Methods and apparatus for processing a substrate using microwave energy

1. A process chamber for processing a substrate, comprising:

a microwave energy source configured to provide microwave energy from beneath a substrate support provided in an inner volume of the process chamber;

a first microwave reflector positioned on the substrate support above a substrate supporting position of the substrate support; and

a second microwave reflector positioned on the substrate support beneath the substrate supporting position; and

a third microwave reflector having a generally annular configuration with a center second portion connected to an inner edge of a first portion via at least two metal connectors,

wherein the first microwave reflector and the second microwave reflector are positioned and configured such that microwave energy passes through the second microwave reflector and some of the microwave energy is reflected from a bottom surface of the first microwave reflector back to the substrate during operation, and

wherein the third microwave reflector is positioned such that microwave energy is reflected from bottom surfaces of the first portion and the second portion of the third microwave reflector to the second microwave reflector and redirected back from the second microwave reflector and to the substrate during operation.

2. The process chamber of claim 1 , wherein the first microwave reflector includes an annular configuration having:

an inner diameter of about 100 mm to about 250 mm and an inner diameter thickness of about 1.00 mm to about 5.00 mm; and

an outer diameter of about 300 mm to about 350 mm and an outer diameter thickness of about 1.00 mm to about 5.00 mm.

3. The process chamber of claim 1 , wherein the first microwave reflector includes a first portion defined by an inner edge and an outer edge, and a step defined from the outer edge of the first portion to an outer edge of a second portion of the first microwave reflector.

4. The process chamber of claim 1 , wherein the first microwave reflector is made from at least one of stainless steel, aluminum, or copper.

5. The process chamber of claim 1 , wherein the second microwave reflector includes an annular configuration having:

an inner diameter of about 45 mm to about 51 mm; and

an outer diameter of about 300 mm to about 350 mm.

6. The process chamber of claim 1 , wherein the second microwave reflector is made from at least one of copper, aluminum, or stainless steel.

7. The process chamber of claim 1 ,

wherein the third microwave reflector is positioned on the substrate support above the second microwave reflector and beneath the substrate supporting position.

8. The process chamber of claim 7 , wherein the first portion, the center second portion, and the at least two metal connectors of the third microwave reflector are made from at least one of copper, aluminum, stainless steel.

9. The process chamber of claim 1 , wherein a distance that the bottom surface of the first microwave reflector is from a top surface of the substrate is at least three microwave wavelengths, a distance that a bottom surface of the substrate is from one of a bottom surface disposed within the inner volume of the process chamber or a waveguide opening disposed at the bottom surface is at least three microwave wavelengths but no greater than about 160 mm, and a distance that a bottom surface of the second microwave reflector is from one of the bottom surface disposed within the inner volume of the process chamber or the waveguide opening is about 15 mm to about 80 mm.

10. The process chamber of claim 1 , wherein the substrate is made from at least one of glass having at least one metal deposited thereon, silicon having at least one metal deposited thereon, or epoxy with embedded silicon dies.

11. A process chamber for processing a substrate, comprising:

a substrate support provided in an inner volume of the process chamber;

a first microwave reflector positioned on the substrate support above a substrate supporting position of the substrate support;

a second microwave reflector positioned on the substrate support beneath the substrate supporting position; and

a third microwave reflector having a generally annular configuration with a center second portion connected to an inner edge of a first portion via at least two metal connectors, the third microwave reflector positioned on the substrate support above the second microwave reflector and beneath the substrate supporting position,

wherein the microwave energy passes through the second microwave reflector and some of the microwave energy passes through the third microwave reflector such that some of the microwave energy is reflected from a bottom surface of the first microwave reflector back to the substrate during operation.

12. A method for processing a substrate using a process chamber, comprising:

positioning, on a substrate support disposed in an inner volume of the process chamber, a first microwave reflector above a substrate;

positioning, on the substrate support, a second microwave reflector beneath the substrate;

positioning, on the substrate support, a third microwave reflector having a generally annular configuration with a center second portion connected to an inner edge of a first portion via at least two metal connectors; and

transmitting, from beneath the substrate, microwave energy from a microwave energy source of the process chamber such that the microwave energy passes through the second microwave reflector and some of the microwave energy passes through the third microwave reflector such that some of the microwave energy is reflected from a bottom surface of the first microwave reflector back to the substrate.

13. The method of claim 12 , wherein providing the first microwave reflector comprises providing the first microwave reflector with annular configuration having:

an inner diameter of about 100 mm to about 250 mm and an inner diameter thickness of about 1.00 mm to about 5.00 mm; and

an outer diameter of about 300 mm to about 350 mm and an outer diameter thickness of about 1.00 mm to about 5.00 mm.

14. The method of claim 12 , wherein providing the first microwave reflector comprises providing the first microwave reflector with:

a first portion defined by an inner edge and an outer edge, and a step defined from the outer edge of the first portion to an outer edge of a second portion of the first microwave reflector.

15. The method of claim 12 , wherein the first microwave reflector is made from at least one of stainless steel, aluminum, or copper.

16. The method of claim 12 , wherein providing the second microwave reflector comprises providing the second microwave reflector with an annular configuration having:

an inner diameter of about 45 mm to about 51 mm; and

an outer diameter of about 300 mm to about 350 mm.

17. The method of claim 12 , wherein the second microwave reflector is made from at least one of copper, aluminum, or stainless steel.

18. The method of claim 12 ,

wherein the third microwave reflector is positioned above the second microwave reflector and beneath the substrate supporting position.

19. The method of claim 18 , wherein the first portion, the second portion, and the at least two metal connectors of the third microwave reflector are made from at least one of copper, aluminum, stainless steel.

20. The method of claim 12 , wherein a distance that the bottom surface of the first microwave reflector is from a top surface of the substrate, when present, is at least three microwave wavelengths, a distance that a bottom surface of the substrate, when present, is from one of a bottom surface disposed within the inner volume of the process chamber or a waveguide opening disposed at the bottom surface is at least three microwave wavelengths but no greater than about 160 mm, and a distance that a bottom surface of the second microwave reflector is from one of the bottom surface disposed within the inner volume of the process chamber or the waveguide opening is about 15 mm to about 80 mm.