Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films
Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein: R 1 Si(NR 2 R 3 )(NR 4 R 5 )OR 6 I where R 1 is selected from hydrogen, a C 1 to C 10 linear alkyl group, a C 3 to C 10 branched alkyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 alkenyl group, a C 3 to C 10 alkynyl group, a C 4 to C 10 aromatic hydrocarbon group; R 2 , R 3 , R 4 , and R 5 are each independently selected from hydrogen, a C 4 to C 10 branched alkyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 alkenyl group, a C 3 to C 10 alkynyl group, and a C 4 to C 10 aromatic hydrocarbon group; R 6 is selected from a C 1 to C 10 linear alkyl group, a C 3 to C 10 branched alkyl group, a C 3 to C 10 cyclic alkyl group, a C 3 to C 10 alkenyl group, a C 2 to C 10 alkynyl group, and a C 4 to C 10 aromatic hydrocarbon group.
1. A bisaminoalkoxysilane compound having a Formula I:
R 1 Si(NR 2 R 3 )(NR 4 R 5 )OR 6 I
wherein R 1 is a methyl group; R 2 and R 4 are each hydrogen atoms; R 3 and R 5 are each selected from the group consisting of tert-butyl and tert-pentyl; and R 6 is selected from a C 1 to C 3 linear alkyl group and a C 3 to C 5 branched alkyl group.
2. The bisaminoalkoxysilane compound of claim 1 wherein the compound is at least one selected from the group consisting of bis(tert-butylamino)methoxymethylsilane, bis(tert-butylamino)ethoxymethylsilane, and bis(tert-butylamino)isopropoxymethylsilane.
3. A method for forming a silicon-containing film on at least one surface of a substrate comprising:
providing the substrate in a reactor; and
forming the silicon-containing film on the at least one surface by a deposition process selected from the group consisting of atomic layer deposition (ALD), plasma enhanced ALD (PEALD), and plasma enhanced cyclic CVD (PECCVD) using at least one precursor comprising a bisaminoalkoxysilane having Formula I:
R 1 Si(NR 2 R 3 )(NR 4 R 5 )OR 6 I
where R 1 is a methyl group; R 2 and R 4 are each hydrogen atoms; R 3 and R 5 are each selected from the group consisting of tert-butyl and tert-pentyl; and R 6 is selected from a C 1 to C 3 linear alkyl group and a C 3 to C 5 branched alkyl group.
4. A silicon-containing film formed using the compound of claim 1 .
5. The silicon-containing film formed according to the method of claim 3 .