Method and apparatus to improve write bandwidth of a block-based multi-level cell nonvolatile memory
Write performance of a block-based multi-level cell non-volatile memory is increased through the use of an internal copy of blocks with a high validity. Write (program) performance for sequential workloads is increased by moving the data in blocks with a high validity within a NAND device directly from the portion of the NAND device configured as single level cell NAND to the portion of the NAND device configured as multi-level cell NAND.
1. An apparatus comprising:
a non-volatile memory die communicatively coupled to an off-die non-volatile memory controller, the non-volatile memory die comprising:
an on-die memory controller;
a plurality of first portions of memory, each first portion configured in a single bit per cell mode;
a second portion of memory configured in a multi-bit per cell mode, the on-die memory controller to internally move valid pages and invalid pages directly from the plurality of first portions of memory to the second portion of memory in response to a command received from the off-die non-volatile memory controller if validity of data in each of the plurality of first portions of memory is greater than a validity threshold; and
a volatile memory, the volatile memory to temporarily store data to be moved externally from the first portion to the second portion of memory if validity of data in each of the plurality of first portions of memory is less than the validity threshold instead of internally moving data directly in the non-volatile memory die, wherein the apparatus is a solid-state drive, the solid-state drive comprising a solid-state drive controller, the solid-state drive controller comprising the off-die non-volatile memory controller, and an off-die volatile memory controller.
2. The apparatus of claim 1 , wherein the non-volatile memory is NAND.
3. The apparatus of claim 2 , wherein the second portion of memory is configured for at least two bits per cell and the plurality of first portions of memory is two.
4. The apparatus of claim 2 , wherein the second portion of memory is a Quad-Level Cell (QLC) block configured for four bits per cell and the plurality of first portions of memory is four Single-Level Cell (SLC) blocks, the on-die memory controller to internally move entire content of the four SLC blocks into the QLC block, one page at a time.
5. The apparatus of claim 1 , wherein the validity threshold is at least eighty percent.
6. A method comprising:
storing data in a plurality of first portions of an on-die non-volatile memory, each first portion configured in a single bit per cell mode;
in response to a command received from an off-die non-volatile memory controller, if validity of data in each of the plurality of first portions is greater than a validity threshold, internally moving, by an on-die memory controller, valid pages and invalid pages directly from the plurality of first portions to a second portion of memory of the on-die non-volatile memory, the second portion of memory configured in a multi-bit per cell mode; and
temporarily storing, in a volatile memory, data to be moved externally from the first portion to the second portion of memory if validity of data in each of the plurality of first portions is less than the validity threshold instead of internally moving data directly in the on-die non-volatile memory.
7. The method of claim 6 , wherein the on-die non-volatile memory is NAND.
8. The method of claim 7 , wherein the second portion of memory is configured for at least two bits per cell and the plurality of first portions is two.
9. The method of claim 7 , wherein the second portion of memory is a Quad-Level Cell (QLC) block configured for four bits per cell and the plurality of first portions is four Single-Level Cell (SLC) blocks, the on-die memory controller to internally move entire content of the four SLC blocks into the QLC block, one page at a time.
10. The method of claim 6 , wherein the validity threshold is at least eighty percent.
11. The method of claim 6 , wherein the on-die memory controller, the off-die non-volatile memory controller, the plurality of first portions and the second portion of memory are in a solid-state drive.
12. A system comprising: an off-die non-volatile memory controller; and
a non-volatile memory die communicatively coupled to the off-die non-volatile memory controller, the non-volatile memory die comprising:
an on-die memory controller;
a plurality of first portions of memory, each first portion configured in a single bit per cell mode; and
a second portion of memory configured in a multi-bit per cell mode, the on-die memory controller to internally move valid pages and invalid pages directly from the plurality of first portions of memory to the second portion of memory in response to a command received from the off-die non-volatile memory controller if validity of data in each of the plurality of first portions of memory is greater than a validity threshold;
a volatile memory, the volatile memory to temporarily store data to be moved externally from the first portion to the second portion of memory if validity of data in each of the plurality of first portions of memory is less than the validity threshold instead of internally moving data directly in the non-volatile memory die; and
a display communicatively coupled to a processor to display data stored in the non-volatile memory die.
13. The system of claim 12 , wherein the non-volatile memory is NAND.
14. The system of claim 13 , wherein the second portion of memory is configured for at least two bits per cell and the plurality of first portions of memory is two.
15. The system of claim 13 , wherein the second portion of memory is a Quad-Level Cell (QLC) block configured for four bits per cell and the plurality of first portions of memory is four Single-Level Cell (SLC) blocks, the on-die memory controller to internally move entire content of the four SLC blocks into the QLC block, one page at a time.
16. The system of claim 12 , wherein the validity threshold is at least eighty percent.