Single crystal growth crucible and single crystal growth method
The present invention provides a single crystal growth crucible and a single crystal growth method which can suppress the recrystallization of the raw material gas which has been sublimated on the surface of the raw material and can suppress the generation of different polytypes in single crystal growth. The single crystal growth crucible includes an inner bottom, a crystal mounting part, and a deposition preventing member, wherein a raw material is provided in the inner bottom, the crystal mounting part faces the inner bottom, the deposition preventing member has a first surface comprising metal carbide, a first surface is disposed to face the crystal mounting part, the deposition preventing member is disposed in a central area of the inner bottom in a plan view from the crystal mounting part, and the first surface is disposed in accordance with the position of the surface of the raw material.
1. A single crystal growth crucible, comprising:
an inner peripheral surface,
an inner bottom,
a crystal mounting part, and
a deposition preventing member,
wherein a raw material is provided in the inner bottom,
the crystal mounting part faces the inner bottom,
the deposition preventing member is located between the inner bottom and the crystal mounting part,
the whole deposition preventing member consists of metal carbide,
the crystal mounting part has a crystal mounting part surface,
a first surface of the deposition preventing member is disposed to face the crystal mounting part surface,
the raw material has a raw material surface,
the inner bottom has an inner bottom surface,
the first surface of the deposition preventing member, the crystal mounting part surface, the raw material surface, and the inner bottom surface are parallel to each other and are coaxially arranged such that a virtual straight line passes axially through a center portion of each of these surfaces,
the virtual straight line passes through a solid portion of the deposition preventing member,
the inner bottom surface has an inner bottom surface area,
the first surface of the deposition preventing member has a first surface area,
the first surface area is 80% or more of the inner bottom surface area,
the deposition preventing member has a bottom surface that is a lower-most portion of the deposition preventing member in a direction of the inner bottom surface,
the bottom surface of the deposition preventing member directly contacts the raw material and does not directly contact the inner bottom surface, and
the first surface of the deposition preventing member is an uppermost surface of the deposition preventing member, and the first surface of the deposition preventing member does not contact the inner peripheral surface of the growth crucible.
2. The single crystal growth crucible according to claim 1 ,
wherein the first surface on the crystal mounting part side of the deposition preventing member is in a range within 20 mm from the raw material surface of the raw material.
3. The single crystal growth crucible according to claim 1 ,
wherein the deposition preventing member is a member mounted on the raw material after the raw material is provided in the inner bottom.
4. The single crystal growth crucible according to claim 1 ,
wherein the metal carbide is tantalum carbide.
5. The single crystal growth crucible according to claim 1 ,
wherein the deposition preventing member is supported only by the raw material.
6. The single crystal growth crucible according to claim 5 ,
wherein the deposition preventing member is configured to be placed on the raw material after the raw material is provided in the inner bottom.
7. A single crystal growth crucible, comprising:
an inner peripheral surface,
an inner bottom,
a crystal mounting part, and
a deposition preventing member,
wherein a raw material is provided in the inner bottom,
the crystal mounting part faces the inner bottom,
the deposition preventing member is located between the inner bottom and the crystal mounting part,
the whole deposition preventing member consists of metal carbide,
the crystal mounting part has a crystal mounting part surface,
a first surface of the deposition preventing member is disposed to face the crystal mounting part surface,
the raw material has a raw material surface,
the inner bottom has an inner bottom surface,
the crystal mounting part surface, the first surface of the deposition preventing member, the raw material surface, and the inner bottom surface are parallel to each other and are coaxially arranged in this order from a top side of the single crystal growth crucible to a bottom side of the single crystal growth crucible,
the inner bottom surface has an inner bottom surface area,
the first surface of the deposition preventing member has a first surface area,
the first surface area is 80% or more of the inner bottom surface area,
the deposition preventing member has a bottom surface that is a lower-most portion of the deposition preventing member in a direction of the inner bottom surface,
the bottom surface of the deposition preventing member directly contacts the raw material and does not directly contact the inner bottom surface, and
the first surface of the deposition preventing member is an uppermost surface of the deposition preventing member, and the first surface of the deposition preventing member does not contact the inner peripheral surface of the growth crucible.