Patent Assignment
Reel/Frame 055370/0755
Assignment of Assignor's Interest
Recorded: 2021-02-23
Received: 2021-02-23
Pages: 7
Assignor
MATTSON TECHNOLOGY, INC.
Executed: 2021-02-19
Assignees
MATTSON TECHNOLOGY, INC.
47131 BAYSIDE PARKWAY, FREMONT, CA, 94538, UNITED STATES
BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD
NO. 8 BUILDING, NO. 28 JINGHAI ER RD, ECONOMIC AND TECHNICAL DEVELOPMENT ZONE, BEJING, CNX, 100176, CHINA
Covered Properties
(55)
Outer Gas Channel Insert
Application:
63/132,530 →
Cooled Faraday Shield for ICP Source
Application:
63/130,988 →
Centerless Rotational Support for Thermal Processing
Application:
63/130,982 →
Workpiece Processing Apparatus with Thermal Processing Systems
Application:
63/130,969 →
Configurable Faraday Shield
Application:
63/130,990 →
Induction Coil Assembly for Plasma Processing Apparatus
Application:
63/131,026 →
Workpiece Processing Apparatus with Gas Showerhead Assembly
Application:
63/129,079 →
Workpiece Processing Apparatus with Vacuum Anneal Reflector Control
Application:
63/129,108 →
Workpiece Processing Apparatus with Thermal Processing Systems
Application:
63/124,962 →
Systems and Methods for Removal of Hardmask
Application:
17/120,382 →
Arc Lamp With Forming Gas For Thermal Processing Systems
Application:
63/117,597 →
Control System For Adaptive Control Of A Thermal Processing System
Application:
17/084,228 →
Selective Etch Process Using Hydrofluoric Acid and Ozone Gases
Application:
17/071,293 →
Plasma Processing Apparatus With Post Plasma Gas Injection
Application:
17/026,401 →
Methods for the Treatment of Workpieces
Application:
17/024,851 →
Plasma Strip Tool with Movable Insert
Application:
63/071,418 →
Spacer Etching Process
Application:
17/001,751 →
Methods For Processing a Workpiece Using Fluorine Radicals
Application:
17/001,728 →
Rapid Thermal Processing System with Cooling System
Application:
63/066,854 →
Rapid Thermal Processing System with Cooling System
Application:
63/066,856 →
Silicon Oxide Selective Dry Etch Process
Application:
16/904,669 →
Processing of Workpieces Using Ozone Gas and Hydrogen Radicals
Application:
63/028,786 →
Methods And Apparatus For Pulsed Inductively Coupled Plasma For Surface Treatment Processing
Application:
63/024,540 →
Systems And Methods For Transportation Of Replaceable Parts In a Vacuum Processing Apparatus
Application:
15/930,943 →
End Effectors for Moving Workpieces and Replaceable Parts Within a System for Processing Workpieces Under Vacuum
Application:
15/930,924 →
Focus Ring Adjustment Assembly of a System for Processing Workpieces Under Vacuum
Application:
15/930,910 →
Plasma Processing Apparatus Having a Focus Ring Adjustment Assembly
Application:
15/930,874 →
Methods And Apparatus For Pulsed Inductively Coupled Plasma For Surface Treatment Processing
Application:
63/018,566 →
SELECTIVE SiN LATERAL RECESS WITH BYPRODUCT-ENABLED VERTICAL LOADING CONTROL
Application:
63/002,488 →
Processing of Workpieces Using Flourocarbon Plasma
Application:
63/002,571 →
SELECTIVE SiN LATERAL RECESS WITH BYPRODUCT-ENABLED VERTICAL LOADING CONTROL
Application:
62/990,752 →
Transmission-Based Temperature Measurement of a Workpiece in a Thermal Processing System
Application:
62/983,064 →
Support Structure for Thermal Processing Systems
Application:
62/983,032 →
Water Vapor Based Fluorine Containing Plasma For Removal Of Hardmask
Application:
16/598,423 →
Method for Processing a Workpiece
Application:
16/556,938 →
Enhanced Ignition in Inductively Coupled Plasmas For Workpiece Processing
Application:
16/547,724 →
Post Etch Defluorination Process
Application:
16/403,722 →
Apparatus for Thermally Treating Semiconductor Substrates
Application:
12/251,916 →
Determining the Position of a Semiconductor Substrate on a Rotation Device
Application:
11/597,178 →
Method and Apparatus for Thermally Treating Substrates
Application:
11/446,675 →
Process for Determining the Temperature of a Semiconductor Wafer in a Rapid Heating Unit
Application:
10/540,613 →
Method and Apparatus for Thermally Treating Disk-Shaped Substrates
Application:
10/540,614 →
Method of Producing a Calibration Wafer
Application:
10/536,788 →
Apparatus and Method for Measuring the Temperature of Substrates
Application:
11/021,915 →
Method and Device for Thermal Treatment of Substrates
Application:
10/478,754 →
Method for Thermally Treating a Substrate That Comprises Several Layers
Application:
10/487,573 →
Method and apparatus for the production of process gas that includes water vapor and hydrogen formed by burning oxygen in a hydrogen-rich environment
Application:
10/476,136 →
Device for Thermal Treatment of Substrates
Application:
10/182,594 →
Adjusting of Defect Profiles in Crystal or Crystalline-Like Structures
Application:
10/276,767 →
Method for the Removing of Adsorbed Molecules from a Chamber
Application:
10/220,001 →
Method and Apparatus for the Thermal Treatment of Substrates
Application:
10/111,737 →
Apparatus and Method for the Thermal Treatment of Substrates
Application:
09/979,646 →
Device and Method for Measuring the Temperature of Substrates
Application:
09/913,269 →
Method and Apparatus for Calibrating Temperature Measurements Independent of Emissivity
Application:
09/744,880 →
Method of measuring electromagnetic radiation
Application:
09/789,942 →