Conductive structures, assemblies having vertically-stacked memory cells over conductive structures, and methods of forming conductive structures
Some embodiments include a conductive structure of an integrated circuit. The conductive structure includes an upper primary portion, with the upper primary portion having a first conductive constituent configured as a container. The container has a bottom, and a pair of sidewalls extending upwardly from the bottom. An interior region of the container is over the bottom and between the sidewalls. The upper primary portion includes a second conductive constituent configured as a mass filling the interior region of the container. The second conductive constituent is a different composition than the first conductive constituent. One or more conductive projections join to the upper primary portion and extend downwardly from the upper primary portion. Some embodiments include assemblies comprising memory cells over conductive structures. Some embodiments include methods of forming conductive structures.
1. A method of forming a conductive structure, comprising:
forming a trench extending into an insuiative mass, and forming one or more vias extending downwardly from the trench and into the insulative mass;
forming one or more metal-containing conductive materials within the one or more vias and within the trench; said one or more metal-containing conductive materials filling the one or more vias to form a conductive projection within each of said one or more vias; a first metal-containing conductive material of said one or more metal-containing conductive materials comprising a continuous structure lining an entirety of a periphery of the trench and the first metal-containing conductive material lining an entirety of a periphery of the one or more vias; a second metal-containing conductive material of the one or more metal-containing conductive materials comprising a continuous structure against an entirety of the first metal-containing conductive material; the one or more metal-containing conductive materials form a conductive container within the trench; the conductive container having a bottom and having a pair of sidewalls extending upwardly from the bottom; an interior region of the container being over the bottom and being between the sidewalls; and
forming a conductive mass within the interior region of the container, the conductive mass comprising conductively-doped semiconductor material.
2. The method of claim 1 wherein the first metal-containing conductive material comprising titanium nitride, the second metal-containing conductive material over the first metal-containing conductive material and comprising tungsten, and a third metal-containing conductive material over the second metal-containing conductive material and comprising titanium nitride.
3. The method of claim 1 wherein the conductively-doped semiconductor material comprises n-type silicon.
4. The method of claim 1 wherein the conductive mass is formed to fill the trench and extend across the sidewalls, and comprising planarizing the container and the conductive mass to remove the conductive mass from over the sidewalls and form a planarized surface extending across the conductive mass and the sidewalls.
5. The method of claim 1 further comprising forming vertically-extending channel material pillars over the conductive mass and directly against the conductive mass, and forming memory cells along the vertically-extending channel material pillars.
6. The method of claim 1 wherein the one or more vias join to the trench at arcuate surfaces.
7. The method of claim 6 wherein the one or more vias are patterned with a first reticle, and wherein the trench is patterned with a second reticle.
8. The method of claim 1 wherein the interior region of the container is entirely filled with the conductively-doped semiconductor material.
9. The method of claim 1 wherein the conductively-doped semiconductor material in the interior region contacts the one or more metal-containing conductive materials in the one or more vias.
10. The method of claim 1 wherein the entire bottom of the conductive container comprises at least three metal-containing conductive materials.
11. The method of claim 1 wherein the conductive container comprises at least three metal-containing conductive materials, and wherein one of the at least three metal-containing conductive materials is entirely spaced from another one of the at least three metal-containing conductive materials.
12. The method of claim 1 wherein the second metal-conductive material comprises a continuous structure for an entirety of the structure.
13. The method of claim 1 further comprising forming a third metal-containing conductive material, an entire one side of the third metal-containing conductive material is against only the second metal-containing conductive material.
14. The method of claim 1 further comprising forming a channel of a memory cell directly contacting the conductive structure.
15. The method of claim 14 further comprising diffusing dopant from the conductive mass into the channel.
16. The method of claim 2 wherein the third metal-containing conductive material is entirely spaced from the first metal-containing conductive material.
17. The method of claim 16 wherein the third metal-containing conductive material comprises tantalum nitride.
18. The method of claim 1 wherein the conductive structure comprises a source line.
19. The method of claim 1 wherein the first metal-containing conductive material comprises tantalum nitride.
20. The method of claim 1 wherein the forming of the trench occurs before the forming of the one or more vias.
21. The method of claim 1 further comprising forming a stack of alternating insulative levels and conductive levels over the conductive structure.
22. The method of claim 1 further comprising forming a memory cell over the conductive structure.
23. The method of claim 1 further comprising forming charge-blocking material against the conductive structure.