IP Library Granted Patent US 10,784,329
Granted Patent B2
US 10,784,329 · App. 16/552,819 · Granted Sep 22, 2020

Display apparatus

Inventors: Yangwan Kim (Yongin-si, KR); Wonkyu Kwak (Yongin-si, KR); Jaedu Noh (Yongin-si, KR); Jaeyong Lee (Yongin-si, KR)
Assignee: Samsung Display Co., Ltd.
H01L27/3272H01L27/124H01L27/3262H01L27/3265H01L27/3276G02F1/136213G02F2001/13629G02F2001/136218
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Quick Facts
Patent No.
US 10,784,329
App. No.
16/552,819
Granted
Sep 22, 2020
Kind
B2
Abstract

A display apparatus includes: a thin-film transistor including a source electrode, a drain electrode, and a gate electrode; a data line in a layer different from the source electrode, the drain electrode, and the gate electrode, wherein the data line is configured to transmit a data signal; and a shield layer between the data line and a component of the thin-film transistor.

Claims (76)

1. A display apparatus comprising:

a first thin-film transistor comprising a gate electrode and a first semiconductor layer having a curved shape;

a capacitor comprising a first electrode layer overlapping a part of the first semiconductor layer and a second electrode layer overlapping the first electrode layer; and

a data line extended in a first direction, the data line overlapping a part of the second electrode layer; and

a first voltage line extended in the first direction and electrically connected to the second electrode layer,

wherein the second electrode layer overlaps a second semiconductor layer extended from one end of the first semiconductor layer, the second semiconductor layer comprising a first part between the data line and the gate electrode and a second part extended from the first part and overlapped with the data line, and

wherein a length along the first direction of the overlapping part of the second electrode layer with the data line is longer than a length along the first direction of the first part of the second semiconductor layer.

2. The display apparatus of claim 1 , wherein the first electrode layer is electrically connected to a gate electrode of the first thin-film transistor.

3. The display apparatus of claim 1 , wherein a gate electrode of first thin-film transistor and the first electrode layer are integrally formed.

4. The display apparatus of claim 1 , further comprising:

a first scan line extended in a second direction crossing the first direction; and

a second scan line extended in the second direction and spaced apart from the first scan line; and

a third semiconductor layer extended from the other end of the first semiconductor layer, and

wherein the third semiconductor layer crosses twice each of the first scan line and the second scan line.

5. The display apparatus of claim 1 , further comprising:

a second thin-film transistor comprising a third semiconductor layer extended from the other end of the first semiconductor layer and a gate electrode, and

wherein the gate electrode of the second thin-film transistor comprises a first gate electrode and a second gate electrode on a same layer.

6. The display apparatus of claim 5 , further comprising:

a scan line extended in a second direction crossing the first direction, and

wherein the first gate electrode and the second gate electrode are parts of the scan line overlapping the third semiconductor layer.

7. The display apparatus of claim 6 , further comprising:

a second voltage line extended in the second direction and spaced apart from the scan line, the second voltage line being electrically connected to the third semiconductor layer.

8. The display apparatus of claim 7 , wherein the second voltage line overlaps a part of the third semiconductor layer between the first gate electrode and the second gate electrode.

9. The display apparatus of claim 7 , further comprising a fourth semiconductor layer extended from the third semiconductor layer, and

wherein the scan line overlaps a part of the fourth semiconductor layer, and

wherein the second voltage line is electrically connected to the fourth semiconductor layer.

10. A display apparatus comprising:

a first thin-film transistor comprising a first semiconductor layer having a curved shape and a first gate electrode;

a second thin-film transistor comprising a second semiconductor layer having a curved shape and two second gate electrodes on a same layer, the second semiconductor layer being extended from one end of the first semiconductor layer and being electrically connected to the first gate electrode; and

an electrode layer overlapping a part of the second semiconductor layer between the two second gate electrodes.

11. The display apparatus of claim 10 , further comprising a first voltage line electrically connected to the electrode layer.

12. The display apparatus of claim 10 , further comprising a first scan line overlapping the second semiconductor layer, and

wherein the two second gate electrodes are parts of the first scan line overlapping the second semiconductor layer.

13. The display apparatus of claim 10 , further comprising:

a capacitor comprising a first electrode layer overlapping a part of the first semiconductor layer and a second electrode layer overlapping the first electrode layer; and

a first voltage line electrically connected to the second electrode layer.

14. The display apparatus of claim 10 , further comprising:

a third semiconductor layer extended from the end of the second semiconductor layer; and

a second scan line overlapping the third semiconductor layer, and

wherein the third semiconductor layer crosses twice the second scan line.

15. The display apparatus of claim 10 , further comprising:

a third thin-film transistor comprising a third semiconductor layer extended from the second semiconductor layer and two third gate electrodes on a same layer.

16. The display apparatus of claim 13 , wherein the first electrode layer is electrically coupled to the first gate electrode.

17. The display apparatus of claim 13 , wherein the electrode layer is a protruding part of the second electrode layer.

18. The display apparatus of claim 15 , further comprising:

a second scan line extended in a second direction crossing a first direction, and

wherein the two third gate electrodes are parts of the second scan line overlapping the third semiconductor layer.

19. The display apparatus of claim 18 , further comprising:

a second voltage line extended in the second direction and spaced apart from the second scan line,

wherein the second voltage line is electrically connected to the third semiconductor layer.

20. The display apparatus of claim 19 , wherein the second voltage line overlaps a part of the third semiconductor layer between the two third gate electrodes.

21. The display apparatus of claim 19 , further comprising a fourth semiconductor layer extended from the third semiconductor layer, and

wherein the second scan line overlaps a part of the fourth semiconductor layer, and

wherein the second voltage line is electrically connected to the fourth semiconductor layer.

22. A display apparatus comprising:

a first thin-film transistor comprising a first semiconductor layer having a curved shape and a first gate electrode;

a second thin-film transistor comprising a second semiconductor layer having a curved shape and two second gate electrodes on a same layer, the second semiconductor layer being extended from one end of the first semiconductor layer and being electrically connected to the first gate electrode; and

an electrode layer overlapping a part of the second semiconductor layer between the two second gate electrodes, and

wherein the electrode layer is electrically connected to the second semiconductor layer.

23. The display apparatus of claim 22 , further comprising a first scan line extended to cross the second semiconductor layer, and

wherein the two second gate electrodes are parts of the first scan line overlapping the second semiconductor layer.

24. The display apparatus of claim 22 , further comprising:

a capacitor comprising a first electrode layer overlapping a part of the first semiconductor layer and a second electrode layer overlapping the first electrode layer; and

a voltage line electrically connected to the second electrode layer.

25. The display apparatus of claim 22 , further comprising:

a fourth thin-film transistor comprising a fourth semiconductor layer between the first semiconductor layer and the second semiconductor layer, and two fourth gate electrodes on a same layer, and

wherein the fourth semiconductor layer is electrically connected to the first gate electrode.

26. The display apparatus of claim 23 , further comprising a third semiconductor layer extended from the second semiconductor layer, and

wherein the first scan line overlaps the third semiconductor layer, and

wherein the electrode layer is electrically connected to the third semiconductor layer.

27. The display apparatus of claim 24 , wherein the first electrode layer is electrically connected to the first gate electrode.

28. The display apparatus of claim 24 , wherein the first gate electrode and the first electrode layer are integrally formed.

29. The display apparatus of claim 24 , wherein the electrode layer and the second electrode layer are on a same layer.

30. The display apparatus of claim 25 , further comprising:

a second scan line extended to cross the fourth semiconductor layer, and

wherein the two fourth gate electrodes are parts of the second scan line overlapping the fourth semiconductor layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 4, 2019
From: KIM, YANGWAN; KWAK, WONKYU; NOH, JAEDU; LEE, JAEYONG
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 050627/0419 →
Priority Claims (1)
KR 10-2014-0100700 · Aug 5, 2014 · national
Continuity (3)
Continuation 15838138 · Dec 11, 2017
Continuation 14660813 · Mar 17, 2015
Related Publication 20190386085A1 · Dec 19, 2019
Cited By (4)
US 12,217,692 US 12,261,177 US 12,274,141 US 12,499,839