Shielding member and apparatus for single crystal growth
A shielding member placed between a SiC source loading portion and a crystal installation portion in an apparatus for single crystal growth, including a crystal growth container including the loading portion which accommodates a SiC source in an inner bottom portion; a crystal installation portion facing the loading portion, and a heating unit configured to heat the crystal growth container. The device grows a single crystal of the SiC source on a crystal installed on the crystal installation portion by sublimating the SiC source from the loading portion. The shielding member includes a plurality of shielding plates, wherein each area of the plurality of shielding plates is 40% or less of a base area of the crystal growth container. When the SiC source loading portion is filled with a SiC source, a shielding ratio provided by a projection surface of the plurality of shielding plates is 0.5 or more.
1. A shielding member, which is placed between a SiC source loading portion and a crystal installation portion in an apparatus for single crystal growth,
wherein
the apparatus for single crystal growth includes
a crystal growth container including
the SiC source loading portion which accommodates a SiC source in an inner bottom portion, and
the crystal installation portion facing the SiC source loading portion, and
a heating unit that is configured to heat the crystal growth container, and wherein
the apparatus for single crystal growth grows a single crystal of the SiC source on a crystal installed on the crystal installation portion by sublimating the SiC source from the SiC source loading portion,
the shielding member comprising:
a plurality of shielding plates, wherein
the shielding plates are arranged on a same plane,
each area of the plurality of shielding plates is 40% or less of a base area of the crystal growth container, and wherein,
in a case where the SiC source loading portion is filled with a SiC source, a shielding ratio provided by a projection surface of the plurality of shielding plates, which is projected on an internal circle of the SiC source loading portion at SiC source surface, is 0.5 or more and is equal to or smaller than 0.9, and
wherein the shielding member further includes
a connection portion and
a support which extends from an inner bottom surface of the SiC source loading portion,
wherein the shielding plates are integrated by the connecting portion, and the integrated shielding plates are supported by the support.
2. An apparatus for single crystal growth comprising:
a first shielding member according to claim 1 ,
a crystal growth container including
a SiC source loading portion which accommodates a SiC source in an inner bottom portion, and
a crystal installation portion which faces the SiC source loading portion; and
a heating unit that is configured to heat the crystal growth container,
wherein the shielding member is placed between the SiC source loading portion and the crystal installation portion, and
wherein
a single crystal of the SiC source is grown on a crystal, which is disposed on the crystal installation portion, by sublimating the SiC source from the SiC source loading portion.
3. The shielding member according to claim 1 ,
wherein the plurality of shielding plates are connected to each other.
4. The apparatus according to claim 2 ,
which further comprises at least one shielding plate positioned at a height which is different from a height of the shielding plates of the first shielding member.
5. The shielding member according to claim 1 ,
wherein all of the shielding plates have a circular shape.
6. The shielding member according to claim 1 ,
wherein all of the shielding plates have a hexagonal shape.
7. The shielding member according to claim 1 ,
wherein all of the shielding plates have a fan shape.
8. The shielding member according to claim 1 ,
wherein the shielding ratio provided by the projection surface is equal to or greater than 0.6.
9. The shielding member according to claim 1 ,
wherein the shielding ratio provided by the projection surface is equal to or greater than 0.7.
10. The shielding member according to claim 1 ,
wherein each projection surface area of the shielding plates is 30% or less of an area of an inner bottom surface of the crystal growth container.
11. The shielding member according to claim 1 ,
wherein each projection surface area of the shielding plates is 20% or less of an area of an inner bottom surface of the crystal growth container.
12. The shielding member according to claim 1 ,
wherein the shielding plates are arranged in a hexagonal close-packed structure.
13. The shielding member according to claim 1 ,
wherein, in a plan view, the shielding plates are placed at regular intervals, such that the shielding plates are placed at each corner and the center of a regular hexagon.
14. The shielding member according to claim 1 ,
wherein, in a plan view, the shielding plates are placed at regular intervals, such that the shielding plates are placed at each corner of an equilateral triangle.
15. The shielding member according to claim 1 ,
wherein the shielding plates are placed with a two-stage configuration.
16. The shielding member according to claim 1 ,
wherein the shielding plates consist of flat plates which are horizontally arranged at a same height.
17. The shielding member according to claim 1 ,
wherein the shielding plates consist of flat plates including no opening therein.
18. The shielding member according to claim 1 ,
wherein a peripheral edge of each of the shielding plates is offset from an inner surface of the crystal growth container.
19. The shielding member according to claim 1 ,
wherein the crystal installation portion has a circular shape having a diameter of 6 inches.
20. The apparatus for single crystal growth according to claim 4 ,
wherein the crystal installation portion has a circular shape having a diameter of 6 inches.