IP Library Granted Patent US 10,930,832
Granted Patent B2
US 10,930,832 · App. 16/519,546 · Granted Feb 23, 2021

Method for manufacturing semiconductor light emitting device

Inventors: Soo Kun Jeon (Gyeonggi-do, KR); Seung Ho Baek (Gyeonggi-do, KR); Da Rae Lee (Gyeonggi-do, KR); Bong Hwan Kim (Gyeonggi-do, KR); Dong So Jung (Gyeonggi-do, KR)
Assignee: SEMICON LIGHT CO., LTD.
H01L33/62H01L21/67144H01L21/67271H01L22/12H01L24/19H01L24/96H01L33/0095H01L33/505H01L33/54H01L33/60H01L33/20H01L2933/005H01L2933/0041H01L2933/0066
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Quick Facts
Patent No.
US 10,930,832
App. No.
16/519,546
Granted
Feb 23, 2021
Kind
B2
Abstract

Disclosed is a method for manufacturing a semiconductor light emitting device, the method including: providing a mask having a plurality of openings on a base; placing semiconductor light emitting chips on exposed portions of the base through the openings, respectively, by a device carrier which recognizes a shape of the mask and calibrates position for a semiconductor light emitting chip to be seated; and supplying an encapsulant to each of the openings, with the mask serving as a dam.

Claims (19)

1. A method for manufacturing a semiconductor light emitting device, the method comprising:

providing onto a base a dam with openings, and semiconductor light emitting chips lying on exposed portions of the base through the openings, with cutting grooves formed on the dam around the openings;

supplying an encapsulant to each of the openings to cover the semiconductor light emitting chip; and

obtaining an individual separated semiconductor light emitting device by cutting the dam around the openings, along the cutting grooves, and separating the semiconductor light emitting device from the base, with the separate semiconductor light emitting device comprising the semiconductor light emitting chip, the encapsulant and a cut dam portion.

2. The method according to claim 1 , wherein providing onto a base a dam and semiconductor light emitting chips includes providing onto a base a dam with a plurality of openings formed therein and cutting grooves formed on a top face of the dam between the openings.

3. The method according to claim 1 , wherein obtaining an individual separated semiconductor light emitting device comprises at least one of:

sawing or scribing the dam along the cutting grooves; and

breaking the dam along the cutting grooves.

4. The method according to claim 1 , further comprising:

prior to providing onto a base a dam and semiconductor light emitting chips, forming a phosphor layer on a surface of the semiconductor light emitting chips.

5. The method according to claim 1 , wherein at least the dam has a metal surface.

6. The method according to claim 1 , wherein providing onto a base a dam and semiconductor light emitting chips comprises

placing the semiconductor light emitting chips on exposed portions of the base through the openings using a device carrier configured to recognize a shape of a mask and calibrate positions and angles of the semiconductor light emitting chips to be placed.

7. The method according to claim 1 , wherein providing onto a base a dam and semiconductor light emitting chips includes arranging flip chips with two electrodes as the semiconductor light emitting chips in such a manner that the two electrodes face the base without being covered with the encapsulant.

8. The method according to claim 7 , wherein obtaining an individual separated semiconductor light emitting device comprised of the semiconductor light emitting chip, the encapsulant and the cut dam portion includes arranging a bottom face of the cut dam portion in a direction where the two electrodes are exposed, and bonding exposed sides of the two electrodes as well as the bottom face of the cut dam portion, resulting in one surface connecting the exposed sides of the two electrodes, faces of the encapsulant around the two electrodes, and the bottom face of the cut dam portion together in a line.

9. A method for manufacturing a semiconductor light emitting device, the method comprising:

providing onto a base a dam with openings, and semiconductor light emitting chips lying on exposed portions of the base through the openings, with cutting grooves formed on the dam around the openings;

supplying an encapsulant to each of the openings to cover the semiconductor light emitting chip; and

obtaining an individual separated semiconductor light emitting device by separating from the base an assembly of the semiconductor light emitting chip, the encapsulant and the dam, and cutting, for the assembly, the dam around the openings, along the cutting grooves, with the separate semiconductor light emitting device comprising the semiconductor light emitting chip, the encapsulant and a cut dam portion.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 7, 2023
From: SEMICON LIGHT CO., LTD.
To: LUMENS CO., LTD.
Reel/Frame 065788/0381 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 23, 2019
From: JEON, SOO KUN; BAEK, SEUNG HO; LEE, DA RAE; KIM, BONG HWAN; JUNG, DONG SO
To: SEMICON LIGHT CO., LTD.
Reel/Frame 049834/0455 →
Priority Claims (7)
KR 10-2014-0121190 · Sep 12, 2014 · national
KR 10-2014-0121191 · Sep 12, 2014 · national
KR 10-2014-0121193 · Sep 12, 2014 · national
KR 10-2014-0128478 · Sep 25, 2014 · national
KR 10-2014-0128481 · Sep 25, 2014 · national
KR 10-2014-0144087 · Oct 23, 2014 · national
KR 10-2014-0144088 · Oct 23, 2014 · national
Continuity (2)
Division 15510585
Related Publication 20190378965A1 · Dec 12, 2019