Bulk-acoustic resonator module

1. A bulk-acoustic resonator module, comprising:

a module substrate;

a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; and

a sealing portion sealing the bulk-acoustic resonator,

wherein the bulk-acoustic resonator comprises

a resonator substrate;

an insulating layer disposed on a surface of the resonator substrate;

a resonating portion disposed opposite to an upper surface of the module substrate,

a membrane layer forming a cavity together with the insulating layer, the resonating portion being disposed on the cavity, and comprising a first electrode, a piezoelectric layer, and a second electrode arranged in a stacked configuration,

a protective layer disposed on the resonating portion, wherein the protective layer is disposed on the first electrode, the piezoelectric layer, and the second electrode in the resonating portion,

a hydrophobic layer disposed on the protective layer,

and

a space is disposed between the resonating portion and the upper surface of the module substrate.

2. The bulk-acoustic resonator module of claim 1 , wherein the bulk-acoustic resonator further comprises a resonator substrate,

wherein the resonating portion comprises a first electrode, a piezoelectric layer, and a second electrode stacked on a cavity formed on the resonator substrate, and

wherein the bulk-acoustic resonator module further comprises a blocking member disposed between the bulk-acoustic resonator and the module substrate, outside of the connection terminal, and at least partially covering a side surface of the resonator substrate.

3. The bulk-acoustic resonator module of claim 1 , wherein the hydrophobic layer has a contact angle of 90° or more with water.

4. The bulk-acoustic resonator module of claim 1 , wherein the hydrophobic layer comprises either one or both of fluorine (F) and silicon (Si).

5. The bulk-acoustic resonator module of claim 1 , wherein the hydrophobic layer surrounds the cavity and the membrane layer.

6. The bulk-acoustic resonator module of claim 1 , wherein the protective layer comprises a first protective layer formed of a silicon oxide-based or a silicon nitride-based insulating material, and a second protective layer formed of any one of an aluminum oxide-based insulating material, an aluminum nitride-based insulating material, a magnesium oxide-based insulating material, a titanium oxide-based insulating materials, a zirconium oxide-based insulating material, and a zinc oxide-based insulating material.

7. The bulk-acoustic resonator module of claim 1 , wherein a distance between the bulk-acoustic resonator and the module substrate is 10 μm to 30 μm.

8. The bulk-acoustic resonator module of claim 1 , wherein a trench is formed in the upper surface of the module substrate, and a portion of the connection terminal connecting the bulk-acoustic resonator to the module substrate is disposed in the trench.

9. The bulk-acoustic resonator module of claim 8 , wherein a distance between the upper surface of the module substrate and a rim of a lower surface of the bulk-acoustic resonator is 0 μm to 20 μm.

10. The bulk-acoustic resonator module of claim 8 , wherein a horizontal length of the trench is shorter than a horizontal length of the bulk-acoustic resonator.

11. The bulk-acoustic resonator module of claim 9 , wherein a depth of the trench is 20 μm to 30 μm.

12. The bulk-acoustic resonator module of claim 1 , further comprising a blocking member disposed between the bulk-acoustic resonator and the module substrate.

13. The bulk-acoustic resonator module of claim 12 , wherein the blocking member is in contact with at least one surface of the connection terminal.

14. The bulk-acoustic resonator module of claim 12 , wherein the blocking member is spaced apart from the upper surface of the module substrate.

15. The bulk-acoustic resonator module of claim 12 , wherein a trench is formed in the upper surface of the module substrate, and the blocking member is disposed in the trench.

16. The bulk-acoustic resonator module of claim 12 , wherein the blocking member is made of a conductive material, and is spaced apart from the connection terminal.

17. The bulk-acoustic resonator module of claim 1 , further comprising a blocking member disposed outside of the connection terminal and formed to cover a side surface of the connection terminal.

18. The bulk-acoustic resonator module of claim 1 , further comprising an electronic device mounted on the module substrate so as to be disposed adjacent to the bulk-acoustic resonator.

19. A bulk-acoustic resonator module, comprising:

a module substrate;

a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate;

a sealing portion sealing the bulk-acoustic resonator,

wherein the bulk-acoustic resonator comprises a resonating portion disposed opposite to an upper surface of the module substrate, and a space is disposed between the resonating portion and the upper surface of the module substrate; and

a blocking member disposed between the bulk-acoustic resonator and the module substrate.

20. A bulk-acoustic resonator module, comprising:

a module substrate;

a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate;

a sealing portion sealing the bulk-acoustic resonator,

wherein the bulk-acoustic resonator comprises a resonating portion disposed opposite to an upper surface of the module substrate, and a space is disposed between the resonating portion and the upper surface of the module substrate; and

a blocking member disposed outside of the connection terminal and formed to cover a side surface of the connection terminal.