Nitride phosphor and light emitting device and backlight module employing the nitride phosphor
A nitride phosphor, and a light emitting device and a backlight module employing the nitride phosphor. The nitride phosphor has the formula (Sr 1-x , Ba x )LiAl 3 N 4-n O n :Eu 3+ y , Eu 2+ z with 0<x<1 and y/z>0.1. The light emitting device includes a light emitting diode configured to emit a first light and the nitride phosphor configured to convert a portion of the first light to a second light. A backlight module includes a printed circuit board and a plurality of the light emitting devices.
1. A nitride phosphor having a formula of (Sr 1-x , Ba x )LiAl 3 N 4-n O n :Eu 3+ y , Eu 2+ z and having a crystal structure same as a crystal structure of SrLiAl 3 N 4 :Eu,
wherein 0<x<1 and y/z>0.1.
2. The nitride phosphor of claim 1 , wherein 0.01<n<0.5.
3. The nitride phosphor of claim 1 , wherein 0.01<x<0.6.
4. The nitride phosphor of claim 1 , wherein the nitride phosphor emits light having a peak wavelength in a range from about 610 nm to about 710 nm upon being irradiated by light having a peak wavelength in a range from about 400 nm to about 500 nm.
5. A light emitting device, comprising:
a light emitting diode configured to emit a first light; and
a nitride phosphor configured to convert a portion of the first light to a second light, wherein the nitride phosphor has the formula of (Sr 1-x , Ba x )LiAl 3 N 4-n O n , Eu 3+ y , Eu 2+ z and has a crystal structure same as a crystal structure of SrLiAl 3 N 4 :Eu, wherein 0<x<1 and y/z>0.1.
6. The light emitting device of claim 5 , wherein 0.01<n<0.5.
7. The light emitting device of claim 5 , wherein 0.01<x<0.6.
8. The light emitting device of claim 5 , wherein a peak wavelength of the first light is in a range from about 400 nm to about 500 nm, and a peak wavelength of the second light is in range from about 610 nm to about 710 nm.
9. The light emitting device of claim 8 , further comprising a wavelength conversion material, wherein a composition of the wavelength conversion material is different from a composition of the nitride phosphor.
10. The light emitting device of claim 9 , wherein the wavelength conversion material includes phosphors, quantum dots, or combinations thereof.
11. The light emitting device of claim 9 , wherein the wavelength conversion material includes green phosphors, green quantum dots, or combinations thereof.
12. The light emitting device of claim 9 , wherein the wavelength conversion material includes a Mn 4+ -activated fluoride phosphor, Eu 2+ -activated CaAlSiN 3 , Eu 2+ -activated (Sr,Ca)AlSiN 3 , or combinations thereof.
13. The light emitting device of claim 12 , wherein the wavelength conversion material includes green phosphors, green quantum dots, or combinations thereof.
14. The light emitting device of claim 9 , wherein the wavelength conversion material includes yellow phosphors.
15. A backlight module, comprising:
a printed circuit board; and
a plurality of the light emitting devices according to claim 5 on the printed circuit board.
16. The backlight module of claim 15 , wherein 0.01<n<0.5.
17. The backlight module of claim 15 , wherein 0.01<x<0.6.
18. The backlight module of claim 15 , wherein a peak wavelength of the first light is in a range from about 400 nm to about 500 nm, and a peak wavelength of the second light is in range from about 610 nm to about 710 nm.
19. The backlight module of claim 18 , further comprising a wavelength conversion material, wherein a composition of the wavelength conversion material is different from a composition of the nitride phosphor.
20. The backlight module of claim 19 , wherein the wavelength conversion material includes phosphors, quantum dots, or combinations thereof.