Micro-transfer-printable flip-chip structures and methods
In certain embodiments, a method of making a semiconductor structure suitable for transfer printing (e.g., micro-transfer printing) includes providing a support substrate and disposing and processing one or more semiconductor layers on the support substrate to make a completed semiconductor device. A patterned release layer and, optionally, a capping layer are disposed on or over the completed semiconductor device and the patterned release layer or capping layer, if present, are bonded to a handle substrate with a bonding layer. The support substrate is removed to expose the completed semiconductor device and, in some embodiments, a portion of the patterned release layer. In some embodiments, an entry path is formed to expose a portion of the patterned release layer. In some embodiments, the release layer is etched and the completed semiconductor devices transfer printed (e.g., micro-transfer printed) from the handle substrate to a destination substrate.
1. A method of making a semiconductor structure suitable for transfer printing, comprising:
providing a support substrate;
forming a completed semiconductor device disposed in, on, or over the support substrate;
forming a patterned release layer on or over the completed semiconductor device;
providing a capping layer on the patterned release layer;
providing a handle substrate;
disposing a conformable and curable bonding layer on the capping layer or on the handle substrate;
disposing the handle substrate and the capping layer in contact with the bonding layer;
curing the bonding layer to bond the handle substrate to the capping layer;
removing the support substrate to expose the completed semiconductor device;
removing at least a portion of the patterned release layer to form a gap between at least a portion of the completed semiconductor device and at least a portion of the bonding layer; and
forming a tether physically connecting the completed semiconductor device to an anchor disposed on the handle substrate.
2. The method of claim 1 , comprising:
forming an entry path to expose a portion of the patterned release layer.
3. The method of claim 1 , comprising:
providing a destination substrate; and
micro-transfer printing the completed semiconductor device from the handle substrate to the destination substrate.
4. The method of claim 1 , wherein the support substrate is transparent to electromagnetic radiation and the method comprises:
exposing the semiconductor layer to electromagnetic radiation through the support substrate to decompose a portion of the completed semiconductor device and form a shock wave in the semiconductor structure, wherein the capping layer disperses, reflects, deflects, or absorbs the shock wave.
5. The method of claim 1 , wherein the support substrate is transparent to electromagnetic energy, and the method comprises:
providing an ablation layer between the support substrate and the completed semiconductor device; and
exposing the ablation layer to electromagnetic radiation through the support substrate to decompose a portion of the ablation layer and form a shock wave in the completed semiconductor structure, wherein the capping layer disperses, reflects, deflects, or absorbs the shock wave.
6. The method of claim 1 , wherein removing the support substrate comprises one or more of laser liftoff, ablation, laser ablation, etching, and grinding.
7. The method of claim 1 , comprising:
providing an ablation or etch-stop layer between the completed semiconductor device and the support substrate.
8. The method of claim 1 , wherein removing the support substrate to expose the completed semiconductor device comprises removing a removal layer.
9. The method of claim 1 , wherein the support substrate is a semiconductor substrate and forming the completed semiconductor device comprises:
doping a portion or layer of the semiconductor substrate.
10. The method of claim 1 , wherein forming the completed semiconductor device comprises:
disposing one or more semiconductor layers in, on, or over the support substrate.
11. The method of claim 10 , wherein forming the completed semiconductor device comprises growing the one or more semiconductor layers on the support substrate or on a growth layer on the support substrate.
12. The method of claim 10 , wherein forming the completed semiconductor device comprises:
processing the one or more semiconductor layers.
13. A method of making a semiconductor structure suitable for transfer printing, comprising:
providing a support substrate;
forming a completed semiconductor device disposed in, on, or over the support substrate;
forming a patterned release layer on or over the completed semiconductor device;
providing a handle substrate;
disposing a conformable and curable bonding layer on the patterned release layer or on the handle substrate;
disposing the handle substrate and the patterned release layer in contact with the bonding layer;
curing the bonding layer to bond the handle substrate to the patterned release layer;
removing the support substrate to expose the completed semiconductor device;
removing at least a portion of the patterned release layer to form a gap between at least a portion of the completed semiconductor device and at least a portion of the bonding layer; and
forming a tether physically connecting the completed semiconductor device to an anchor disposed on the handle substrate.
14. The method of claim 13 , comprising:
disposing the conformable and curable bonding layer on the patterned release layer, wherein disposing the conformable and curable bonding layer on the patterned release layer comprises disposing the conformable and curable bonding layer on at least one of (i) a portion of a dielectric layer disposed on the completed semiconductor structure and (ii) a portion of the completed semiconductor structure.
15. The method of claim 13 , comprising:
providing a destination substrate; and
micro-transfer printing the completed semiconductor device from the handle substrate to the destination substrate.
16. The method of claim 13 , wherein removing the support substrate comprises one or more of laser liftoff, ablation, laser ablation, etching, and grinding.
17. The method of claim 13 , comprising providing an ablation or etch-stop layer between the completed semiconductor device and the support substrate.
18. The method of claim 13 , wherein removing the support substrate to expose the completed semiconductor device comprises removing a removal layer.
19. The method of claim 13 , wherein the support substrate is a semiconductor substrate and forming the completed semiconductor device comprises:
doping a portion or layer of the semiconductor substrate.
20. The method of claim 13 , wherein forming the completed semiconductor device comprises:
disposing one or more semiconductor layers in, on, or over the support substrate.
21. The method of claim 20 , wherein forming the completed semiconductor device comprises:
growing the one or more semiconductor layers on the support substrate or on a growth layer on the support substrate.
22. The method of claim 20 , wherein forming the completed semiconductor device comprises:
processing the one or more semiconductor layers.
23. A method of making a semiconductor structure suitable for transfer printing, comprising:
providing a support substrate;
forming a completed semiconductor device disposed in, on, or over the support substrate;
forming a patterned release layer on or over the completed semiconductor device;
providing a capping layer on the patterned release layer;
providing a handle substrate;
disposing a conformable and curable bonding layer on the capping layer or on the handle substrate;
disposing the handle substrate and the capping layer in contact with the bonding layer;
curing the bonding layer to bond the handle substrate to the capping layer;
removing the support substrate to expose the completed semiconductor device;
providing a destination substrate; and
micro-transfer printing the completed semiconductor device from the handle substrate to the destination substrate.