Method for processing a workpiece
Processes for providing nitridation on a workpiece, such as a semiconductor, are provided. In one example implementation, a method can include supporting a workpiece on a workpiece support. The method can include exposing the workpiece to species generated from a capacitively coupled plasma to provide nitridation on the workpiece. The method can also include exposing the workpiece to species generated form an inductively coupled plasma to provide nitridation on the workpiece.
1. A method of processing a workpiece in a plasma processing apparatus, the plasma processing apparatus comprising a processing chamber having an interior operable to receive a process gas and a workpiece support operable to support a workpiece, the method comprising:
placing the workpiece on the workpiece support in the processing chamber;
generating one or more species using a capacitively coupled plasma induced from a first process gas using a capacitively coupled plasma source;
exposing the workpiece to the one or more species generated using the capacitively coupled plasma from the first process gas to provide nitridation on the workpiece,
generating one or more species using an inductively coupled plasma induced from a second process gas using an inductively coupled plasma source; and
exposing the workpiece to the one or more species generated using the inductively coupled plasma from the second process gas to increase a nitridation depth on the workpiece.
2. The method of claim 1 , wherein the first process gas comprises a nitrogen containing gas.
3. The method of claim 2 , wherein the nitrogen containing gas comprises N 2 , NH 3 , or combinations thereof.
4. The method of claim 1 , wherein the second process gas comprises a nitrogen containing gas.
5. The method of claim 4 , wherein the nitrogen containing gas comprises N 2 , NH 3 , or combinations thereof.
6. The method of claim 1 , wherein the second process gas comprises a fluorine containing gas.
7. The method of claim 6 , wherein the fluorine containing gas comprises CF 4 , NF 3 , CH 3 F, or mixtures thereof.
8. The method of claim 1 , wherein the nitridation depth is from about 5 Å to about 140 Å.
9. The method of claim 1 , wherein the plasma processing apparatus comprises a grounded electrode disposed between the inductively coupled plasma source and the interior of the processing chamber, wherein the capacitively coupled plasma source comprises a RF bias electrode, wherein the grounded electrode has a surface area that is greater than a surface area of the RF bias electrode.
10. The method of claim 9 , wherein the grounded electrode has a surface area that is at least two times greater than the surface area of the RF bias electrode.
11. The method of claim 1 , wherein the workpiece comprises at least one layer of silicon.
12. A method of processing a workpiece in a plasma processing apparatus, the plasma processing apparatus comprising a processing chamber having an interior operable to receive a process gas, a workpiece support operable to support a workpiece, at least one first plasma source disposed over the process chamber interior, and a second plasma source comprising a bias source coupled to a bias electrode in the workpiece support the method comprising:
placing a workpiece on the workpiece support within the interior of the processing chamber of the processing apparatus;
admitting a first process gas into the interior of the processing chamber;
energizing the bias source to generate one or more species from a first process gas in the interior of the processing chamber;
exposing the workpiece to the one or more species to provide a nitridation depth on the workpiece;
admitting a second process gas into the interior of the processing chamber;
energizing the first plasma source to generate one or more species from the second process gas in the interior of the processing chamber; and
exposing the workpiece to the one or more species to increase the nitridation depth on the workpiece.
13. The method of claim 12 , wherein energizing the bias source to generate one or more species in the interior of the processing chamber occurs before energizing the first plasma source to generate one or more species in the interior of the processing chamber.
14. The method of claim 12 , wherein the first process gas comprises a nitrogen containing gas.
15. The method of claim 12 , wherein the second process gas comprises a nitrogen containing gas.
16. The method of claim 12 , wherein the second process gas comprises a fluorine containing gas.
17. The method of claim 12 , wherein the nitridation depth is from about 5 Å to about 140 Å.
18. The method of claim 12 , wherein the plasma processing apparatus comprises a grounded electrode disposed between the first plasma source and the interior of the processing chamber, wherein the grounded electrode has a surface area that is greater than a surface area of the bias electrode.