Method of controlling memory device including pluralities of memory cells

1. A method of controlling a memory device including a first plurality of memory cells, a first word line electrically connected to gates of the first plurality of memory cells, a second plurality of memory cells and a second word line electrically connected to gates of the second plurality of memory cells, data in the first plurality of memory cells and data in the second plurality of memory cells capable of being read in parallel, the method comprising:

transmitting to the memory device a first instruction instructing parallel reads from the first plurality of memory cells and the second plurality of memory cells,

transmitting to the memory device a second instruction for reading data from the first plurality of memory cells when an error of first read data transmitted from the memory device in response to the first instruction is uncorrectable,

performing error correction on second read data transmitted by the memory device in response to the second instruction, and

transmitting to a host device the first read data or the first read data with an error corrected when correction of an error of the first read data succeeds.

2. The method according to claim 1 , wherein the second instruction is transmitted after transmission of the first instruction.

3. The method according to claim 2 , wherein:

the first instruction corresponds to a first request sent from the host device, and

the method further comprises transmitting to the memory device a third instruction for reading data from the second plurality of memory cells after transmission of the second instruction before receiving from the host device a second request following the first request.

4. The method according to claim 3 , wherein:

the memory device further includes a third plurality of memory cells, a third word line electrically connected to gates of the third plurality of memory cells, a fourth plurality of memory cells and a fourth word line electrically connected to gates of the fourth plurality of memory cells,

one of the first plurality of memory cells and one of the third plurality of memory cells are electrically connected in series,

one of the second plurality of memory cells and one of the fourth plurality of memory cells are electrically connected in series, and

the method further comprises transmitting to the memory device a third instruction which instructs parallel writes into the third plurality of memory cells and the fourth plurality of memory cells.

5. The method according to claim 4 , further comprising transmitting to the memory device a fourth instruction for reading data from the second plurality of memory cells after transmission of the second instruction.

6. The method according to claim 4 , further comprising transmitting to the memory device a fourth instruction for writing after transmission of the second instruction.

7. The method according to claim 6 , wherein:

the memory device further includes a fifth plurality of memory cells and a sixth plurality of memory cells, and

the fourth instruction includes one or both of an instruction for writing into the fifth plurality of memory cells, and an instruction for writing into the sixth plurality of memory cells.

8. The method according to claim 7 , wherein the fourth instruction includes an instruction for writing first data read from the first plurality of memory cells by the second instruction into the fifth plurality of memory cells.

9. The method according to claim 8 , further comprising generating second data stored in the second plurality of memory cells using the first data, and instructing a write of second data into the sixth plurality of memory cells.

10. The method according to claim 9 , wherein:

the memory device further includes a seventh plurality of memory cells, and an eighth plurality of memory cells, and

the method further comprises transmitting to the memory device a fifth instruction including an instruction for writing into the seventh plurality of memory cells and an instruction for writing into the eighth plurality of memory cells after reception of the first request.

11. The method according to claim 1 , wherein:

the memory device further includes a first switch between a first driver and the first word line, and a second switch between the first driver and the second word line,

the first instruction instructs reads from the first and second plurality of memory cells with the first and second switches on, and

the second instruction instructs a read from the first plurality of memory cells with the second switch off.

12. The method according to claim 1 , further comprising specifying a first address corresponding to the first plurality of memory cells and specifying a second address corresponding to the second plurality of memory cells based on logical address specified by a read request sent from the host device, wherein the first instruction specifies the first address and the second address.

13. The method according to claim 1 , further comprising restoring, when the error correction on the second read data succeeds, data which should be read from the second plurality of memory cells based on the second read data.

14. The method according to claim 13 , further comprising transmitting to the host device the restored data when correction of an error of the second read data succeeds.

15. The method according to claim 13 , further comprising transmitting to the memory device a third instruction for reading from the second plurality of memory cells when correction of an error of the second read data fails.

16. The method according to claim 15 , further comprising restoring, when correction of an error of third read data transmitted by the memory device in response to the third instruction succeeds, data which should be read from the first plurality of memory cells based on the third read data.