Method of forming titanium nitride films with (200) crystallographic texture

1. A substrate processing method, comprising:

depositing by vapor phase deposition at least one monolayer of a first titanium nitride film on a substrate;

treating the first titanium nitride film with plasma excited hydrogen-containing gas, wherein the first titanium nitride film is polycrystalline and the treating increases (200) crystallographic texture of the first titanium nitride film;

depositing by vapor phase deposition at least one monolayer of a second titanium nitride film on the treated at least one monolayer of the first titanium nitride film;

treating the at least one monolayer of the second titanium nitride film with plasma excited hydrogen-containing gas; and

performing atomic layer etching to thin a titanium nitride material containing the treated first and second titanium nitride films, wherein the thinned titanium nitride material has predominantly (200) crystallographic texture.

2. The method of claim 1 , wherein a titanium nitride material containing the first and second titanium nitride films has predominantly (200) crystallographic texture.

3. The method of claim 1 , further comprising sequentially repeating at least once the steps of depositing by vapor phase deposition at least one monolayer of the second titanium nitride film, and treating the at least one monolayer of the second titanium nitride film with plasma excited hydrogen-containing gas.

4. The method of claim 1 , wherein a titanium nitride material containing the first and second titanium nitride films has predominantly (200) crystallographic texture.

5. The method of claim 1 , wherein the depositing by vapor phase deposition at least one monolayer of the first titanium nitride film includes performing a first plurality of cycles of atomic layer deposition.

6. The method of claim 5 , wherein the first plurality of cycles of atomic layer deposition includes alternating exposures of TiCl 4 gas and NH 3 gas.

7. The method of claim 1 , wherein the depositing by vapor phase deposition at least one monolayer of the second titanium nitride film includes performing a second plurality of cycles of atomic layer deposition.

8. The method of claim 7 , wherein the second plurality of cycles of atomic layer deposition includes alternating exposures of TiCl 4 gas and NH 3 gas.

9. The method of claim 1 , wherein the plasma excited hydrogen-containing gas is formed using a microwave plasma source, an inductively coupled plasma (ICP) source, or a capacitively coupled plasma (CCP) source.

10. The method of claim 1 , wherein the treating steps positively shift the threshold voltage of a titanium nitride material containing the first and second titanium nitride films.

11. The method of claim 1 , wherein the hydrogen-containing gas is selected from the group consisting of H 2 , NH 3 , N 2 H 4 , H radicals, and a combination thereof.

12. A substrate processing method, comprising:

depositing by vapor phase deposition at least one monolayer of a first titanium nitride film on a substrate;

treating the first titanium nitride film with plasma excited hydrogen-containing gas, wherein the first titanium nitride film is polycrystalline and the treating increases (200) crystallographic texture of the first titanium nitride film;

depositing by vapor phase deposition at least one monolayer of a second titanium nitride film on the treated at least one monolayer of the first titanium nitride film;

treating the at least one monolayer of the second titanium nitride film with plasma excited hydrogen-containing gas; and

performing etching to thin a titanium nitride material containing the treated first and second titanium nitride films, wherein the thinned titanium nitride material has predominantly (200) crystallographic texture.

13. The method of claim 12 , wherein the etching is performed using gas mixture of CHF 3 and Ar, or a gas mixture of Cl 2 and Ar.

14. The method of claim 12 , wherein the hydrogen-containing gas is selected from the group consisting of H 2 , NH 3 , N 2 H 4 , H radicals, and a combination thereof.

15. A substrate processing method, comprising:

depositing by atomic layer deposition at least one monolayer of a first titanium nitride film on a substrate;

treating the first titanium nitride film with plasma excited hydrogen-containing gas formed using a microwave plasma source, wherein the first titanium nitride film is polycrystalline and the treating increases (200) crystallographic texture of the first titanium nitride film;

depositing by atomic layer deposition at least one monolayer of a second titanium nitride film on the treated at least one monolayer of the first titanium nitride film; and

treating the at least one monolayer of the second titanium nitride film with plasma excited hydrogen-containing gas formed using the microwave plasma source, wherein the (200) crystallographic texture of treated first titanium nitride film aids in forming the second titanium nitride film also with predominantly (200) crystallographic texture, and a titanium nitride material containing the treated first and second titanium nitride films has predominantly (200) crystallographic texture; and

performing etching to thin a titanium nitride material containing the treated first and second titanium nitride films, wherein the thinned titanium nitride material has predominantly (200) crystallographic texture.

16. The method of claim 15 , wherein the depositing steps include a plurality of cycles of atomic layer deposition that include alternating exposures of TiCl 4 gas and NH 3 gas.

17. The method of claim 15 , wherein the etching is performed using gas mixture of CHF 3 and Ar, or a gas mixture of Cl 2 and Ar.

18. The method of claim 15 , wherein the hydrogen-containing gas is selected from the group consisting of H 2 , NH 3 , N 2 H 4 , H radicals, and a combination thereof.