Image pickup device and electronic apparatus with an image plane phase detection difference detection pixel
The present disclosure relates to an image pickup device that enables inhibition of occurrence of color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF. The image plane phase difference detection pixel includes: a first photoelectric conversion section that generates an electric charge in response to incident light; an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section; and a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section, the lower electrode section being multiple-divided at a position that avoids a center of the incident light. The present disclosure is applicable to image sensors.
1. An imaging device, comprising:
a first photoelectric conversion section disposed above a substrate; and
an on-chip lens disposed above a part of the first photoelectric conversion section, wherein the part of the first photoelectric conversion section comprises:
a part of a photoelectric conversion layer;
a part of an upper electrode disposed above the part of the photoelectric conversion layer; and
image plane phase difference detection pixels for obtaining phase difference signals for image plane phase difference Auto Focus (AF), wherein a lower electrode is disposed below the part of the photoelectric conversion layer, and wherein the lower electrode is unevenly split at a position that avoids a center of the on-chip lens into a first section and a second section.
2. The imaging device according to claim 1 , wherein the second section of the lower electrode overlaps the center of the on-chip lens in the plan view.
3. The imaging device according to claim 2 , wherein the first section of the lower electrode overlaps the center of the on-chip lens in the plan view.
4. The imaging device according to claim 1 , wherein the first photoelectric conversion section can generate an electric charge in response to only a specified wavelength of light.
5. The imaging device according to claim 1 , further comprising:
normal pixels for obtaining image signals.
6. The imaging device according to claim 5 , wherein the normal pixels have a red or a blue color filter, and wherein the image plane phase difference detection pixels have a green color filter.
7. The imaging device according to claim 1 , wherein the upper electrode is formed of a transparent material that transmit incident light concentrated by the on-chip lens.
8. The imaging device according to claim 1 , wherein at least one of the first section and the second section of the lower electrode are made of a material that reflects light.
9. The imaging device according to claim 1 , wherein at least one of the first section the second section of the lower electrode are made of a metal material that reflects light.
10. The imaging device according to claim 1 , wherein one of the first section or the second section of the lower electrode is longer than the other of the first section and the second section.
11. The imaging device according to claim 1 , wherein an output of one of the first section or the second section of the lower electrodes is used as a phase difference signal for image plane phase difference AF.
12. The imaging device according to claim 1 , wherein outputs of the first section and the second section of the lower electrode are added to be used as an image signal.