METHOD TO OBTAIN SiC CLASS OF FILMS OF DESIRED COMPOSITION AND FILM PROPERTIES
Provided are methods and systems for providing silicon carbide class of films. The composition of the silicon carbide film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon carbide films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon carbide film. The one or more radicals can be formed in a remote plasma source.
1 - 11 . (canceled)
12 . A method of depositing a silicon-containing film on a substrate, the method comprising:
providing the substrate;
exposing the substrate to at least one silicon-containing precursor, the at least one silicon-containing precursor comprising a disiloxane or trisiloxane;
exposing the substrate to a reactant to react with the silicon-containing precursor and form at least a portion of a silicon-containing film; and
alternating between exposing of the substrate to the silicon-containing precursor and the exposing of the substrate to the reactant in cycles until a desired thickness of the silicon-containing film is deposited.
13 . The method of claim 12 , wherein a plasma is ignited during the exposing of the substrate to the reactant.
14 . The method of claim 13 , wherein the plasma is generated remotely.
15 . The method of claim 12 , wherein the silicon-containing film comprises oxygen and silicon.
16 . The method of claim 12 , wherein the silicon-containing film comprises silicon carbide doped with oxygen.
17 . The method of claim 12 , wherein the at least one silicon-containing precursor is selected from the group consisting of pentamethyldisiloxane (PMDSO), tetramethyldisiloxane (TMDSO), hexamethyltrisiloxane, and heptamethyltrisiloxane.
18 . The method of claim 12 , wherein a chamber housing the substrate is purged between exposing the substrate to the silicon-containing precursor and exposing the substrate to the reactant.
19 . The method of claim 12 , wherein the at least one silicon-containing precursor further comprises an organo-silicon precursor.
20 . The method of claim 19 , wherein the organo-silicon precursor is selected from the group consisting of siloxanes, alkoxy silanes, and alkylsilanes.
21 . The method of claim 20 , wherein the organo-silicon precursor selected is a caged siloxane.
22 . The method of claim 20 , wherein the organo-silicon precursor selected is a linear siloxane.
23 . The method of claim 12 , wherein the reactant comprises radical species generated from igniting a plasma outside of a chamber housing the substrate.