Imaging panel and method for manufacturing same
An imaging panel includes a photoelectric conversion element disposed on a substrate. The photoelectric conversion element includes a cathode electrode, a first semiconductor layer having a first conductive type, the first semiconductor layer being in contact with the cathode electrode, a second semiconductor layer having a second conductive type different from the first conductive type, the second semiconductor layer being joined to the first semiconductor layer, and an anode electrode in contact with the second semiconductor layer. The second semiconductor layer has a greater extinction coefficient as closer to the anode electrode.
1. An imaging panel comprising:
a substrate; and
a photoelectric conversion element disposed on the substrate,
wherein the photoelectric conversion element includes
a cathode electrode,
a first semiconductor layer having a first conductive type, the first semiconductor layer being in contact with the cathode electrode,
a second semiconductor layer having a second conductive type different from the first conductive type, the second semiconductor layer being joined to the first semiconductor layer, and
an anode electrode in contact with the second semiconductor layer, and
the second semiconductor layer has a greater extinction coefficient as closer to the anode electrode.
2. The imaging panel according to claim 1 ,
wherein the second semiconductor layer includes a plurality of layers having the extinction coefficients different from each other, and
among the plurality of layers, a layer closer to the anode electrode has a greater extinction coefficient.
3. The imaging panel according to claim 2 ,
wherein, among the plurality of layers, a difference between an extinction coefficient of a first layer located closest to the anode electrode and an extinction coefficient of a second layer located farthest from the anode electrode is 0.005 or greater.
4. The imaging panel according to claim 1 ,
wherein the photoelectric conversion element further includes an intrinsic semiconductor layer between the first semiconductor layer and the second semiconductor layer.
5. The imaging panel according to claim 1 ,
wherein the second semiconductor layer has a greater concentration of a dopant added to the second semiconductor layer as closer to the anode electrode.
6. A manufacturing method of an imaging panel comprising:
forming a cathode electrode on a substrate;
forming a first semiconductor layer having a first conductive type, the first semiconductor layer being in contact with the cathode electrode;
forming a second semiconductor layer having a second conductive type different from the first conductive type, the second semiconductor layer being joined to the first semiconductor layer; and
forming an anode electrode in contact with the second semiconductor layer,
wherein the second semiconductor layer has a greater extinction coefficient as closer to the anode electrode.
7. The manufacturing method according to claim 6 ,
wherein, in the forming a second semiconductor layer, the second semiconductor layer has a concentration of a dopant added to the second semiconductor layer such that the concentration is greater as closer to the anode electrode.