IP Library Granted Patent US 11,183,490
Granted Patent B2
US 11,183,490 · App. 16/558,679 · Granted Nov 23, 2021

Multi-layer power converter with devices having reduced lateral current

Inventor: David Giuliano (Bedford, NH)
Assignee: pSemi Corporation
H01L25/16H01L23/481H01L23/5223H01L23/5227H01L23/64H01L23/642H01L27/016H01L27/0688H01L27/16H01L28/40H01L28/90H02M3/07H05K1/0298H05K1/115H01L2224/0401H01L2224/0554H01L2224/0557H01L2224/05572H01L2224/16225H01L2224/16265H01L2924/19103H01L2924/19104H01L2924/19105H02M3/077
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Quick Facts
Patent No.
US 11,183,490
App. No.
16/558,679
Filed
Sep 3, 2019
Granted
Nov 23, 2021
Kind
B2
Art Unit
2895
USPC
361/763
Abstract

Various embodiments of energy storage elements for use in power converters are described. In one example embodiment, briefly, an integrated circuit (IC) for use with a power converter may comprise a first layer comprising a first set of devices disposed on a device face thereof; a second layer comprising a second set of devices disposed on a device face thereof; a first interconnect structure to be disposed between the first layer and an electrical interface, the first interconnect structure to electrically couple the first set of devices to one or more thru vias; and a second interconnect structure to be disposed between the first layer and the second layer, the second interconnect structure to electrically couple the second set of devices to the one or more thru vias. Likewise, in some instances, one or more thru vias may extend through at least one of the following: the first layer; the second layer; or any combination thereof.

Claims (30)

1. An integrated circuit (IC) for use with a power converter, the IC comprising:

a first layer comprising a first set of devices disposed on a device face thereof;

a second layer comprising a second set of devices disposed on a device face thereof;

a first interconnect structure to be disposed between the first layer and an electrical interface, the first interconnect structure to electrically couple the first set of devices to one or more thru vias; and

a second interconnect structure to be disposed between the first layer and the second layer, the second interconnect structure to electrically couple the second set of devices to the one or more thru vias,

wherein the one or more thru vias to extend through at least one of the following:

the first layer; the second layer; or any combination thereof.

2. The IC of claim 1 , wherein the first layer to comprise an active layer and the second layer to comprise a passive layer.

3. The IC of claim 2 , wherein the first set of devices to comprise a set of active devices and the second set of devices to comprise a set of passive devices.

4. The IC of claim 1 , wherein the first layer to comprise a passive layer and the second layer to comprise an active layer.

5. The IC of claim 4 , wherein the first set of devices to comprise a set of passive devices and the second set of devices to comprise a set of active devices.

6. The IC of claim 1 , wherein the device face of the first layer to face away from the device face of the second layer or to face the device face of the second layer.

7. The IC of claim 1 , wherein the electrical interface to provide electrical conductivity between the power converter and a load.

8. The IC of claim 7 , wherein the first and the second layer to form a stack of layers to be disposed on the electrical interface.

9. The IC of claim 8 , wherein the stack of layers to vertically integrate the first set of devices with the second set of devices.

10. The IC of claim 1 , wherein the first layer to be coupled to the electrical interface by one or more solder bumps disposed therebetween.

11. The IC of claim 1 , and further comprising one or more additional layers having one or more sets of devices to be disposed on respective device faces of the one or more additional layers.

12. The IC of claim 11 , wherein the one or more additional layers to comprise at least one passive layer comprising a passive set of devices to be disposed on a device face thereof.

13. The IC of claim 12 , wherein the at least one passive layer to be disposed between the first layer and the second layer.

14. The IC of claim 12 , wherein the at least one passive layer to be disposed between the electrical interface and one of the first layer or the second layer.

15. The IC of claim 1 , wherein the first set of devices comprises a set of capacitors and the second set of devices comprises a set of switches.

16. The IC of claim 15 , wherein the set of capacitors to be interconnected via the one or more thru vias to the set of switches to form a switch capacitor arrangement, a particular capacitor of the set of capacitors to be arranged in proximity to a particular switch of the set of switches so as to shorten a current path between the particular capacitor and the particular switch.

17. An apparatus comprising:

an electrical interface and a stack of layers disposed on the electrical interface, the stack of layers to include an active layer and a passive layer, the passive layer to be vertically integrated with the active layer, the active and the passive layers to include respective device faces and device-free faces opposite the device faces; and

a plurality of interconnections to electrically couple the active layer and the passive layer to one or more thru vias, the one or more thru vias to extend through the active and the passive layers,

wherein the plurality of interconnections to comprise a first interconnect structure to be disposed on the device face of the passive layer and a second interconnect structure to be disposed on the device face of the active layer, the device face of the active layer to face away from the device face of the passive layer, and

wherein the active and the passive layers to be wafer-bonded at the respective device-free faces.

18. The apparatus of claim 17 , wherein the active layer to comprise a plurality of switches and the passive layer to comprise a plurality of capacitors to be interconnected via the one or more thru vias to the plurality of switches to form a switched capacitor circuit.

19. The apparatus of claim 18 , wherein the plurality of switches and the plurality of capacitors to be arranged within the stack of layers so as to reduce a vertical and a lateral distance between the plurality of switches and the plurality of capacitors.

20. The apparatus of claim 19 , wherein the arrangement to shorten a current path between the plurality of switches and the plurality of capacitors so as to reduce energy loss during operation of the switched capacitor circuit.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2020
From: GIULIANO, DAVID
To: ARCTIC SAND TECHNOLOGIES, INC.
Reel/Frame 052239/0110 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2020
From: ARCTIC SAND TECHNOLOGIES, INC.
To: PEREGRINE SEMICONDUCTOR CORPORATION
Reel/Frame 052244/0903 →
CHANGE OF NAME Recorded Mar 26, 2020
From: PEREGRINE SEMICONDUCTOR CORPORATION
To: PSEMI CORPORATION
Reel/Frame 052244/0910 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 3, 2019
From: GIULIANO, DAVID
To: ARCTIC SAND TECHNOLOGIES, INC.
Reel/Frame 050248/0243 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 3, 2019
From: ARCTIC SAND TECHNOLOGIES, INC.
To: PEREGRINE SEMICONDUCTOR CORPORATION
Reel/Frame 050248/0305 →
CHANGE OF NAME Recorded Sep 3, 2019
From: PEREGRINE SEMICONDUCTOR CORPORATION
To: PSEMI CORPORATION
Reel/Frame 050255/0362 →
Continuity (6)
Continuation 16139583 · Sep 24, 2018
Continuation 15277056 · Sep 27, 2016
Continuation 14294642 · Jun 3, 2014
Division 13654113 · Oct 17, 2012
Provisional Application 61548360 · Oct 18, 2011
Related Publication 20200243495A1 · Jul 30, 2020