Semiconductor defect inspection apparatus and semiconductor defect inspection method

1. A semiconductor defect inspection apparatus comprising:

a stage for holding an inspection target object;

an X-ray irradiator configured to irradiate the stage with X-rays;

a transmission X-ray detector configured to detect transmitted X-rays that pass through the inspection target object;

a fluorescent X-ray detector configured to detect fluorescent X-rays which are emitted from the inspection target object; and

a defect detector configured to detect a first defect by analysis of a transmission X-ray image which is obtained by performing photoelectric conversion of the transmitted X-rays and a second defect by analyzing a spectrum of the fluorescent X-rays,

wherein the second defect has an area which is a half or more than a half of an area of a region that is irradiated with the X-rays, and

wherein a brightness difference between a first pixel, corresponding to the second defect, in the transmission X-ray image of the inspection target object and a second pixel in a transmission X-ray image of a reference object is less than a preset threshold, the first and second pixels being in a same position.

2. The semiconductor defect inspection apparatus according to claim 1 , wherein

the fluorescent X-ray detector is disposed between the stage and the X-ray irradiator.

3. The semiconductor defect inspection apparatus according to claim 1 , further comprising:

a light collecting mirror disposed between the stage and the X-ray irradiator; and

an X-ray focusing device disposed between the stage and the transmission X-ray detector.

4. The semiconductor defect inspection apparatus according to claim 1 , wherein

the defect detector is further configured to detect an abnormality in the X-ray irradiator based on a mean brightness value in the transmission X-ray image and fluorescent X-ray intensity at predetermined energy in a fluorescent X-ray spectrum.

5. A semiconductor defect inspection method, comprising:

irradiating an inspection target object with X-rays;

detecting the X-rays that pass through the inspection target object;

detecting fluorescent X-rays generated from the inspection target object;

detecting whether a first defect is present by an analysis of a transmission X-ray image obtained by performing photoelectric conversion of the transmitted X-rays;

detecting whether a second defect is present by a spectrum analysis of the fluorescent X-rays; and

determining that a defect is present in the inspection target object in response to detecting a presence of at least one of the first defect or the second defect,

wherein the first defect has an area which is less than a half of an area of a region that is irradiated with the X-rays, and

wherein detecting whether a first defect is present further comprises:

determining whether a brightness difference between a first pixel, corresponding to the first defect, in the transmission X-ray image of the inspection target object and a second pixel in a transmission X-ray image of a reference object is greater than a preset threshold, the first and second pixels being in a same position.

6. The semiconductor defect inspection method according to claim 5 , further comprising:

detecting an abnormality in an X-ray irradiator irradiating the inspection target object with the X-rays based on a mean brightness value in the transmission X-ray image and fluorescent X-ray intensity at predetermined energy in a fluorescent X-ray spectrum.

7. The semiconductor defect inspection method of claim 5 , wherein detecting whether a second defect is present further comprises:

determining whether a brightness difference between a first pixel, corresponding to the second defect, in the transmission X-ray image of the inspection target object and a second pixel in a transmission X-ray image of a reference object is less than a preset threshold, the first and second pixels being in a same position.

8. The semiconductor defect inspection method of claim 5 , wherein the second defect has an area which is a half or more than a half of an area of a region that is irradiated with the X-rays.

9. A system comprising:

one or more processors programmed with machine-readable instructions to carry out control to:

irradiate an inspection target object placed on a stage with X-rays;

detect the X-rays which passed through the inspection target object are detected as transmitted X-rays;

detect fluorescent X-rays generated from the inspection target object;

detect whether a first defect is present by an analysis of a transmission X-ray image obtained by performing photoelectric conversion of the transmitted X-rays;

detect whether a second defect is present by a spectrum analysis of the fluorescent X-rays; and

determine that a defect is present in the inspection target object in response to detecting a presence of at least one of the first defect or the second defect,

wherein the second defect has an area which is a half or more than a half of an area of a region that is irradiated with the X-rays,

wherein a brightness difference between a first pixel, corresponding to the second defect, in the transmission X-ray image of the inspection target object and a second pixel in a transmission X-ray image of a reference object is less than a preset threshold, the first and second pixels being in a same position,

wherein the first defect has an area which is less than a half of an area of a region that is irradiated with the X-rays, and

wherein a brightness difference between a first pixel, corresponding to the first defect, in the transmission X-ray image of the inspection target object and a second pixel in a transmission X-ray image of a reference object is greater than a preset threshold, the first and second pixels being in a same position.