Methods for processing a workpiece using fluorine radicals

1. A method for processing a workpiece, the workpiece comprising at least one silicon layer and at least one silicon germanium layer, the method comprising conducting an etch process on the workpiece, the etch process comprising:

placing the workpiece on a workpiece support in a processing chamber;

generating one or more species from a first process gas using a plasma induced in a plasma chamber;

filtering the one or more species to create a filtered mixture, the filtered mixture comprising one or more fluorine radicals, carbon radicals, and hydrogen radicals;

exposing the workpiece to the filtered mixture to form a first passivation layer on the at least one silicon layer and a second passivation layer on the at least one silicon germanium layer the first passivation layer comprising SiC x H y F z , wherein x is greater than or equal to 1 and less than or equal to 10, wherein y is greater than or equal to 1 and less than or equal to 10, wherein z is greater than or equal to 1 and less than or equal to 10, the second passivation layer comprising GeCxHyFz wherein x is greater than or equal to 1 and less than or equal to 10, wherein y is greater than or equal to 1 and less than or equal to 10, wherein z is greater than or equal to 1 and less than or equal to 10; and

exposing the workpiece to the filtered mixture to remove at least a portion of the at least one silicon layer, wherein the at least one silicon layer is removed at an etch rate that is faster than an etch rate of the at least one silicon germanium layer.

2. The method of claim 1 , wherein the first process gas comprises a fluorine-containing gas.

3. The method of claim 2 , wherein the fluorine-containing gas is selected from the group consisting of CF 4 , NF 3 , CHF 3 , CH 2 F 2 , CH 3 F, and CF x H y , wherein x is greater than or equal to 1 and less than or equal to 10, wherein y is greater than or equal to 1 and less than or equal to 10.

4. The method of claim 1 , wherein the first process gas comprises a hydrocarbon-containing gas.

5. The method of claim 4 , wherein the hydrocarbon-containing gas is selected from the group consisting of CH 4 , C 4 F 8 , and C n H n+2 , where n is greater than or equal to 1 and less than or equal to 10 or wherein the hydrocarbon-containing gas has a chemical formula of C n H 2n , where n is greater than or equal to 2 and n is less than or equal to 10.

6. The method of claim 1 , wherein the first process gas further comprises a carrier gas.

7. The method of claim 6 , wherein the carrier gas comprises helium, argon, xenon, or neon.

8. The method of claim 1 , wherein a ratio of etch rate of the at least one silicon layer to the etch rate of the at least one silicon germanium layer is equal to or greater than 20:1.

9. The method of claim 1 , wherein exposing the workpiece to the filtered mixture forms a first layer on the at least one silicon layer and a second layer on the at least one silicon germanium layer.

10. The method of claim 9 , wherein the first layer comprises silicon, fluorine, hydrogen, and carbon, and wherein the second layer comprises germanium, fluorine, hydrogen, and carbon.

11. The method of claim 9 , wherein the first layer and second layer passivate the surface of the at least one silicon layer and the at least one silicon germanium layer such that the etch rate of the at least one silicon layer is faster than the etch rate of the at least one silicon germanium layer.

12. The method of claim 9 , wherein subsequent to exposing the workpiece to the filtered mixture, the method comprises performing a plasma stripping process, the plasma stripping process comprising:

generating one or more species from a second process gas using a plasma induced in the plasma chamber;

filtering the one or more species to create a filtered mixture; and

exposing the workpiece to the filtered mixture to remove at least a portion of the first layer formed on the silicon and to remove at least a portion of the second layer formed on the silicon germanium.

13. The method of claim 1 , wherein filtering the one or more radicals to create a filtered mixture comprises filtering the one or more radicals via a separation grid separating the plasma chamber from the processing chamber.

14. The method of claim 1 , wherein the processing chamber is separated from the plasma chamber by a separation grid.

15. The method of claim 13 , further comprising admitting a fluorine-containing gas through one or more gas injection ports at or below the separation grid.

16. The method of claim 13 , further comprising admitting a hydrocarbon-containing gas through one or more gas injection ports at or below the separation grid.

17. The method of claim 1 , wherein the plasma is induced via an inductively coupled plasma source.

18. A method of processing a semiconductor workpiece, the workpiece comprising a semiconductor material, the semiconductor material comprising silicon and silicon germanium, the method comprising performing a radical based surface treatment process on the semiconductor material, the radical based surface treatment process comprising:

placing the workpiece in a processing chamber;

generating one or more fluorine radicals in a mixture in a plasma chamber by inducing a plasma in a process gas with an inductively coupled plasma source;

generating one or more organic radicals in the mixture in the plasma chamber with the inductively coupled plasma source;

exposing the workpiece to the one or more fluorine radicals and the one or more organic radicals to form a first passivation layer on the at least one silicon layer and a second passivation layer on the at least one silicon germanium layer, the first passivation layer comprising SiC x H y F z , wherein x is greater than or equal to 1 and less than or equal to 10, wherein y is greater than or equal to 1 and less than or equal to 10, wherein z is greater than or equal to 1 and less than or equal to 10, the second passivation layer comprising GeCxHyFz wherein x is greater than or equal to 1 and less than or equal to 10, wherein y is greater than or equal to 1 and less than or equal to 10, wherein z is greater than or equal to 1 and less than or equal to 10; and

exposing the semiconductor material to the fluorine radicals and the organic radicals to remove silicon at an etch rate that is faster than an etch rate of the silicon germanium.

19. The method of claim 18 , wherein exposing the workpiece to the mixture forms a first layer on the silicon on the workpiece and a second layer on the silicon germanium on the workpiece.

20. The method of claim 19 , wherein the first layer comprises silicon, carbon, hydrogen, and fluorine, and wherein the second layer comprises germanium, carbon, hydrogen, and fluorine.