Memory arrays and methods used in forming a memory array comprising strings of memory cells
A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Upper masses comprise first material laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks and second material laterally-between and longitudinally-spaced-along the immediately-laterally-adjacent memory blocks longitudinally-between and under the upper masses. The second material is of different composition from that of the first material. The second material comprises insulative material. Other embodiments, including method, are disclosed.
1. A memory array comprising strings of memory cells, comprising:
laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, operative channel-material strings of memory cells extending through the insulative tiers and the conductive tiers;
upper masses comprising first material laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks, the upper masses individually comprising a bottom that is above an uppermost of the conductive tiers; and
second material laterally-between and longitudinally-spaced-along the immediately-laterally-adjacent memory blocks longitudinally-between the upper masses, the second material being in the uppermost conductive tier and directly under the bottoms of the upper masses, the second material being of different composition from that of the first material, the second material comprising insulative material.
2. The memory array of claim 1 wherein the respective upper masses comprise a top planar surface that is coplanar with a top planar surface of the vertical stack.
3. The memory array of claim 1 wherein the upper masses individually comprise a six-flat-sided block of the first material.
4. The memory array of claim 1 wherein the second material is directly against first-material longitudinal sidewalls of the upper masses.
5. The memory array of claim 1 wherein the second material is directly against the bottoms of the upper masses.
6. The memory array of claim 1 wherein the first material is conductive.
7. The memory array of claim 1 wherein the first material is insulative.
8. The memory array of claim 1 wherein the first material is semiconductive.
9. The memory array of claim 1 comprising NAND.
10. A memory array comprising strings of memory cells, comprising:
laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, operative channel-material strings of memory cells extending through the insulative tiers and the conductive tiers;
upper masses of first material laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks, the upper masses individually comprising a bottom that is above an uppermost of the conductive tiers;
an oxide-comprising material against first-material longitudinal sidewalls of the upper masses, the oxide-comprising material being of different composition from that of the first material;
second material laterally-between and longitudinally-spaced-along the immediately-laterally-adjacent memory blocks longitudinally-between the upper masses and the oxide-comprising material; and
third material directly under the upper masses, the third material being of different composition from that of at least one of the first material and the oxide-comprising material, the third material comprising insulative material, the third material being in the uppermost conductive tier and directly under the bottoms of the upper masses.
11. The memory array of claim 10 wherein the oxide-comprising material comprises a continuous layer over the first-material longitudinal sidewalls of the upper masses.
12. The memory array of claim 10 wherein the oxide-comprising material comprises a discontinuous layer over the first-material longitudinal sidewalls of the upper masses.
13. The memory array of claim 10 wherein the third and first materials are of the same composition relative one another.
14. The memory array of claim 10 wherein the third and first materials are of different compositions relative one another.
15. The memory array of claim 10 wherein the third and second materials are of different compositions relative one another.
16. The memory array of claim 10 wherein the second and first materials are of different compositions relative one another.
17. The memory array of claim 10 wherein the oxide-comprising material is directly against the first-material longitudinal sidewalls of the upper masses.
18. The memory array of claim 10 wherein the oxide-comprising material is directly under the upper masses.
19. The memory array of claim 18 wherein the oxide-comprising material is directly against the bottoms of the upper masses.
20. The memory array of claim 19 wherein the oxide-comprising material is directly against the first-material longitudinal sidewalls of the upper masses.
21. A memory array comprising strings of memory cells, comprising:
laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, operative channel-material strings of memory cells extending through the insulative tiers and the conductive tiers;
upper masses comprising first material laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks, the upper masses individually comprising a bottom that is above an uppermost of the conductive tiers;
second material laterally-between and longitudinally-spaced-along the immediately-laterally-adjacent memory blocks longitudinally-between the upper masses, the second material being of different composition from that of the first material; and
third material directly under the upper masses, the third material being of different composition from that of each of the first material and the second material, the third material comprising insulative material, the third material being in the uppermost conductive tier and directly under the bottoms of the upper masses.
22. A memory array comprising strings of memory cells, comprising:
laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, operative channel-material strings of memory cells extending through the insulative tiers and the conductive tiers;
upper masses comprising first material laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks, the upper masses individually comprising a first-material bottom that is above an uppermost of the conductive tiers;
a first oxide-comprising material directly against first-material longitudinal sidewalls and the first-material bottoms of the upper masses, the first oxide-comprising material being of different composition from that of the first material;
second material laterally-between and longitudinally-spaced-along the immediately-laterally-adjacent memory blocks longitudinally-between the upper masses and the first oxide-comprising material that is directly against the first-material longitudinal sidewalls of the upper masses, the second material being of different composition from that of the first oxide-comprising material;
third material directly under the upper masses and the first oxide-comprising material that is directly against the first-material bottoms of the upper masses, the third material being of different composition from that of the first oxide-comprising material, the third material comprising insulative material, the third material being in the uppermost conductive tier and directly under the first-material bottoms of the upper masses; and
a second oxide-comprising material directly against longitudinal sidewalls of the third material, the second oxide-comprising material being of different composition from that of the third material.
23. A memory array comprising strings of memory cells, comprising:
laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, operative channel-material strings of memory cells extending through the insulative tiers and the conductive tiers;
upper masses comprising first material laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks, the upper masses individually comprising a first-material bottom that is above an uppermost of the conductive tiers;
a first oxide-comprising material directly against first-material longitudinal sidewalls of the upper masses, the first oxide-comprising material being of different composition from that of the first material;
second material laterally-between and longitudinally-spaced-along the immediately-laterally-adjacent memory blocks longitudinally-between the upper masses and the first oxide-comprising material that is directly against the first-material longitudinal sidewalls of the upper masses, the second material being of different composition from that of the first oxide-comprising material;
third material directly under and directly against the first-material bottoms of the upper masses, the third material being of different composition from that of each of the first material and the first oxide-comprising material, the third material being in the uppermost conductive tier and directly under the first-material bottoms of the upper masses; and
a second oxide-comprising material directly against longitudinal sidewalls of the third material, the second oxide-comprising material being of different composition from that of the third material.
24. The memory array of claim 21 wherein the third material is directly against the first-material bottoms of the upper masses.
25. The memory array of claim 21 wherein the third material is not directly against the first-material bottoms of the upper masses.
26. The memory array of claim 21 wherein the second material is directly against first-material longitudinal sidewalls of the upper masses.
27. The memory array of claim 21 wherein the second material is not directly against first-material longitudinal sidewalls of the upper masses.
28. The memory array of claim 22 wherein the first and second oxide-comprising materials are of the same composition relative one another.
29. The memory array of claim 22 wherein the first and second oxide-comprising materials are of different compositions relative one another.
30. The memory array of claim 22 wherein the third and first materials are of the same composition relative one another.
31. The memory array of claim 22 wherein the third and first materials are of different compositions relative one another.
32. The memory array of claim 22 wherein the second and first materials are of the same composition relative one another.
33. The memory array of claim 22 wherein the second and first materials are of different compositions relative one another.