Semiconductor devices and methods of manufacturing semiconductor devices
In one example, a semiconductor device comprises a substrate, a first electronic component on a top side of the substrate, a second electronic component on the top side of the substrate, an encapsulant on the top side of the substrate, contacting a lateral side of the first electronic component and a lateral side of the second electronic component, a conformal shield on a top side of the encapsulant over the first electronic component and having a side shield contacting a lateral side of the encapsulant, and a compartment wall between the first electronic component and the second electronic component and contacting the conformal shield to define a compartment containing the first electronic component and excluding the second electronic component. Other examples and related methods are also disclosed herein.
1. A semiconductor device, comprising:
a substrate;
a first electronic component on a top side of the substrate;
a second electronic component on the top side of the substrate;
an encapsulant on the top side of the substrate, contacting a lateral side of the first electronic component and a lateral side of the second electronic component;
a conformal shield on a top side of the encapsulant over the first electronic component and having a side shield contacting a lateral side of the encapsulant; and
a compartment wall between the first electronic component and the second electronic component and contacting the conformal shield to define a compartment containing the first electronic component and excluding the second electronic component.
2. The semiconductor device of claim 1 , wherein the substrate comprises a ground plane conductor below the compartment and contacting the side shield of the conformal shield.
3. The semiconductor device of claim 1 , wherein the substrate comprises a ground plane conductor below the compartment and electrically connected with the compartment wall through a conductive via.
4. The semiconductor device of claim 1 , wherein the substrate comprises an external interconnect electrically connected with the side shield of the conformal shield.
5. The semiconductor device of claim 1 , wherein the side shield of the conformal shield covers a lateral side of the substrate.
6. The semiconductor device of claim 1 , wherein the substrate comprises a ground plane that is electrically connected with the conformal shield and that covers a majority of the compartment under the first electronic component.
7. The semiconductor device of claim 1 , wherein the substrate comprises a pre-formed substrate.
8. The semiconductor device of claim 1 , wherein the substrate comprises a redistribution layer (RDL) substrate.
9. The semiconductor device of claim 1 , wherein the compartment wall comprises a contiguous conductive material.
10. The semiconductor device of claim 1 , wherein the compartment wall comprises a conductive wire.
11. A semiconductor device, comprising:
a substrate;
a first electronic component on a top side of the substrate;
a second electronic component on the top side of the substrate;
an encapsulant on the top side of the substrate contacting a lateral side of the first electronic component;
a conformal shield on a top side of the encapsulant over the first electronic component and comprising:
a first side shield between the first electronic component and the second electronic component and contacting a first lateral side of the encapsulant, and
a second side shield contacting a second lateral side of the encapsulant;
wherein the conformal shield defines a compartment containing the first electronic component and excluding the second electronic component.
12. The semiconductor device of claim 11 , wherein the substrate comprises a ground plane conductor below the compartment and electrically coupled with the first side shield and the second side shield.
13. The semiconductor device of claim 11 , wherein the second side shield covers a lateral side of the substrate.
14. The semiconductor device of claim 11 , wherein the substrate comprises a ground plane conductor below a majority of an area of the compartment.
15. A semiconductor device, comprising:
a first electronic component on a top side of a substrate;
a second electronic component on the top side of the substrate;
an encapsulant on the top side of the substrate, contacting a lateral side of the second electronic component;
a conformal shield over the second electronic component;
wherein a first compartment is defined external to the conformal shield and containing the first electronic component, and a second compartment is defined internal to the conformal shield and containing the second electronic component;
wherein the first electronic component is unshielded by the conformal shield and the second electronic component is shielded by the conformal shield.
16. The semiconductor device of claim 15 , further comprising:
a trench in the encapsulant between the first electron component and the second electronic component, and
a compartment wall in the trench.
17. The semiconductor device of claim 16 , wherein the conformal shield conforms to a contour of the compartment wall exposed by the trench.
18. The semiconductor device of claim 16 , wherein the compartment wall comprises a conductive wire.
19. The semiconductor device of claim 16 , wherein the encapsulant contacts a lateral side of the first electronic component.
20. The semiconductor device of claim 16 , wherein the first compartment is free of the encapsulant.