Semiconductor device using EMC wafer support system and fabricating method thereof
Provided are a semiconductor device using, for example, an epoxy molding compound (EMC) wafer support system and a fabricating method thereof, which can, for example, adjust a thickness of the overall package in a final stage of completing the device while shortening a fabricating process and considerably reducing the fabrication cost. An example semiconductor device may comprise a first semiconductor die that comprises a bond pad and a through silicon via (TSV) connected to the bond pad; an interposer comprising a redistribution layer connected to the bond pad or the TSV and formed on the first semiconductor die, a second semiconductor die connected to the redistribution layer of the interposer and positioned on the interposer; an encapsulation unit encapsulating the second semiconductor die, and a solder ball connected to the bond pad or the TSV of the first semiconductor die.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a structure comprising:
a first semiconductor die comprising: a bond pad on a top side of the first semiconductor die, and a through silicon via (TSV) extending from the bond pad toward a bottom side of the first semiconductor die;
an interposer on the top side of the first semiconductor die, said interposer comprising at least one conductive layer and at least one dielectric layer on the top side of the first semiconductor die, wherein the at least one conductive layer is electrically connected to the bond pad; and
a support structure, wherein the support structure comprises a top side coupled to the bottom side of the first semiconductor die;
connecting a second semiconductor die to the at least one conductive layer of the interposer;
forming an encapsulation layer around the second semiconductor die;
exposing the TSV, said exposing the TSV comprising removing the support structure; and
forming a lower interconnection structure on the exposed TSV.
2. The method of claim 1 , wherein said forming the structure comprises:
receiving an initial structure comprising the first semiconductor die coupled to the support structure; and
forming the interposer on the top side of the first semiconductor die.
3. The method of claim 2 , wherein said forming the interposer comprises forming the interposer when the first semiconductor die has a thickness greater than 400 microns and when the TSV has a length no greater than 70 microns.
4. The method of claim 1 , wherein said forming a lower interconnection structure on the exposed TSV comprises:
sequentially layering at least one lower-side conductive layer and at least one lower-side dielectric layer on the bottom side of the first semiconductor die, where the at least one lower-side conductive layer is electrically coupled to the exposed TSV; and
forming a conductive ball on the at least one lower-side conductive layer.
5. The method of claim 1 , wherein when the semiconductor device is completed, a top side of the second semiconductor die is entirely covered by the encapsulation layer.
6. The method of claim 1 , wherein said exposing the TSV comprises, after said removing the support structure, removing material from the bottom side of the first semiconductor die.
7. The method of claim 1 , wherein a lateral surface of the first semiconductor die, a lateral surface of the interposer, and a lateral surface of the encapsulation layer are coplanar.
8. A method of manufacturing a semiconductor device, the method comprising:
forming a structure comprising:
a first semiconductor die comprising a via structure comprising: a bond pad on a first side of the first semiconductor die, and a through silicon via (TSV) extending from the bond pad toward a second side of the first semiconductor die;
an interposer coupled to the first semiconductor die and positioned above the first semiconductor die, said interposer comprising a conductive layer and a dielectric layer, wherein the conductive layer is electrically connected to the bond pad; and
a support structure coupled to the first semiconductor die and positioned below the first semiconductor die;
connecting a second semiconductor die to the conductive layer of the interposer;
forming an encapsulation layer around the second semiconductor die;
exposing the via structure, said exposing the via structure comprising removing the support structure; and
forming a lower interconnection structure on the exposed via structure.
9. The method of claim 8 , wherein said forming a lower interconnection structure on the exposed via structure comprises:
forming a lower-side dielectric layer on the bottom side of the first semiconductor die; and
forming a conductive ball on and electrically connected to the via structure,
wherein the lower-side dielectric layer laterally surrounds an upper portion of the conductive ball.
10. The method of claim 8 , wherein said exposing the via structure comprises, after said removing the support structure, removing material from the bottom side of the first semiconductor die.
11. The method of claim 10 , wherein said exposing the via structure comprises exposing the TSV.
12. The method of claim 8 , wherein a lateral surface of the first semiconductor die, a lateral surface of the interposer, and a lateral surface of the encapsulation layer are coplanar.
13. The method of claim 8 , wherein the support structure comprises a molded encapsulation.