Time-dependent defect inspection apparatus
An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.
1. A charged particle beam system for inspecting a wafer, comprising:
a charged particle beam source including circuitry to direct charged particles to one or more areas of the wafer over one or more time sequences; and
a controller including circuitry to:
produce a first set of images of a first area of the one or more areas during a first time sequence of the one or more time sequences; and
process the first set of images to detect a defect in a thin device structure in the wafer, wherein the controller includes circuitry to adjust a time interval between the production of each image in the first set of images.
2. The system of claim 1 , wherein the controller includes circuitry to:
sample a first image and a second image from the first set of images, wherein the first image is sampled at a first time of the first time sequence and the second image is sampled at a second time of the first time sequence; and
compare the first image to the second image to identify the defect at the first area of the one or more areas of the wafer.
3. The system of claim 2 , wherein the first image and the second image comprise voltage contrast levels.
4. The system of claim 3 , wherein the controller includes circuitry to detect a difference between the voltage contrast levels of the first image and the voltage contrast levels of the second image to identify a defect in the thin device structure.
5. The system of claim 1 , wherein the controller includes circuitry to:
produce a second set of images of the first area of the one or more areas during a second time sequence of the one or more time sequences;
sample a first image from the first set of images and a second image from the second set of images; and
compare the first image to the second image to identify the defect at the first area of the one or more areas of the wafer.
6. The system of claim 5 , wherein the first image and the second image are sampled at corresponding times of the first time sequence and a second time sequence.
7. The system of claim 5 , wherein the controller includes circuitry to adjust a time interval between the production of each image in the second set of images.
8. The system of claim 1 , wherein the controller includes circuitry to:
produce a second set of images of a second area of the one or more areas during a second time sequence of the one or more-time sequences, wherein the first area and the second area comprise same device structures;
sample a first image from the first set of images and a second image from the second set of images; and
compare the first image to the second image to identify the defect at the first area or the second area of the one or more areas of the wafer.
9. The system of claim 1 , wherein the charged particle beam source includes circuitry to:
pre-scan the one or more areas of the wafer during a first part of the one or more time sequences; and
inspect the one or more areas of the wafer during a second part of the one or more time sequences.
10. The system of claim 9 , wherein the charged particle beam source includes circuitry to build up one or more surface potentials at the one or more areas of the wafer while performing the pre-scan during the first part of the one or more time sequences.
11. The system of claim 10 , wherein the charged particle beam source performs the pre-scan until a device breakdown occur.
12. The system of claim 1 , wherein the defect comprises an electrical defect associated with an electrical leakage in the thin device structure at the area.
13. The system of claim 12 , wherein the thin device structure comprises a thin oxide that remains after an etching process.
14. A non-transitory computer readable medium storing a set of instructions that is executable by a processor of a charged particle beam system to cause the charged particle beam system, with a charged particle beam source to direct charged particles onto one or more areas of a wafer over one or more time sequences, to perform a method comprising:
producing a first set of images of a first area of the one or more areas during a first time sequence of the one or more time sequences; and
processing the first set of images to detect a defect in a thin device structure in the wafer, wherein the controller includes circuitry to adjust a time interval between the production of each image in the first set of images.