Integrated fan-out structure and method of forming
Semiconductor devices and methods of forming are provided. A molding compound extends along sidewalls of a first die and a second die. A redistribution layer is formed over the first die, the second die, and the molding compound. The redistribution layer includes a conductor overlying a gap between the first die and the second die. The conductor is routed at a first angle over an edge of the first die. The first angle is measured with respect to a straight line that extends along a shortest between the first die and the second die, and the first angle is greater than 0.
1. A device, comprising:
a first die;
a second die;
a molding material extending between the first die and the second die; and
a redistribution layer overlying the first die and the second die, the redistribution layer including a conductor continuously extending, in a plan view, from a sidewall of the first die that is closest to the second die to a sidewall of the second die that is closest to the first die, the conductor being routed at a first angle over the sidewall of the first die, the first angle being measured in a plan view and with respect to a shortest line between the first die and the second die, and the first angle being greater than 0.
2. The device according to claim 1 , wherein:
the first die comprises a first dielectric layer on a first substrate, an edge of the first dielectric layer being offset from an edge of the first substrate; and
the second die comprises a second dielectric layer on a second substrate, an edge of the second dielectric layer being offset from an edge of the second substrate;
wherein the conductor comprises a first turning point over the first dielectric layer, the first turning point being located where the conductor is first routed at the first angle.
3. The device according to claim 2 , wherein the conductor is routed at the first angle over the edge of the second dielectric layer, and the first angle is greater than about 15 degrees.
4. The device according to claim 3 , wherein the conductor comprises a second turning point over the second dielectric layer, the second turning point located where the conductor is first routed away from the first angle.
5. The device according to claim 1 , wherein the conductor comprises:
a first segment partially overlying over the first die and routed at the first angle;
a second segment connected to the first segment routed at a second angle; and
a third segment connected to the second segment, partially overlying the second die, and routed at a third angle, the third angle being greater than 0;
wherein the second angle and the third angle are measured in a plan view and with respect to a shortest line between the first die and the second die.
6. The device according to claim 1 , wherein the conductor comprises:
a first segment partially overlying the first die and routed at the first angle; and
a second segment connected to the first segment, partially overlying the second die, and routed at a second angle;
wherein the first segment is routed at an acute angle with respect to an edge of the first die that faces the second die, and the second angle is an acute angle with respect to an edge of the second die that faces the first die.
7. The device according to claim 6 , wherein the first segment forms a perpendicular angle to the second segment, the perpendicular angle being located over the molding material that extends between the first die and the second die.
8. The device according to claim 1 , wherein the first angle is about 45 degrees.
9. A device, comprising:
a first die;
a second die positioned next to the first die;
a first dielectric layer overlying the first die and the second die;
a conductor extending in the first dielectric layer, wherein the conductor is continuous, in a plan view, between a sidewall of the first die and a sidewall of the second die, and wherein the conductor is routed at a first angle over an edge of the first die, the first angle being measured in the plan view with respect to the sidewall of the first die, and the first angle being non-perpendicular.
10. The device according to claim 9 , wherein the conductor extends in a straight line between the first die and the second die.
11. The device according to claim 9 , wherein the conductor is first routed to the first angle at a first turning point, the first turning point being located over the first die and offset from the sidewall of the first die.
12. The device according to claim 9 , wherein the conductor is routed at a second angle over an edge of the second die, the second angle being measured in a plan view with respect to the sidewall of the second die, and the second angle being non-perpendicular.
13. The device according to claim 12 , wherein the conductor is first routed away from the second angle at a second turning point, the second turning point being located over the second die and offset from the sidewall of the second die.
14. The device according to claim 13 , wherein the conductor is first routed away from the first angle at a third turning point, the third turning point being located over a line that extends along a shortest distance between the sidewall of the first die and the sidewall of the second die.
15. A semiconductor device, comprising:
a first die;
a second die next to the first die;
a molding material extending along a sidewall of the first die and a sidewall of the second die, wherein a first portion of the molding material extends between the first die and the second die; and
a redistribution structure overlying the first die and the second die, the redistribution structure comprising a conductor that overlies the first portion of the molding material, wherein the conductor is laterally routed over the sidewall of the first die at a first angle, the first angle being measured in a plan view with respect to the sidewall of the first die, and the first angle being an acute angle.
16. The semiconductor device according to claim 15 , wherein the sidewall of the first die faces the second die.
17. The semiconductor device according to claim 15 , wherein the conductor is continuous in a plan view between the sidewall of the first die and a sidewall of the second die.
18. The semiconductor device according to claim 15 , further comprising a through via extending through the molding material.
19. The semiconductor device according to claim 15 , wherein the conductor is laterally routed over a sidewall of the second die at a second angle, the second angle is measured with respect to a shortest line between the first die and the second die, and the second angle is an acute angle.
20. The semiconductor device according to claim 15 , wherein the first die comprises a first substrate and a first dielectric layer, a sidewall of the first dielectric layer is offset from a sidewall of the first substrate, and the conductor is laterally routed over a sidewall of the first dielectric layer in a manner that is non-perpendicular to the sidewall of the first dielectric layer.