Crystal growth apparatus
A crystal growth apparatus including: a heat source, a crucible including a container body in which a raw material can be received and a lid part on which a seed crystal can be mounted; a first heat insulating part which is disposed externally of the crucible and in which a first through-hole penetrating in a thickness direction is provided; a second heat insulating part which is disposed externally of the first heat insulating part and in which a second through-hole penetrating in a thickness direction is provided; a moving mechanism configured to move the first heat insulating part and the second heat insulating part relative to each other; and a radiation type temperature measuring unit configured to measure a temperature of the crucible via the first through-hole and the second through-hole.
1. A crystal growth apparatus comprising:
a heat source;
a crucible including a container body in which a raw material is to be received and a lid part on which a seed crystal is to be mounted;
a first heat insulating part which is disposed externally of the crucible and in which at least one first through-hole penetrating in a thickness direction is provided;
a second heat insulating part which is disposed externally of the first heat insulating part and in which at least one second through-hole penetrating in a thickness direction is provided;
a moving mechanism configured to move the first heat insulating part and the second heat insulating part relative to each other, and to switch between a state in which the first through-hole and the second through-hole communicate with each other and a state in which the first and second through holes do not communicate with each other; and
a radiation type temperature measuring unit configured to measure a temperature of the crucible via the first through-hole and the second through-hole,
wherein the first heat insulating part covers an upper surface of the crucible and an outer surface of the crucible from a lower end of the outer surface of the crucible to an upper end of the outer surface of the crucible.
2. The crystal growth apparatus according to claim 1 , wherein:
the first heat insulating part is movably provided along with the crucible;
the second heat insulating part is fixed to a furnace body; and
the moving mechanism is configured to move both the crucible and the first heat insulating part relative to the second heat insulating part.
3. The crystal growth apparatus according to claim 2 , wherein:
all of the crucible, the first heat insulating part, and the second heat insulating part have circular shapes in a top view, and are disposed coaxially with one another or equivalent thereto; and
the moving mechanism includes a turning device that is configured to turn the crucible and the first heat insulating part around an axis extending in a vertical direction.
4. The crystal growth apparatus according to claim 3 , wherein:
the first heat insulating part includes a first sidewall that is disposed to surround the outer surface of the crucible;
the at least one first through-hole is a first transverse hole that is provided to pass through the first sidewall;
the second heat insulating part includes a second sidewall that is disposed to surround an outer surface of the first sidewall; and
the at least one second through-hole is a second transverse hole that is provided to pass through the second sidewall.
5. The crystal growth apparatus according to claim 3 , wherein:
the first heat insulating part includes a first upper wall that is disposed to cover the upper surface of the crucible;
the first through-hole is a first longitudinal hole that is provided to pass through the first upper wall;
the second heat insulating part includes a second upper wall that is disposed to cover an upper surface of the first upper wall; and
the second through-hole is a second longitudinal hole that is provided to pass through the second upper wall.
6. The crystal growth apparatus according to claim 3 , wherein:
the first heat insulating part includes a first sidewall that is disposed to cover the outer surface of the crucible, and a first upper wall that is disposed to cover the upper surface of the crucible;
the at least one first through-hole is a first longitudinal hole that is provided to pass through the first upper wall, and a first transverse hole that is provided to pass through the first sidewall;
the second heat insulating part includes a second sidewall that is disposed to cover the outer surface of the first sidewall, and a second upper wall that is disposed to cover an upper surface of the first upper wall; and
the at least one second through-hole is a second longitudinal hole that is provided to pass through the second upper wall, and a second transverse hole that is provided to pass through the second sidewall.
7. The crystal growth apparatus according to claim 2 , wherein the moving mechanism includes a lifting device that raises/lowers the crucible and the first heat insulating part.
8. The crystal growth apparatus according to claim 7 , wherein:
the first heat insulating part includes a first sidewall that is disposed to cover a lateral surface of the crucible;
the at least one first through-hole is a first transverse hole that is provided to pass through the first sidewall;
the second heat insulating part includes a second sidewall that is disposed to cover a lateral surface of the first sidewall; and
the at least one second through-hole is a second transverse hole that is provided to pass through the second sidewall.
9. The crystal growth apparatus according to claim 1 , wherein the moving mechanism includes a lifting device that raises/lowers the crucible and the first heat insulating part.
10. The crystal growth apparatus according to claim 9 , wherein:
the first heat insulating part includes a first sidewall that is disposed to cover a lateral surface of the crucible;
the at least one first through-hole is a first transverse hole that is provided to pass through the first sidewall;
the second heat insulating part includes a second sidewall that is disposed to cover a lateral surface of the first sidewall; and
the at least one second through-hole is a second transverse hole that is provided to pass through the second sidewall.
11. The crystal growth apparatus according to claim 1 , wherein the seed crystal is composed of any material selected from the group consisting of SiC, A 1 N, GaN, GaAs, and Si.
12. The crystal growth apparatus according to claim 11 , wherein:
the raw material is formed of a SiC-containing powder or an A 1 N-containing powder; and
the seed crystal is composed of a SiC single crystal or an A 1 N single crystal.
13. The crystal growth apparatus according to claim 11 , wherein:
the raw material is formed of a gas containing Si and C or a gas containing Ga and As; and
the seed crystal is composed of a SiC single crystal or a GaN single crystal.
14. The crystal growth apparatus according to claim 11 , wherein:
the raw material is formed of a liquid containing Si and C or a liquid containing Si; and
the seed crystal is composed of a SiC single crystal or a Si single crystal.