IP Library Granted Patent US 11,042,487
Granted Patent B2
US 11,042,487 · App. 16/555,663 · Granted Jun 22, 2021

Memory system and method for controlling nonvolatile memory

Inventors: Hideki Yoshida (Yokohama Kanagawa, JP); Shinichi Kanno (Tokyo, JP)
Assignee: Toshiba Memory Corporation
G06F12/1009G06F12/0246G06F2212/1016G06F2212/657G06F2212/7201G06F2212/7203
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Quick Facts
Patent No.
US 11,042,487
App. No.
16/555,663
Granted
Jun 22, 2021
Kind
B2
Abstract

According to one embodiment, a memory system receives a write request specifying a first logical address to which first data is to be written, and a length of the first data, from a host. The memory system writes the first data to a nonvolatile memory, and stores a first physical address indicating a physical storage location on the nonvolatile memory to which the first data is written, and the length of the first data, in an entry of a logical-to-physical address translation table corresponding to the first logical address. When the memory system receives a read request specifying the first logical address, the memory system acquires the first physical address and the length from the address translation table, and reads the first data from the nonvolatile memory.

Claims (47)

1. A memory system connectable to a host, the memory system comprising:

a nonvolatile memory; and

a controller electrically connected to the nonvolatile memory, the controller being configured to:

manage a logical-to-physical address translation table including a plurality of entries corresponding to a plurality of logical addresses respectively;

receive, from the host, a write request specifying a first logical address and a length of first data, the first logical address being associated with the first data;

write the first data to the nonvolatile memory; and

store, in an entry of the logical-to-physical address translation table corresponding to the first logical address, a first physical address and the length of the first data, the first physical address indicating a physical location of the nonvolatile memory to which the first data is written.

2. The memory system of claim 1 , wherein

the controller is further configured to:

receive, from the host, a read request specifying the first logical address;

acquire the first physical address and the length from the logical-to-physical address translation table; and

read the first data from the nonvolatile memory on the basis of the acquired first physical address and the acquired length.

3. The memory system of claim 1 , wherein the physical location of the nonvolatile memory is represented by a block number of a block in the nonvolatile memory and a location inside the block.

4. The memory system of claim 1 , wherein the physical location of the nonvolatile memory is represented by a block number of a block in the nonvolatile memory, a page number of a page in the block, and a location inside the page.

5. The memory system of claim 1 , wherein a length of data corresponding to a unit of each logical address is variable.

6. The memory system of claim 1 , wherein

when a first data portion of the first data is written to a first block of the nonvolatile memory and a second data portion of the first data is written to a second block of the nonvolatile memory,

the controller is further configured to store a first physical address, a length of the first data portion, a second physical address, and a length of the second data portion, in an entry of the logical-to-physical address translation table corresponding to the first logical address, the first physical address indicating a physical location of the first block to which the first data portion is written, the second physical address indicating a physical location of the second block to which the second data portion is written.

7. The memory system of claim 1 , wherein

the logical-to-physical address translation table includes a first logical-to-physical address translation table and a second logical-to-physical address translation table,

the first logical-to-physical address translation table includes an entry, the entry of the first logical-to-physical address translation table including a location of the second logical-to-physical address translation table and not including information as to a size of the second logical-to-physical address translation table, and

the second logical-to-physical address translation table includes a plurality of entries, each of the entries of the second logical-to-physical address translation table including a logical address associated with data and a length of the data.

8. The memory system of claim 1 , wherein

a physical storage region of the nonvolatile memory is allocated to the first logical address, and

the physical storage region allocated to the first logical address has a size corresponding to the length of the first data.

9. A method of controlling a nonvolatile memory, the method comprising:

managing a logical-to-physical address translation table including a plurality of entries corresponding to a plurality of logical addresses respectively;

receiving, from a host, a write request specifying a first logical address and a length of first data, the first logical address being associated with the first data;

writing the first data to the nonvolatile memory; and

storing, in an entry of the logical-to-physical address translation table corresponding to the first logical address, a first physical address and the length of the first data, the first physical address indicating a physical location of the nonvolatile memory to which the first data is written.

10. The method of claim 9 , further comprising:

receiving, from the host, a read request specifying the first logical address;

acquiring the first physical address and the length from the logical-to-physical address translation table; and

reading the first data from the nonvolatile memory on the basis of the acquired first physical address and the acquired length.

11. The method of claim 9 , wherein the physical location of the nonvolatile memory is represented by a block number of a block in the nonvolatile memory and a location inside the block.

12. The method of claim 9 , wherein the physical location of the nonvolatile memory is represented by a block number of a block in the nonvolatile memory, a page number of a page in the block, and a location inside the page.

13. The method of claim 9 , wherein a length of data corresponding to a unit of each logical address is variable.

14. The method of claim 9 , further comprising:

when a first data portion of the first data is written to a first block of the nonvolatile memory and a second data portion of the first data is written to a second block of the nonvolatile memory,

storing a first physical address, a length of the first data portion, a second physical address, and a length of the second data portion, in an entry of the logical-to-physical address translation table corresponding to the first logical address, the first physical address indicating a physical location of the first block to which the first data portion is written, the second physical address indicating a physical location of the second block to which the second data portion is written.

15. The method of claim 9 , wherein

the logical-to-physical address translation table includes a first logical-to-physical address translation table and a second logical-to-physical address translation table,

the first logical-to-physical address translation table includes an entry, the entry of the first logical-to-physical address translation table including a location of the second logical-to-physical address translation table and not including information as to a size of the second logical-to-physical address translation table, and

the second logical-to-physical address translation table includes a plurality of entries, each of the entries of the second logical-to-physical address translation table including a logical address associated with data and a length of the data.

16. The method of claim 9 , wherein

a physical storage region of the nonvolatile memory is allocated to the first logical address, and

the physical storage region allocated to the first logical address has a size corresponding to the length of the first data.

Assignments (3)
CHANGE OF NAME AND ADDRESS Recorded Feb 4, 2022
From: K.K PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 058957/0124 →
CHANGE OF NAME AND ADDRESS Recorded Jan 31, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058905/0582 →
MERGER Recorded Jan 31, 2022
From: TOSHIBA MEMORY CORPORATION
To: K.K PANGEA
Reel/Frame 058946/0675 →