of claim 1 , wherein the first reflective electrode comprises a first material for introducing the first phase shift and the second reflective electrode comprises a second material for introducing the second phase shift.

4. The light-emitting layer structure of claim 1 , wherein the first emissive layer and/or the second emissive layer includes quantum dots for light emission.

5. The light-emitting layer structure of claim 1 , wherein the first reflective electrode comprises a first plurality of layers and the second reflective electrode comprises a second plurality of layers.

6. The light-emitting layer structure of claim 5 wherein the first plurality of layers and the second plurality of layers have a respective first top layer and second top layer with a thickness between 0.5 nm and 30 nm.

7. The light-emitting layer structure of claim 5 , wherein each layer of the first plurality of layers and each layer of the second plurality of layers comprises at least one of silver, aluminum, chromium, tin, titanium, palladium, gallium, platinum, tungsten, tantalum, zirconium, a conductive non-metallic material, and an interference film layer.

8. A light-emitting layer structure comprising:

a first optical cavity comprising:

a first reflective electrode;

a first partially transparent electrode; and

a first emissive layer (EML) disposed between the first reflective electrode and the first partially transparent electrode, wherein the first EML is configured to emit light having a first wavelength;

wherein the first reflective electrode is configured to introduce a first phase shift, depending on the first wavelength, on reflection of light emitted by the first EML; and

a second optical cavity comprising:

a second reflective electrode;

a second partially transparent electrode; and

a second EML disposed between the second reflective electrode and the second partially transparent electrode, wherein the second EML is configured to emit light having a second wavelength;

wherein the second reflective electrode is configured to introduce a second phase shift, depending on the second wavelength, on reflection of light emitted by the second EML, and the first phase shift is different from the second phase shift; and

wherein a first surface of the first reflective electrode has a first pattern to introduce the first phase shift corresponding to the first wavelength and a second surface of the second reflective electrode has a second pattern to introduce the second phase shift corresponding to the second wavelength, and the first pattern has a first size, a first separation, and a first depth corresponding to the first phase shift.

9. A light-emitting layer structure comprising:

a first optical cavity comprising:

a first reflective electrode;

a first partially transparent electrode; and

a first emissive layer (EML) disposed between the first reflective electrode and the first partially transparent electrode, wherein the first EML is configured to emit light having a first wavelength;

wherein the first reflective electrode is configured to introduce a first phase shift, depending on the first wavelength, on reflection of light emitted by the first EML; and

a second optical cavity comprising:

a second reflective electrode;

a second partially transparent electrode; and

a second EML disposed between the second reflective electrode and the second partially transparent electrode, wherein the second EML is configured to emit light having a second wavelength;

wherein the second reflective electrode is configured to introduce a second phase shift, depending on the second wavelength, on reflection of light emitted by the second EML, and the first phase shift is different from the second phase shift; and

wherein a first surface of the first reflective electrode has a first pattern to introduce the first phase shift corresponding to the first wavelength and a second surface of the second reflective electrode has a second pattern to introduce the second phase shift corresponding to the second wavelength, and the second pattern has a second size, a second separation, and a second depth corresponding to the second phase shift.