Nonvolatile memory device having multiple numbers of channel layers
A nonvolatile memory device according to an embodiment includes a substrate, a cell electrode structure disposed on the substrate and including interlayer insulating layers and gate electrode layers that are alternately stacked, a trench penetrating the cell structure on the substrate, a charge storage structure disposed on a sidewall surface of the trench, and a channel structure disposed adjacent to the charge storage structure and extending in a direction parallel to the sidewall surface. The channel structure includes a separate hole conduction layer and an adjacent and separate electron conduction layer. A control channel layer disposed on a control dielectric layer is a portion of the electron conduction layer configured to electrically connect to the channel structure, and to the charge storage structure. A control dielectric layer and a charge barrier layer are discrete but contiguous from the control channel structure to the charge storage structure.
1. A nonvolatile memory device comprising:
a substrate;
a cell electrode structure disposed on the substrate and including interlayer insulating layers and gate electrode layers that are alternately stacked;
a trench penetrating the cell electrode structure on the substrate;
a charge storage structure disposed on a sidewall surface of the trench; and
a channel structure disposed adjacent to the charge storage structure and extending in a direction parallel to the sidewall surface,
wherein the channel structure comprises a separate hole conduction layer and an adjacent and separate electron conduction layer.
2. The nonvolatile memory device of claim 1 ,
wherein the charge storage structure comprises a charge barrier layer, a charge trap layer and a charge tunneling layer that are sequentially disposed on the sidewall surface.
3. The nonvolatile memory device of claim 1 ,
wherein the hole conduction layer is disposed on the charge storage structure, and
wherein the electron conduction layer is disposed on the hole conduction layer.
4. The nonvolatile memory device of claim 3 ,
wherein the hole conduction layer is configured for a memory erase operation, and
wherein the electron conduction layer is configured for a memory program operation and disposed on a control dielectric layer of an adjacent control structure.
5. The nonvolatile memory device of claim 1 ,
wherein a hole mobility of the hole conduction layer is greater than a hole mobility of the electron conduction layer, and
wherein an electron mobility of the electron conduction layer is greater than an electron mobility of the hole conduction layer.
6. The nonvolatile memory device of claim 1 ,
wherein the hole conduction layer comprises a semiconductor material selected from at least one of silicon (Si), germanium (Ge), silicon germanium (SiGe), gallium arsenic (GaAs) and indium gallium arsenic (InGaAs).
7. The nonvolatile memory device of claim 1 ,
wherein the electron conduction layer comprises indium-gallium-zinc (In-Ga—Zn) oxide.
8. The nonvolatile memory device of claim 1 , further comprising:
a control electrode structure disposed over or below the cell electrode structure within the trench and including an interlayer dielectric layer and a control electrode layer;
a control dielectric layer disposed to be in contact with the control electrode structure on a trench; and
a control channel layer disposed adjacent to the control dielectric layer and electrically connected to the channel structure.
9. The nonvolatile memory device of claim 8 ,
wherein the control channel layer is a portion of the electron conduction layer configured to extend along the control dielectric layer on the sidewall of the trench.
10. A nonvolatile memory device comprising:
a cell electrode structure disposed on a substrate and including insulating interlayers and gate electrode layers that are alternately stacked;
a trench penetrating the cell electrode structure perpendicular to the substrate, the trench having a sidewall surface;
a charge storage structure disposed on and parallel to the sidewall surface of the trench;
a channel structure disposed adjacent to the charge storage structure, and comprising a separate hole conduction layer and an adjacent and separate electron conduction layer; and
a control channel structure disposed over or below the cell electrode structure within the trench and including a interlayer insulating layer and a control channel layer,
wherein the control channel layer is a portion of the electron conduction layer and is configured to electrically connect to the channel structure, and to the charge storage structure.
11. The non-volatile memory device of claim 10 , further comprising the control dielectric layer and the charge barrier layer being discrete but contiguous from the control channel structure to the charge storage structure.
12. The non-volatile memory device of claim 10 , wherein the control channel further comprises an indium gallium arsenic (InGaAs) layer underneath an indium-gallium-zinc-oxide (IGZO) layer configured to decrease a leakage current through the cell electrode structure with reference to a leakage current through a doped polysilicon cell electrode.
13. The non-volatile memory device of claim 10 , wherein a thickness of the control channel structure is equal to or less than a thickness of a doped polysilicon control channel structure.